TRANSDUCER STRUCTURE AND METHOD FOR MEMS DEVICES
    1.
    发明申请
    TRANSDUCER STRUCTURE AND METHOD FOR MEMS DEVICES 审中-公开
    MEMS器件的传感器结构和方法

    公开(公告)号:US20150241479A1

    公开(公告)日:2015-08-27

    申请号:US13922539

    申请日:2013-06-20

    Applicant: MCube Inc.

    Abstract: An improved MEMS transducer apparatus and method is provided. The apparatus has a movable base structure including an outer surface region and at least one portion removed to form at least one inner surface region. At least one intermediate anchor structure is disposed within the inner surface region. The apparatus includes an intermediate spring structure operably coupled to the central anchor structure, and at least one portion of the inner surface region. A capacitor element is disposed within the inner surface region.

    Abstract translation: 提供了一种改进的MEMS换能器装置和方法。 该装置具有可移动的基座结构,其包括外表面区域和至少一个部分被去除以形成至少一个内表面区域。 至少一个中间锚结构设置在内表面区域内。 该装置包括可操作地联接到中心锚固结构的中间弹簧结构以及内表面区域的至少一部分。 电容器元件设置在内表面区域内。

    METHOD AND STRUCTURE FOR ADDING MASS WITH STRESS ISOLATION TO MEMS STRUCTURES
    2.
    发明申请
    METHOD AND STRUCTURE FOR ADDING MASS WITH STRESS ISOLATION TO MEMS STRUCTURES 有权
    用于通过应力分离加入MEMS结构的方法和结构

    公开(公告)号:US20140199799A1

    公开(公告)日:2014-07-17

    申请号:US14217376

    申请日:2014-03-17

    Applicant: mCube Inc.

    Abstract: A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.

    Abstract translation: 一种将应力隔离加入MEMS的方法和结构。 该结构具有耦合到至少一个柔性元件的硅材料的厚度。 根据具体实施例,硅材料的厚度可被配置为围绕柔性元件在一个或多个空间方向上移动。 该设备还包括形成在硅材料厚度的相应空间区域中的多个凹陷区域。 此外,该设备包括在每个凹陷区域内的胶合材料和形成在每个凹进区域上的塞子材料。

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