公开(公告)号：US20160190334A1

公开(公告)日：2016-06-30

申请号：US14582929

申请日：2014-12-24

Applicant: MACRONIX International Co., Ltd.

Inventor： Hong-Ji Lee ,  Han-Hui Hsu

IPC: H01L29/788 ,  H01L21/28 ,  H01L21/3213 ,  H01L29/06 ,  H01L27/115 ,  H01L21/311

CPC classification number: H01L29/7883 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32139 ,  H01L27/11521 ,  H01L29/0649 ,  H01L29/40114

Abstract: Provided is a memory device including a substrate, a plurality of tunneling dielectric layers, a plurality of isolation structures, and a plurality of cap layers. The tunneling dielectric layers are located on the substrate. Each isolation structure has an upper portion and a lower portion. The lower portions of the isolation structures are located in the substrate and arranged alternately with the tunneling dielectric layers along a first direction. The upper portions of the isolation structures are located on the lower portions. The cap layers are located on the upper portions. A top surface of the cap layer is a planar surface.

Abstract translation: 提供了一种存储器件，其包括衬底，多个隧道电介质层，多个隔离结构和多个覆盖层。 隧穿电介质层位于衬底上。 每个隔离结构具有上部和下部。 隔离结构的下部位于衬底中，并沿隧道电介质层与第一方向交替布置。 隔离结构的上部位于下部。 盖层位于上部。 盖层的顶表面是平坦表面。