公开(公告)号：US20190088495A1

公开(公告)日：2019-03-21

申请号：US16044479

申请日：2018-07-24

申请人： MICROLINK DEVICES, INC.

发明人： Christopher Youtsey ,  Robert McCarthy ,  Rekha Reddy

IPC分类号： H01L21/306 ,  H01L21/67 ,  H01L29/20 ,  H01L21/02

CPC分类号： H01L21/30612 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02664 ,  H01L21/30635 ,  H01L21/67075 ,  H01L21/67086 ,  H01L21/78 ,  H01L21/7813 ,  H01L29/2003 ,  H01L31/02363 ,  H01L33/0075 ,  H01L33/22

摘要： Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.

公开(公告)号：US20190088494A1

公开(公告)日：2019-03-21

申请号：US16044448

申请日：2018-07-24

申请人： MICROLINK DEVICES, INC.

发明人： Christopher Youtsey ,  Robert McCarthy

IPC分类号： H01L21/306 ,  H01L21/67 ,  H01L21/02

摘要： Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.

公开(公告)号：US10685843B2

公开(公告)日：2020-06-16

申请号：US16044448

申请日：2018-07-24

申请人： MICROLINK DEVICES, INC.

发明人： Christopher Youtsey ,  Robert McCarthy

IPC分类号： H01L21/306 ,  H01L21/3063 ,  H01L31/0236 ,  H01L33/00 ,  H01L21/78 ,  H01L21/02 ,  H01L21/67 ,  H01L29/20 ,  H01L33/22

摘要： Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.

公开(公告)号：US10522363B2

公开(公告)日：2019-12-31

申请号：US16044479

申请日：2018-07-24

申请人： MICROLINK DEVICES, INC.

发明人： Christopher Youtsey ,  Robert McCarthy ,  Rekha Reddy

IPC分类号： H01L21/306 ,  H01L21/78 ,  H01L21/3063 ,  H01L33/00 ,  H01L21/02 ,  H01L31/0236 ,  H01L21/67 ,  H01L29/20 ,  H01L33/22

摘要： Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.