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公开(公告)号:US11704024B2
公开(公告)日:2023-07-18
申请号:US16947291
申请日:2020-07-27
Applicant: Micron Technology, Inc.
Inventor: Ying Yu Tai , Ning Chen , Jiangli Zhu
CPC classification number: G06F3/0616 , G06F3/065 , G06F3/0659 , G06F3/0679 , G06F12/10 , G06F2212/1036 , G06F2212/202 , G06F2212/657
Abstract: A memory sub-system performs a first media management operation among a plurality of individual data units of a memory device after a first interval, the first media management operation comprising a first algebraic mapping function, and performs a second media management operation among a first plurality of groups of data units of the memory device after a second interval, wherein a first group of the first plurality of groups comprises the plurality of individual data units, the second media management operation comprising a second algebraic mapping function.
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公开(公告)号:US20230019910A1
公开(公告)日:2023-01-19
申请号:US17954023
申请日:2022-09-27
Applicant: Micron Technology, Inc.
Inventor: Fangfang Zhu , Ying Yu Tai , Ning Chen , Jiangli Zhu , Alex Tang
IPC: G06F3/06
Abstract: Embodiments include methods, systems, devices, instructions, and media for limiting hot-cold swap wear leveling in memory devices. In one embodiment, wear metric values are stored and monitored using multiple wear leveling criteria. The multiple wear leveling criteria include a hot-cold swap wear leveling criteria, which may make use of a write count offset value. Based on a first wear metric value of a first management group and a second wear metric value of a second management group, the first management group and the second management group are selected for a wear leveling swap operation. The wear leveling swap operation is performed with a whole management group read operation of the first management group to read a set of data, and a whole management group write operation to write the set of data to the second management group.
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公开(公告)号:US11481119B2
公开(公告)日:2022-10-25
申请号:US16874389
申请日:2020-05-14
Applicant: Micron Technology, Inc.
Inventor: Fangfang Zhu , Ying Yu Tai , Ning Chen , Jiangli Zhu , Alex Tang
Abstract: Embodiments include methods, systems, devices, instructions, and media for limiting hot-cold swap wear leveling in memory devices. In one embodiment, wear metric values are stored and monitored using multiple wear leveling criteria. The multiple wear leveling criteria include a hot-cold swap wear leveling criteria, which may make use of a write count offset value. Based on a first wear metric value of a first management group and a second wear metric value of a second management group, the first management group and the second management group are selected for a wear leveling swap operation. The wear leveling swap operation is performed with a whole management group read operation of the first management group to read a set of data, and a whole management group write operation to write the set of data to the second management group.
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公开(公告)号:US11080132B2
公开(公告)日:2021-08-03
申请号:US16510559
申请日:2019-07-12
Applicant: Micron Technology, Inc.
Abstract: A request to store a first data is received. The first data and a first error-checking data are received. The first error-checking data can be based on a cyclic redundancy check (CRC) operation of the first data. A second data is generated by removing a portion of the first data. A second error-checking data of the second data is generated by using the first error-checking data and the removed portion of the first data.
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公开(公告)号:US20210011799A1
公开(公告)日:2021-01-14
申请号:US16510559
申请日:2019-07-12
Applicant: Micron Technology, Inc.
Abstract: A request to store a first data is received. The first data and a first error-checking data are received. The first error-checking data can be based on a cyclic redundancy check (CRC) operation of the first data. A second data is generated by removing a portion of the first data. A second error-checking data of the second data is generated by using the first error-checking data and the removed portion of the first data.
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公开(公告)号:US20200110544A1
公开(公告)日:2020-04-09
申请号:US16153016
申请日:2018-10-05
Applicant: Micron Technology, Inc.
Inventor: Fangfang Zhu , Jiangli Zhu , Ning Chen , Ying Yu Tai
Abstract: Data is copied, from a second group of data blocks in a second plurality of groups of data blocks that are mapped, to a first group of data blocks in a first set of groups of data blocks that are not mapped to include the first group of data blocks in the second set of groups of data blocks that are mapped. A sub-total write counter associated with the first group of data blocks is reset. A value of the sub-total write counter indicates a number of write operations performed on the first group of data blocks since the first group of data blocks has been included in the second set of groups of data blocks. A wear leveling operation is performed on the first group of data blocks based on the sub-total write counter.
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公开(公告)号:US20240143231A1
公开(公告)日:2024-05-02
申请号:US18404999
申请日:2024-01-05
Applicant: Micron Technology, Inc.
Inventor: Ning Chen , Jiangli Zhu , Yi-Min Lin , Fangfang Zhu
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0604 , G06F3/0679
Abstract: A write request directed to the non-volatile memory device is received. A stripe associated with an address specified by the write request is present in the volatile memory device is determined. The volatile memory device includes a plurality of stripes, each stripe of the plurality of stripes having a plurality of managed units. The write request on a managed unit of the stripe in the volatile memory device is performed. The stripe in the volatile memory device is evicted to a stripe in the non-volatile memory device.
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公开(公告)号:US11874769B2
公开(公告)日:2024-01-16
申请号:US17698424
申请日:2022-03-18
Applicant: Micron Technology, Inc.
Inventor: Ning Chen , Jiangli Zhu , Ying Yu Tai
CPC classification number: G06F12/0246 , G06F3/061 , G06F3/064 , G06F3/065 , G06F3/0679 , G06F12/0292 , G06F2212/1036 , G06F2212/7201 , G06F2212/7211
Abstract: A processing device in a memory sub-system maintains a mapping data structure to track data movements from a plurality of data management units associated with a media management operation on a memory device. The processing device further uses a first indicator and a second indicator of a plurality of indicators to indicate which data of data management units of a source group of data management units have been copied to a destination group of data management units during the media management operation. Data located in data management units preceding the first indicator have been copied to data management units of the destination group of data management units. Data located in data management units associated with the first indicator and the second indicator or between the first indicator and the second indicator are either copied to data management units of the destination group of data management units or remain located in data management units of the source group of data management units. Data located in data management units subsequent to the second indicator remain located in data management units of the source group of data management units and have not been copied to the destination group of data management units.
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公开(公告)号:US11645147B2
公开(公告)日:2023-05-09
申请号:US17324845
申请日:2021-05-19
Applicant: Micron Technology, Inc.
CPC classification number: G06F11/1004 , G06F3/0619 , G06F3/0653 , G06F3/0673 , G06F11/1096
Abstract: First data is received. First error-checking data generated based on a cyclic redundancy check (CRC) operation of the first data is received. Second data is generated by combining the first data with a first data pattern. Second error-checking data of the second data is generated by using a combination of the first error-checking data and a second data pattern. The second data pattern has a size that is based on the first data pattern.
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公开(公告)号:US11636008B2
公开(公告)日:2023-04-25
申请号:US17464449
申请日:2021-09-01
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Seungjune Jeon , Juane Li , Ning Chen
Abstract: A request to program host data to a memory device of a memory sub-system is received. Redundancy metadata associated with the host data is generated. A determination is made, in view of the received request, whether the host data is valid data or invalid data. In response to a determination that the host data is invalid data, updated redundancy metadata associated with the host data is generated. The updated redundancy metadata indicates that the host data is invalid data. The host data and the updated redundancy metadata is programmed to the memory device.
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