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公开(公告)号：US20190111467A1
公开(公告)日：2019-04-18
申请号：US16080163
申请日：2017-05-29
发明人： Keisuke Tanaka , Daisuke Oya , Mikio Ishihara , Tatsuya Iwasa , Koji Saito , Yuki Wakabayashi
摘要： In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.
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公开(公告)号：US11484936B2
公开(公告)日：2022-11-01
申请号：US17132708
申请日：2020-12-23
发明人： Keisuke Tanaka , Daisuke Oya , Mikio Ishihara , Tatsuya Iwasa , Koji Saito , Yuki Wakabayashi
IPC分类号： B22C3/00 , B22D19/00 , B22D27/18 , B22D27/20 , H01L23/12 , H01L23/36 , H05K1/02 , H01L23/14 , H01L23/373
摘要： In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.
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公开(公告)号：US10898946B2
公开(公告)日：2021-01-26
申请号：US16080163
申请日：2017-05-29
发明人： Keisuke Tanaka , Daisuke Oya , Mikio Ishihara , Tatsuya Iwasa , Koji Saito , Yuki Wakabayashi
IPC分类号： B22C3/00 , B22D19/00 , H05K1/02 , B22D27/20 , H01L23/12 , B22D27/18 , H01L23/36 , H01L23/14 , H01L23/373
摘要： In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.
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公开(公告)号：US20210121943A1
公开(公告)日：2021-04-29
申请号：US17132708
申请日：2020-12-23
发明人： Keisuke Tanaka , Daisuke Oya , Mikio Ishihara , Tatsuya Iwasa , Koji Saito , Yuki Wakabayashi
IPC分类号： B22C3/00 , B22D19/00 , B22D27/20 , H01L23/12 , B22D27/18 , H01L23/36 , H05K1/02 , H01L23/14 , H01L23/373
摘要： In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.
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公开(公告)号：US20200001510A1
公开(公告)日：2020-01-02
申请号：US16094946
申请日：2017-05-23
发明人： Yuki Wakabayashi , Yoshinori Kaneto
摘要： In the injection compression molding mold, cooling water passages are provided between a fixed-side surface formation portion and a heater, cooling water passages are provided between a movable-side surface formation portion and a heater, and a cavity is formed by the fixed-side surface formation portion, the movable-side surface formation portion, and a looped member. When the fixed-side surface formation portion and the movable-side surface formation portion are heated to predetermined temperature, resin is injected and filled into the cavity. Next, inside of the cavity is pressurized, and then heating is stopped and cooling water is supplied to the cooling water passages to perform cooling. Then, before the resin is completely solidified, the resin in the cavity is compressed while being cooled and solidified.
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