公开(公告)号：US09455007B2

公开(公告)日：2016-09-27

申请号：US14556512

申请日：2014-12-01

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yu-Tsung Lin ,  Chien-Hung Liu ,  Jyun-Siang Huang

IPC: G11C8/00 ,  G11C8/08 ,  G11C8/10

CPC classification number: G11C8/08 ,  G11C8/10 ,  G11C8/14 ,  G11C16/0483 ,  G11C16/08

Abstract: A memory device includes a memory array having a plurality of rows and columns of array blocks disposed in array block areas, array blocks including sub-arrays of memory cells arranged in rows and columns with word lines disposed in a patterned gate layer along the rows and one or more patterned conductor layers including bit lines disposed along the columns. A plurality of sets of local word line drivers is arranged in rows and columns disposed adjacent to corresponding array blocks. A set of global word line drivers driving global word lines disposed in an overlying patterned conductor layer over the one or more patterned conductor layers in the array blocks.

Abstract translation: 存储器件包括存储器阵列，其具有布置在阵列块区域中的多个阵列阵列阵列，阵列块包括排列成行和列的存储器单元的子阵列，其中字线沿着行排列在图案化的栅极层中， 一个或多个图案化导体层，包括沿着列设置的位线。 多组本地字线驱动器被布置成与相应的阵列块相邻布置的行和列。 一组全局字线驱动器驱动排列在阵列块中的一个或多个图案化导体层上的覆盖图案化导体层中的全局字线。