公开(公告)号：US20150380373A1

公开(公告)日：2015-12-31

申请号：US14446788

申请日：2014-07-30

Applicant: MK Electron Co., Ltd.

Inventor： Jeong Tak MOON ,  Jae Yeol SON ,  Santosh KUMAR ,  Eung Jae KIM ,  Hui Joong KIM ,  Ho Gun CHA

IPC: H01L23/00 ,  H01B1/02

CPC classification number: H01L24/17 ,  H01B1/026 ,  H01L24/05 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13012 ,  H01L2224/13016 ,  H01L2224/13111 ,  H01L2224/13647 ,  H01L2224/16113 ,  H01L2224/16157 ,  H01L2224/16225 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/207 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/00014

Abstract: A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.

Abstract translation: 提供了一种焊球和使用其的半导体器件。 在其中在芯球上依次形成第一镀层和第二镀层的Sn基焊料球中，第二镀层包括Sn-Ag-Cu合金，Ag 3 Sn金属间化合物（IMC）纳米颗粒或Ag- Sn化合物纳米粒子存在于第二镀层中。 焊球具有高球形度，隔离特性和连接可靠性，从而可以实现具有高集成度的半导体器件。