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公开(公告)号：US20220383955A1
公开(公告)日：2022-12-01
申请号：US17883538
申请日：2022-08-08
Applicant: Micron Technology, Inc.
Inventor： Kishore Kumar MUCHHERLA , Sampath K. RATNAM , Shane NOWELL , Sivagnanam PARTHASARATHY , Mustafa N. KAYNAK , Karl D. SCHUH , Peter FEELEY , Jiangang WU
Abstract: A processing device of a memory sub-system is configured to detect a power on event that is associated with a memory device and indicates that power has been restored to the memory device; estimate a duration of a power off state preceding the power on event associated with the memory device; and update voltage bin assignments of a plurality of blocks associated with the memory device based on the duration of the power off state.
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公开(公告)号：US20240168847A1
公开(公告)日：2024-05-23
申请号：US18507805
申请日：2023-11-13
Applicant: Micron Technology, Inc.
Inventor： Mustafa N. KAYNAK , Eyal EN GAD , Zhengang CHEN , Sivagnanam PARTHASARATHY , Phong Sy NGUYEN , Dung V. NGUYEN
CPC classification number: G06F11/1068 , G06F11/076 , G06F11/1016
Abstract: A method includes performing a read operation of a first codeword including first hard data and generating an error vector using a reliability metric of the first hard data. The first hard data and error vector are stored in first and second portions of memory. A first corrected codeword is returned that combines the error vector and the hard data from the first and second portions of memory. A read operation of a second codeword is performed, including second hard data and soft information. The hard data and soft information are stored in the first and second portions of memory. A bit of second hard data is flipped responsive to comparing a reliability metric of the bit of the second hard data to a bit flipping threshold, wherein flipping the bit includes updating the second hard data. The updated second codeword is returned resulting from reading the portions of memory.
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公开(公告)号：US20230044471A1
公开(公告)日：2023-02-09
申请号：US17397707
申请日：2021-08-09
Applicant: Micron Technology, Inc.
Inventor： Mustafa N. KAYNAK , Sivagnanam PARTHASARATHY
IPC: H03M13/11 , H03M13/09 , H03K19/17728
Abstract: Methods, systems, and apparatuses include receiving a codeword stored in a memory device. Energy function values are determined for bits of the codeword based on soft information for the bits of the codeword. A bit of the codeword is flipped when the energy function values for a bit of the codeword satisfies a bit flipping criterion. A corrected codeword that results from the flipping of the bits is returned.
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公开(公告)号：US20220321148A1
公开(公告)日：2022-10-06
申请号：US17223910
申请日：2021-04-06
Applicant: Micron Technology, Inc.
Inventor： Mustafa N. KAYNAK , Sivagnanam PARTHASARATHY
Abstract: Methods, systems, and apparatuses include receiving a codeword stored in a memory device. The codeword is error corrected for a first number of iterations. The error correction includes traversing the codeword according to a first order. The codeword is error corrected for a second number of the iterations. The error correction of the codeword during a second iteration from the second number of iterations includes traversing the codeword according to a second order that is different from the first order.
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公开(公告)号：US20230315570A1
公开(公告)日：2023-10-05
申请号：US18329886
申请日：2023-06-06
Applicant: Micron Technology, Inc.
Inventor： Mustafa N. KAYNAK , Patrick R. KHAYAT , Sivagnanam PARTHASARATHY
IPC: G06F11/10
CPC classification number: G06F11/1076
Abstract: Methods, systems, and apparatus for error correction with syndrome computation in a memory device are described. A first syndrome for first encoded data is generated in a memory device. The first syndrome and the first encoded data are transmitted to a controller that is coupled with the memory device. A second syndrome for first and second encoded data is generated. The first encoded data and the second encoded data are interrelated according to an error correction code. The second syndrome is transmitted to the controller without the second encoded data and the controller is to decode the first encoded data based on at least one of the first syndrome, the second syndrome, or a combination thereof.
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Patent Agency Ranking
公开(公告)号：US20220350700A1
公开(公告)日：2022-11-03
申请号：US17246509
申请日：2021-04-30
Applicant: Micron Technology, Inc.
Inventor： Mustafa N. KAYNAK , Patrick R. KHAYAT , Sivagnanam PARTHASARATHY
IPC: G06F11/10
Abstract: Methods, systems, and apparatus for error correction with syndrome computation in a memory device are described. A first syndrome for first encoded data is generated in a memory device. The first syndrome and the first encoded data are transmitted to a controller that is coupled with the memory device. A second syndrome for first and second encoded data is generated. The first encoded data and the second encoded data are interrelated according to an error correction code. The second syndrome is transmitted to the controller without the second encoded data and the controller is to decode the first encoded data based on at least one of the first syndrome, the second syndrome, or a combination thereof.
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公开(公告)号：US20220321144A1
公开(公告)日：2022-10-06
申请号：US17223804
申请日：2021-04-06
Applicant: Micron Technology, Inc.
Inventor： Mustafa N. KAYNAK , Sivagnanam PARTHASARATHY
Abstract: Methods, systems, and apparatuses for stall mitigation in iterative decoders are described. A codeword is received from a memory device. The codeword is iteratively error corrected based on a first bit flipping criterion. A stall condition in the multiple error correction iterations is detected. In response to the detection, the codeword is error corrected based on a second bit flipping criterion that is different from the first bit flipping criterion.
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公开(公告)号：US20220416815A1
公开(公告)日：2022-12-29
申请号：US17899495
申请日：2022-08-30
Applicant: Micron Technology, Inc.
Inventor： Mustafa N. KAYNAK , Sivagnanam PARTHASARATHY
Abstract: Methods, systems, and apparatuses include receiving a codeword stored in a memory device. The codeword is error corrected for a first number of iterations. The error correction includes traversing the codeword according to a first order. The codeword is error corrected for a second number of the iterations. The error correction of the codeword during a second iteration from the second number of iterations includes traversing the codeword according to a second order that is different from the first order.
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公开(公告)号：US20220293208A1
公开(公告)日：2022-09-15
申请号：US17198755
申请日：2021-03-11
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Kishore Kumar MUCHHERLA , Mustafa N. KAYNAK , Sivagnanam PARTHASARATHY , Xiangang LUO , Peter FEELEY , Devin M. BATUTIS , Jiangang WU , Sampath K RATNAM , Shane NOWELL , Karl D. Schuh
Abstract: A voltage calibration scan is initiated. A first value of a data state metric measured for a sample block of a memory device based on associated with a first bin of blocks designated as a current is received. The first value is designated as a minimum value. A second value of the data state metric for the sample block is measured based on a set of read voltage offsets associated with a second bin of blocks having an index value higher than the current bin. In response to determining that the second value exceeds the first value, the first bin is maintained as the current bin and the voltage calibration scan is stopped.
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公开(公告)号：US20190278655A1
公开(公告)日：2019-09-12
申请号：US15914402
申请日：2018-03-07
Applicant: Micron Technology, Inc.
Inventor： Larry J. KOUDELE , Mustafa N. KAYNAK , Michael SHEPEREK , Patrick R. KHAYAT , Sampath K. RATNAM
Abstract: A first data stored at a first portion of a memory cell and a second data stored at a second portion of the memory cell are identified. A first error rate associated with first data stored at the first portion of the memory cell is determined. The first error rate is adjusted to exceed a second error rate associated with the second data stored at the second portion of the memory cell. A determination is made as to whether the first error rate exceeds a threshold. The second data stored at the second portion of the memory cell is provided for use in an error correction operation in response to determining that the first error rate exceeds the threshold.
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