公开(公告)号：US12027584B2

公开(公告)日：2024-07-02

申请号：US17855300

申请日：2022-06-30

Applicant: MACRONIX International Co., Ltd.

Inventor： Jeng Hwa Liao ,  Zong-Jie Ko ,  Hsing-Ju Lin ,  Jung-Yu Shieh ,  Ling-Wuu Yang

IPC: H01L29/08 ,  H01L21/265 ,  H01L21/266 ,  H01L29/06 ,  H01L29/10 ,  H01L29/167 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/167 ,  H01L29/66598 ,  H01L29/7833 ,  H01L21/266

Abstract: A transistor structure including a substrate, a gate structure, first pocket doped regions, second pocket doped regions, and source/drain extension regions, and source/drain regions is provided. The gate structure is located on the substrate. The first pocket doped regions are located in the substrate aside the gate structure. A dopant of the first pocket doped region includes a group IVA element. The second pocket doped regions are located in the substrate aside the gate structure. A depth of the second pocket doped region is greater than a depth of the first pocket doped region. The source/drain extension regions are located in the first pocket doped regions. The source/drain regions are located in the substrate aside the gate structure. The source/drain extension region is located between the source/drain region and the gate structure.

公开(公告)号：US20230326969A1

公开(公告)日：2023-10-12

申请号：US17855300

申请日：2022-06-30

Applicant: MACRONIX International Co., Ltd.

Inventor： Jeng Hwa Liao ,  Zong-Jie Ko ,  Hsing-Ju Lin ,  Jung-Yu Shieh ,  Ling-Wuu Yang

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L21/265 ,  H01L29/167

CPC classification number: H01L29/0847 ,  H01L29/7833 ,  H01L29/66598 ,  H01L21/266 ,  H01L21/26586 ,  H01L29/167 ,  H01L21/26513

Abstract: A transistor structure including a substrate, a gate structure, first pocket doped regions, second pocket doped regions, and source/drain extension regions, and source/drain regions is provided. The gate structure is located on the substrate. The first pocket doped regions are located in the substrate aside the gate structure. A dopant of the first pocket doped region includes a group IVA element. The second pocket doped regions are located in the substrate aside the gate structure. A depth of the second pocket doped region is greater than a depth of the first pocket doped region. The source/drain extension regions are located in the first pocket doped regions. The source/drain regions are located in the substrate aside the gate structure. The source/drain extension region is located between the source/drain region and the gate structure.