公开(公告)号：US20230215487A1

公开(公告)日：2023-07-06

申请号：US17647151

申请日：2022-01-05

Applicant: Micron Technology, Inc.

Inventor： Ruyan Xue ,  Weilu Chu ,  Zhiqi Huang

IPC: G11C11/407 ,  H03K17/687 ,  G11C11/22 ,  H03F3/45 ,  G06F3/06

CPC classification number: G11C11/407 ,  H03K17/6872 ,  H03K17/6874 ,  G11C11/225 ,  H03F3/45273 ,  H03F3/45269 ,  G06F3/0655 ,  G06F3/0604 ,  G06F3/0679 ,  G11C11/221

Abstract: Methods, systems, and devices for configurable input for an amplifier are described. In some examples, a circuit may be configured to operate based on a signal having a first voltage profile or a second voltage profile. For example, the first voltage profile may be associated with a range of voltages that are based on a temperature of an associated memory chip, and the second voltage profile may be associated with a voltage (or voltages) that are not associated with the temperature of the memory chip. The circuit may include one or more transistors and switches that are activated based on the voltage profile and a switch receiving a particular control signal. In some instances, the control signal may be received based on a value stored to one or more non-volatile memory elements.

公开(公告)号：US12068017B2

公开(公告)日：2024-08-20

申请号：US17647151

申请日：2022-01-05

Applicant: Micron Technology, Inc.

Inventor： Ruyan Xue ,  Weilu Chu ,  Zhiqi Huang

IPC: G11C16/04 ,  G06F3/06 ,  G11C11/22 ,  G11C11/407 ,  H03F3/45 ,  H03K17/687

CPC classification number: G11C11/407 ,  G06F3/0604 ,  G06F3/0655 ,  G06F3/0679 ,  G11C11/225 ,  H03F3/45269 ,  H03F3/45273 ,  H03K17/6872 ,  H03K17/6874 ,  G11C11/221

Abstract: Methods, systems, and devices for configurable input for an amplifier are described. In some examples, a circuit may be configured to operate based on a signal having a first voltage profile or a second voltage profile. For example, the first voltage profile may be associated with a range of voltages that are based on a temperature of an associated memory chip, and the second voltage profile may be associated with a voltage (or voltages) that are not associated with the temperature of the memory chip. The circuit may include one or more transistors and switches that are activated based on the voltage profile and a switch receiving a particular control signal. In some instances, the control signal may be received based on a value stored to one or more non-volatile memory elements.

公开(公告)号：US20220352882A1

公开(公告)日：2022-11-03

申请号：US17813291

申请日：2022-07-18

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Zhiqi Huang ,  Weilu Chu ,  Dong Pan

IPC: H03K5/134 ,  G11C11/4076 ,  G11C11/4093

Abstract: Methods and apparatuses are provided for temperature independent resistive-capacitive delay circuits of a semiconductor device. For example, delays associated with ZQ calibration or timing of the RAS chain may be implemented that to include circuitry that exhibits both proportional to absolute temperature (PTAT) characteristics and complementary to absolute temperature (CTAT) characteristics in order to control delay times across a range of operating temperatures. The RC delay circuits may include a first type of circuitry having impedance with PTAT characteristics that is coupled to an output node in parallel with a second type of circuitry having impedance with CTAT characteristics. The first type of circuitry may include a resistor and the second type of circuitry may include a transistor, in some embodiments.

公开(公告)号：US11929749B2

公开(公告)日：2024-03-12

申请号：US17813291

申请日：2022-07-18

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Zhiqi Huang ,  Weilu Chu ,  Dong Pan

IPC: H03K5/134 ,  G11C11/4076 ,  G11C11/4093

CPC classification number: H03K5/134 ,  G11C11/4076 ,  G11C11/4093

Abstract: Methods and apparatuses are provided for temperature independent resistive-capacitive delay circuits of a semiconductor device. For example, delays associated with ZQ calibration or timing of the RAS chain may be implemented that to include circuitry that exhibits both proportional to absolute temperature (PTAT) characteristics and complementary to absolute temperature (CTAT) characteristics in order to control delay times across a range of operating temperatures. The RC delay circuits may include a first type of circuitry having impedance with PTAT characteristics that is coupled to an output node in parallel with a second type of circuitry having impedance with CTAT characteristics. The first type of circuitry may include a resistor and the second type of circuitry may include a transistor, in some embodiments.

公开(公告)号：US20210336612A1

公开(公告)日：2021-10-28

申请号：US16472773

申请日：2018-10-17

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Zhiqi Huang ,  Weilu Chu ,  Dong Pan

IPC: H03K5/134 ,  G11C11/4076 ,  G11C11/4093

Abstract: Methods and apparatuses are provided for temperature independent resistive-capacitive delay circuits of a semiconductor device. For example, delays associated with ZQ calibration or timing of the RAS chain may be implemented that to include circuitry that exhibits both proportional to absolute temperature (PTAT) characteristics and complementary to absolute temperature (CTAT) characteristics in order to control delay times across a range of operating temperatures. The RC delay circuits may include a first type of circuitry having impedance with PTAT characteristics that is coupled to an output node in parallel with a second type of circuitry having impedance with CTAT characteristics. The first type of circuitry may include a resistor and the second type of circuitry may include a transistor, in some embodiments.