公开(公告)号：US09558823B1

公开(公告)日：2017-01-31

申请号：US14846393

申请日：2015-09-04

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Win-San Khwa ,  Tzu-Hsiang Su ,  Chao-I Wu ,  Hsiang-Pan Li ,  Meng-Fan Chang

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56

CPC classification number: G11C13/0069 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0021 ,  G11C13/0033 ,  G11C13/004 ,  G11C2013/0092

Abstract: A method is provided for operating a memory device including an array of memory cells including programmable resistive memory elements. Memory cells in the array are programmed to store data by applying program pulses to the memory cells to establish resistance levels within a number N of specified ranges of resistance, where each of the specified ranges corresponds to a particular data value. A drift recovery process is executed to the memory cells, including applying a recovery pulse having a pulse shape to a set of programmed memory cells, where memory cells in the set have resistance levels within two or more of the specified resistance ranges.

Abstract translation: 提供一种用于操作包括包括可编程电阻存储器元件的存储单元阵列的存储器件的方法。 阵列中的存储单元被编程为通过向存储器单元施加编程脉冲来存储数据，以建立指定范围电阻数量N内的电阻电平，其中每个指定范围对应于特定数据值。 对存储器单元执行漂移恢复处理，包括将具有脉冲形状的恢复脉冲施加到一组编程存储器单元，其中该组中的存储单元具有在指定电阻范围内的两个或更多个内的电阻电平。