公开(公告)号：US10468368B2

公开(公告)日：2019-11-05

申请号：US16029760

申请日：2018-07-09

申请人： Mitsubishi Electric Corporation

发明人： Sho Kumada

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L23/29 ,  H01L21/56 ,  B23K101/40 ,  B23K20/16

摘要： Provided is a technique of improving joint strength between a joining layer and a resin. A power semiconductor device includes a wiring member, a semiconductor element, a joining layer joining the wiring member and the semiconductor element to each other, and a resin covering the wiring member, the semiconductor element, and the joining layer. The joining layer includes a first joining layer provided to be adjacent to the resin and having a void filled with the resin. A filler contained in the resin has a maximum width greater than a minimum diameter of the void in the first joining layer.

公开(公告)号：US11094664B2

公开(公告)日：2021-08-17

申请号：US16746042

申请日：2020-01-17

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Hiroaki Tatsumi ,  Sho Kumada ,  Osamu Suzuki ,  Daisuke Kawabata

IPC分类号： H01L21/50 ,  H01L23/00 ,  H01L23/488 ,  H01L23/373 ,  H01L23/12 ,  H01L23/498 ,  H01L25/07 ,  H01L29/16 ,  H01L29/20 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

摘要： A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

公开(公告)号：US10573617B2

公开(公告)日：2020-02-25

申请号：US15740873

申请日：2016-06-28

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Hiroaki Tatsumi ,  Sho Kumada ,  Osamu Suzuki ,  Daisuke Kawabata

IPC分类号： H01L21/50 ,  H01L23/00 ,  H01L23/488 ,  H01L23/373 ,  H01L23/12 ,  H01L23/498 ,  H01L25/07 ,  H01L29/16 ,  H01L29/20 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

摘要： A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.