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公开(公告)号：US10861555B2
公开(公告)日：2020-12-08
申请号：US16433212
申请日：2019-06-06
Applicant: MICRON TECHNOLOGY, INC.
Abstract: Methods include programming a first portion of memory cells of a string of series-connected memory cells closer to a particular end of the string than a second portion of memory cells of the string in an order from a different end of the string to the particular end, and programming the second portion of memory cells in an order from the particular end to the different end. Methods further include incrementing a first read count and a second read count in response to performing a read operation on a memory cell of a block of memory cells, resetting the first read count in response to performing an erase operation on a first portion of memory cells of the block of memory cells, and resetting the second read count in response to performing an erase operation on the second portion of memory cells of the block of memory cells.
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公开(公告)号：US20210090670A1
公开(公告)日：2021-03-25
申请号：US17247266
申请日：2020-12-07
Applicant: MICRON TECHNOLOGY, INC.
Abstract: Memory might have a controller configured to program a first portion of memory cells of a string of series-connected memory cells closer to a particular end of the string than a second portion of memory cells of the string in an order from a different end of the string to the particular end, and program the second portion of memory cells in an order from the particular end to the different end. Memory might further have a controller configured to increment first and second read counts in response to performing a read operation on a memory cell of a block of memory cells, reset the first read count in response to performing an erase operation on a first portion of the block of memory cells, and reset the second read count in response to performing an erase operation on the second portion of the block of memory cells.
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Patent Agency Ranking
3.发明申请公开(公告)号：US20190287619A1
公开(公告)日：2019-09-19
申请号：US16433193
申请日：2019-06-06
Applicant: Micron Technology, Inc.
Abstract: Methods include incrementing a first read count in response to performing a read operation on a memory cell of a block of memory cells, the first read count corresponding to a first portion of memory cells of the block of memory cells; incrementing a second read count in response to performing the read operation on the memory cell of the block of memory cells, the second read count corresponding to a second portion of memory cells of the block of memory cells; resetting the first read count in response to performing an erase operation on the first portion of memory cells of the block of memory cells; and resetting the second read count in response to performing an erase operation on the second portion of memory cells of the block of memory cells.
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公开(公告)号：US10418106B2
公开(公告)日：2019-09-17
申请号：US15569854
申请日：2017-08-28
Applicant: MICRON TECHNOLOGY, INC.
Abstract: Methods include programming a first portion of memory cells of a string of series-connected memory cells closer to a particular end of the string than a second portion of memory cells of the string in an order from a different end of the string to the particular end, and programming the second portion of memory cells in an order from the particular end to the different end. Methods further include incrementing a first read count and a second read count in response to performing a read operation on a memory cell of a block of memory cells, resetting the first read count in response to performing an erase operation on a first portion of memory cells of the block of memory cells, and resetting the second read count in response to performing an erase operation on the second portion of memory cells of the block of memory cells.
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公开(公告)号：US11328782B2
公开(公告)日：2022-05-10
申请号：US17247266
申请日：2020-12-07
Applicant: MICRON TECHNOLOGY, INC.
Abstract: Memory might have a controller configured to program a first portion of memory cells of a string of series-connected memory cells closer to a particular end of the string than a second portion of memory cells of the string in an order from a different end of the string to the particular end, and program the second portion of memory cells in an order from the particular end to the different end. Memory might further have a controller configured to increment first and second read counts in response to performing a read operation on a memory cell of a block of memory cells, reset the first read count in response to performing an erase operation on a first portion of the block of memory cells, and reset the second read count in response to performing an erase operation on the second portion of the block of memory cells.
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6.发明申请公开(公告)号：US20190287620A1
公开(公告)日：2019-09-19
申请号：US16433212
申请日：2019-06-06
Applicant: MICRON TECHNOLOGY, INC.
Abstract: Methods include programming a first portion of memory cells of a string of series-connected memory cells closer to a particular end of the string than a second portion of memory cells of the string in an order from a different end of the string to the particular end, and programming the second portion of memory cells in an order from the particular end to the different end. Methods further include incrementing a first read count and a second read count in response to performing a read operation on a memory cell of a block of memory cells, resetting the first read count in response to performing an erase operation on a first portion of memory cells of the block of memory cells, and resetting the second read count in response to performing an erase operation on the second portion of memory cells of the block of memory cells.
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公开(公告)号：US20190066787A1
公开(公告)日：2019-02-28
申请号：US15569854
申请日：2017-08-28
Applicant: MICRON TECHNOLOGY, INC.
CPC classification number: G11C16/10 , G11C16/0483 , G11C16/14 , G11C16/26 , G11C16/3427 , G11C16/349
Abstract: Methods include programming a first portion of memory cells of a string of series-connected memory cells closer to a particular end of the string than a second portion of memory cells of the string in an order from a different end of the string to the particular end, and programming the second portion of memory cells in an order from the particular end to the different end. Methods further include incrementing a first read count and a second read count in response to performing a read operation on a memory cell of a block of memory cells, resetting the first read count in response to performing an erase operation on a first portion of memory cells of the block of memory cells, and resetting the second read count in response to performing an erase operation on the second portion of memory cells of the block of memory cells.
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