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1.发明授权Ed in the emitter pressure sensitive transistor having a schottky barrier junction form 失效在具有肖特基阻挡结构形式的发射机压力敏感晶体管中的ED
公开(公告)号：US3757176A
公开(公告)日：1973-09-04
申请号：US3757176D
申请日：1971-09-29
Applicant: MATSUSHITA ELECTRONICS CORP
CPC classification number: H04R23/006 , H01L27/0766 , H01L29/00 , Y10S148/15
Abstract: A pressure sensitive semiconductor device which has a schottky barrier junction at an electrode lead-out portion of one region of a p-n-p or n-p-n structure transistor and to which a pressure sensitive junction is formed by providing a pressure applying means to the schottky barrier junction which has a high sensitivity since it amplifies a pressure response signal by the amplifying action of the transistor.
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