公开(公告)号：US08589826B2

公开(公告)日：2013-11-19

申请号：US13750963

申请日：2013-01-25

Applicant: Micron Technology, Inc.

Inventor： William Stanton ,  Fei Wang

IPC: G06F17/50

CPC classification number: G03F1/00 ,  G03F1/58

Abstract: Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.

公开(公告)号：US20130137017A1

公开(公告)日：2013-05-30

申请号：US13750963

申请日：2013-01-25

Applicant: MICRON TECHNOLOGY, INC.

Inventor： William Stanton ,  Fei Wang

IPC: G03F1/00

CPC classification number: G03F1/00 ,  G03F1/58

Abstract: Some embodiments include methods in which a mathematical representation of a photomask construction is defined, with such representation comprising a plurality of pillars that individually contain a plurality of distinct layers. Each of the layers has two or more characteristic parameters which are optimized through an optimization loop. Subsequently, specifications obtained from the optimization loop are utilized to form actual layers over an actual reticle base. Some embodiments include photomask constructions in which a radiation-patterning topography is across a reticle base, with such topography including multiple pillars that individually contain at least seven distinct layers.

Abstract translation: 一些实施例包括定义光掩模结构的数学表示的方法，其中这种表示包括单独包含多个不同层的多个柱。 每个层都有两个或更多个通过优化循环优化的特征参数。 随后，利用从优化环获得的规格在实际的掩模版基础上形成实际的层。 一些实施例包括光掩模结构，其中辐射图案化形貌横跨掩模版基底，其中这种形貌包括单独包含至少七个不同层的多个柱。