READ VERIFICATION CADENCE AND TIMING IN MEMORY DEVICES

    公开(公告)号:US20240062840A1

    公开(公告)日:2024-02-22

    申请号:US17889214

    申请日:2022-08-16

    CPC classification number: G11C16/3459 G11C11/5628 G11C11/5671 G11C16/10

    Abstract: A processing device in a memory sub-system performs a first pass of a multi-pass programming operation to coarsely program a first wordline, performs a second pass to coarsely program a second wordline adjacent to the first wordline, performs a third pass of a multi-pass programming operation to finely program the first wordline, performs a fourth pass of a multi-pass programming operation to coarsely program a third wordline adjacent to the second wordline, performs a fifth pass of a multi-pass programming operation to finely program the second wordline, and responsive to determining that at least the second wordline has been finely programmed, performs a read verify operation on one or more cells associated with the first wordline.

    WRITE ATOMICITY MANAGEMENT FOR MEMORY SUBSYSTEMS

    公开(公告)号:US20200133833A1

    公开(公告)日:2020-04-30

    申请号:US16171261

    申请日:2018-10-25

    Abstract: Exemplary methods, apparatuses, and systems include receiving an instruction to atomically write data to a memory component. A plurality of write commands for the first data are generated, including an end of atom indicator. The first plurality of write commands are sent to the memory component while accumulating a plurality of translation table updates corresponding to the write commands One or more translation tables are updated with the plurality of translation table updates in response to determining that the final write command has been successfully sent to the memory component.

    Write atomicity management for memory subsystems

    公开(公告)号:US10761978B2

    公开(公告)日:2020-09-01

    申请号:US16171261

    申请日:2018-10-25

    Abstract: Exemplary methods, apparatuses, and systems include receiving an instruction to atomically write data to a memory component. A plurality of write commands for the first data are generated, including an end of atom indicator. The first plurality of write commands are sent to the memory component while accumulating a plurality of translation table updates corresponding to the write commands One or more translation tables are updated with the plurality of translation table updates in response to determining that the final write command has been successfully sent to the memory component.

Patent Agency Ranking