公开(公告)号：US20030047130A1

公开(公告)日：2003-03-13

申请号：US10230609

申请日：2002-08-29

申请人： MEMC Electronic Materials, Inc.

发明人： Hariprasad Sreedharamurthy ,  Vijay Nithianathan

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B030/04 ,  C30B028/10

CPC分类号： C30B29/06 ,  C30B15/22

摘要： A process for eliminating dislocations in a neck of a large-diameter single crystal silicon ingot is provided. The process comprises controlling heat transfer at the melt/solid interface to eliminate dislocations over a reduced axial length in the neck portion of a large-diameter single crystal silicon ingot grown in accordance with the Czochralski method, thereby increasing overall process throughput and yield.

摘要翻译： 提供一种消除大直径单晶硅锭颈部脱位的方法。 该方法包括控制在熔体/固体界面处的热传递，以消除根据切克劳斯基法生长的大直径单晶硅锭的颈部中减小的轴向长度上的位错，从而提高整体工艺生产量和产率。

公开(公告)号：US20030079673A1

公开(公告)日：2003-05-01

申请号：US10281632

申请日：2002-10-28

申请人： MEMC Electronic Materials, Inc.

发明人： Hariprasad Sreedharamurthy ,  Mohsen Banan

IPC分类号： C30B015/20 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B29/06 ,  C30B15/36 ,  Y10S117/902

摘要： The present invention provides for a process for preparing a single crystal silicon ingot by the Czochralski method. The process comprises selecting a seed crystal for Czochralski growth wherein the seed crystal comprises vacancy dominated single crystal silicon.

摘要翻译： 本发明提供了通过Czochralski法制备单晶硅锭的方法。 该方法包括选择用于切克萨斯生长的晶种，其中晶种包括空位主导的单晶硅。

公开(公告)号：US20040055531A1

公开(公告)日：2004-03-25

申请号：US10252027

申请日：2002-09-20

申请人： MEMC Electronic Materials, Inc.

发明人： Lee W. Ferry ,  Richard G. Schrenker ,  Hariprasad Sreedharamurthy

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten source material. In one aspect, the heat shield assembly includes a multi-sectioned outer shield and a multi-sectioned inner shield. The sections of at least one of the inner and outer shields may be releasably connected to one another so that, in the event a section is damaged, the sections may be separated to allow replacement with an undamaged section. In another aspect the heat shield assembly includes an upper section and a lower section extending generally downward from the upper section toward the molten material. The lower section has a height equal to at least about 33% of a height of the heat shield assembly.