公开(公告)号：US20150214160A1

公开(公告)日：2015-07-30

申请号：US14679845

申请日：2015-04-06

Applicant: Micron Technology, Inc.

Inventor： Mark A. Bossler ,  Jaspreet S. Gandhi ,  Christopher J. Gambee ,  Randall S. Parker

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L23/48

CPC classification number: H01L23/53238 ,  H01L21/02068 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.

Abstract translation: 一种用于从衬底选择性地去除材料的方法，而不损害填充通孔的铜，并且至少部分地延伸通过衬底。 该方法包括氧化包括基底和至少一个铜特征的半导体结构，并且使用包含SF 6的蚀刻剂去除一部分基底，而不在至少一个铜特征上形成硫化铜。 还公开了另外的方法，以及由这些方法制备的半导体结构。

公开(公告)号：US09318438B2

公开(公告)日：2016-04-19

申请号：US14679845

申请日：2015-04-06

Applicant: Micron Technology, Inc.

Inventor： Mark A. Bossler ,  Jaspreet S. Gandhi ,  Christopher J. Gambee ,  Randall S. Parker

IPC: H01L23/532 ,  H01L23/538 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L21/02

CPC classification number: H01L23/53238 ,  H01L21/02068 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for selectively removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.

Abstract translation: 一种用于从衬底选择性地去除材料的方法，而不损坏铜填充通孔并且至少部分地延伸通过衬底。 该方法包括氧化包括基底和至少一个铜特征的半导体结构，并且使用包含SF 6的蚀刻剂去除一部分基底，而不在至少一个铜特征上形成硫化铜。 还公开了另外的方法，以及由这些方法制备的半导体结构。

公开(公告)号：US09034769B2

公开(公告)日：2015-05-19

申请号：US13712699

申请日：2012-12-12

Applicant: Micron Technology, Inc.

Inventor： Mark A. Bossler ,  Jaspreet S. Gandhi ,  Christopher J. Gambee ,  Randall S. Parker

IPC: H01L21/302 ,  H01L21/461 ,  H01L23/538 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01L23/53238 ,  H01L21/02068 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.

Abstract translation: 一种用于从衬底选择性地去除材料的方法，而不损害填充通孔的铜，并且至少部分地延伸通过衬底。 该方法包括氧化包括基底和至少一个铜特征的半导体结构，并且使用包含SF 6的蚀刻剂去除一部分基底，而不在至少一个铜特征上形成硫化铜。 还公开了另外的方法，以及由这些方法制备的半导体结构。

公开(公告)号：US20140159239A1

公开(公告)日：2014-06-12

申请号：US13712699

申请日：2012-12-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Mark A. Bossler ,  Jaspreet S. Gandhi ,  Christopher J. Gambee ,  Randall S. Parker

IPC: H01L23/538 ,  H01L21/306

CPC classification number: H01L23/53238 ,  H01L21/02068 ,  H01L21/02238 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/5384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.

Abstract translation: 一种用于从衬底选择性地去除材料的方法，而不损害填充通孔的铜，并且至少部分地延伸通过衬底。 该方法包括氧化包括基底和至少一个铜特征的半导体结构，并且使用包含SF 6的蚀刻剂去除一部分基底，而不在至少一个铜特征上形成硫化铜。 还公开了另外的方法，以及由这些方法制备的半导体结构。