公开(公告)号：US20220293208A1

公开(公告)日：2022-09-15

申请号：US17198755

申请日：2021-03-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Kishore Kumar MUCHHERLA ,  Mustafa N. KAYNAK ,  Sivagnanam PARTHASARATHY ,  Xiangang LUO ,  Peter FEELEY ,  Devin M. BATUTIS ,  Jiangang WU ,  Sampath K RATNAM ,  Shane NOWELL ,  Karl D. Schuh

IPC: G11C29/50 ,  G06F12/02 ,  G11C7/10 ,  G11C29/02 ,  G11C16/26

Abstract: A voltage calibration scan is initiated. A first value of a data state metric measured for a sample block of a memory device based on associated with a first bin of blocks designated as a current is received. The first value is designated as a minimum value. A second value of the data state metric for the sample block is measured based on a set of read voltage offsets associated with a second bin of blocks having an index value higher than the current bin. In response to determining that the second value exceeds the first value, the first bin is maintained as the current bin and the voltage calibration scan is stopped.