公开(公告)号：US11107685B2

公开(公告)日：2021-08-31

申请号：US16474639

申请日：2018-02-01

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Keisuke Nakamura ,  Muneyoshi Suita ,  Akifumi Imai ,  Kenichiro Kurahashi ,  Tomohiro Shinagawa ,  Takashi Matsuda ,  Koji Yoshitsugu ,  Eiji Yagyu ,  Kunihiko Nishimura

IPC分类号： H01L23/00 ,  H01L21/70 ,  H01L21/18 ,  H01L21/76 ,  H01L21/02 ,  H01L21/447

摘要： The semiconductor manufacturing device includes: a lower substrate support base configured to support a diamond substrate; an upper substrate support base configured to support a semiconductor substrate; a support base drive unit configured to move the lower substrate support base and the upper substrate support base to bring the diamond substrate and the semiconductor substrate into close contact with each other under a state in which a pressure is applied to the diamond substrate and the semiconductor substrate in a thickness direction; and a second mechanism configured to deform a surface of the upper substrate support base opposed to the lower substrate support base so that a surface of the semiconductor substrate opposed to the diamond substrate forms a parallel surface or a parallel plane with respect to a surface of the diamond substrate opposed to the semiconductor substrate.

公开(公告)号：US08987125B2

公开(公告)日：2015-03-24

申请号：US13910607

申请日：2013-06-05

申请人： Mitsubishi Electric Corporation

发明人： Hiroyuki Okazaki ,  Takuma Nanjo ,  Yosuke Suzuki ,  Akifumi Imai ,  Muneyoshi Suita ,  Eiji Yagyu

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L21/285 ,  H01L29/423 ,  H01L29/20

CPC分类号： H01L29/66477 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： The present invention relates to a method for manufacturing a heterojunction semiconductor device including an AlGaN layer, the method including the steps of (a) forming a dummy electrode in a region where a gate electrode is arranged on the AlGaN layer, (b) depositing a dielectric film on the AlGaN layer by exposing side surfaces of the dummy electrode, using a device having anisotropy, (c) forming an opening in the dielectric film by removing the dummy electrode, and (d) forming the gate electrode that extends from inside the opening onto the dielectric film in a vicinity of the opening.

摘要翻译： 本发明涉及一种用于制造包括AlGaN层的异质结半导体器件的方法，所述方法包括以下步骤：（a）在AlGaN层上布置栅电极的区域中形成虚设电极，（b） 通过使用具有各向异性的器件暴露所述虚拟电极的侧面，在所述AlGaN层上形成电介质膜，（c）通过去除所述虚拟电极形成所述电介质膜的开口，以及（d）形成所述栅电极， 在开口附近打开电介质膜。

公开(公告)号：US20140011349A1

公开(公告)日：2014-01-09

申请号：US13910607

申请日：2013-06-05

申请人： Mitsubishi Electric Corporation

发明人： Hiroyuki OKAZAKI ,  Takuma Nanjo ,  Yosuke Suzuki ,  Akifumi Imai ,  Muneyoshi Suita ,  Eiji Yagyu

IPC分类号： H01L29/66

CPC分类号： H01L29/66477 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： The present invention relates to a method for manufacturing a heterojunction semiconductor device including an AlGaN layer, the method including the steps of (a) forming a dummy electrode in a region where a gate electrode is arranged on the AlGaN layer, (b) depositing a dielectric film on the AlGaN layer by exposing side surfaces of the dummy electrode, using a device having anisotropy, (c) forming an opening in the dielectric film by removing the dummy electrode, and (d) forming the gate electrode that extends from inside the opening onto the dielectric film in a vicinity of the opening.

摘要翻译： 本发明涉及一种用于制造包括AlGaN层的异质结半导体器件的方法，所述方法包括以下步骤：（a）在AlGaN层上布置栅电极的区域中形成虚设电极，（b） 通过使用具有各向异性的器件暴露所述虚拟电极的侧面，在所述AlGaN层上形成电介质膜，（c）通过去除所述虚拟电极形成所述电介质膜的开口，以及（d）形成所述栅电极， 在开口附近打开电介质膜。

公开(公告)号：US09893210B2

公开(公告)日：2018-02-13

申请号：US15173740

申请日：2016-06-06

申请人： Mitsubishi Electric Corporation

发明人： Kenichiro Kurahashi ,  Takuma Nanjo ,  Muneyoshi Suita ,  Akifumi Imai ,  Eiji Yagyu ,  Hiroyuki Okazaki

IPC分类号： H01L29/04 ,  H01L29/812 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/80 ,  H01L23/29 ,  H01L29/51 ,  H01L29/778 ,  H01L29/423

CPC分类号： H01L29/812 ,  H01L23/291 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/408 ,  H01L29/42376 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/802

摘要： A semiconductor device includes: a substrate; a nitride semiconductor layer on the substrate; a source electrode, a drain electrode and a gate electrode on the nitride semiconductor layer; and a SiN surface protective film covering the nitride semiconductor layer, wherein a composition ratio Si/N of Si and N that form a Si—N bond of the SiN surface protective film is 0.751 to 0.801.

公开(公告)号：US20150228756A1

公开(公告)日：2015-08-13

申请号：US14611757

申请日：2015-02-02

申请人： Mitsubishi Electric Corporation

发明人： Kenichiro KURAHASHI ,  Takuma Nanjo ,  Muneyoshi Suita ,  Yosuke Suzuki ,  Akifumi Imai ,  Marika Nakamura ,  Eiji Yagyu

IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L21/324 ,  H01L29/205 ,  H01L29/47 ,  H01L21/283 ,  H01L29/778 ,  H01L29/201

CPC分类号： H01L29/66462 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/7786

摘要： A semiconductor device includes an Alx1Ga1-x1N (0≦x1≦1) barrier layer, and a gate electrode that is disposed on a surface of the Alx1Ga1-x1N (0≦x1≦1) barrier layer, forms a Schottky junction with the surface of the Alx1Ga1-x1N (0≦x1≦1) barrier layer, and has an Ni single-layer structure. Annealing processing is performed with respect to the gate electrode at a temperature of 500° C. or above under a nitrogen atmosphere to form a reaction layer between the surface of the Alx1Ga1-x1N (0≦x1≦1) barrier layer and the gate electrode.

摘要翻译： 半导体器件包括Alx1Ga1-x1N（0＆nlE; x1＆nlE; 1）势垒层，并且设置在Alx1Ga1-x1N（0＆nlE; x1＆nlE; 1）势垒层的表面上的栅电极与表面形成肖特基结 的Alx1Ga1-x1N（0＆nlE; x1＆nlE; 1）阻挡层，并具有Ni单层结构。 在氮气气氛下，在500℃以上的温度下，对栅电极进行退火处理，在Alx1Ga1-x1N（0＆n1E; x1＆n1E1）阻挡层的表面与栅电极之间形成反应层 。