公开(公告)号：US20160315040A1

公开(公告)日：2016-10-27

申请号：US15134848

申请日：2016-04-21

Applicant: MK Electron Co., Ltd.

Inventor： Jae Yeol SON ,  Jeong Tak MOON ,  Jae Hun SONG ,  Young Woo LEE ,  Eung Jae KIM ,  Su-Yong RYU ,  Hui Joong KIM ,  Ho Gun CHA ,  Ik Joo MAENG ,  Chan Goo YOO

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L24/11 ,  H01L21/4853 ,  H01L23/49811 ,  H01L24/13 ,  H01L2224/11318 ,  H01L2224/11849 ,  H01L2224/13014 ,  H01L2224/13026 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13669 ,  H01L2224/48227 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/351

Abstract: Provided are a reverse-reflow core, a semiconductor package, and a method of fabricating a semiconductor package. The semiconductor package includes: a semiconductor apparatus including a bump pad; and a bump portion bonded to the bump pad. The bump portion includes: a core; an intermetallic compound layer formed on the core; and a solder layer coating the intermetallic compound layer, wherein the thickness of a portion of the solder layer decreases as the distance between the portion of the solder layer and the bump pad increases. The reverse-reflow core, the semiconductor package, and the method of fabricating a semiconductor package enable the fabrication of a semiconductor package having high bonding strength and a high degree of precision.

Abstract translation: 提供了反向回流芯，半导体封装和制造半导体封装的方法。 半导体封装包括：包括凸块焊盘的半导体装置; 以及接合到所述凸块焊盘的凸块部分。 凸起部分包括：芯; 形成在所述芯上的金属间化合物层; 以及涂覆金属间化合物层的焊料层，其中焊料层的一部分的厚度随着焊料层的部分和凸块焊盘之间的距离增加而减小。 反向回流芯，半导体封装以及制造半导体封装的方法能够制造具有高结合强度和高精度的半导体封装。

公开(公告)号：US20150380373A1

公开(公告)日：2015-12-31

申请号：US14446788

申请日：2014-07-30

Applicant: MK Electron Co., Ltd.

Inventor： Jeong Tak MOON ,  Jae Yeol SON ,  Santosh KUMAR ,  Eung Jae KIM ,  Hui Joong KIM ,  Ho Gun CHA

IPC: H01L23/00 ,  H01B1/02

CPC classification number: H01L24/17 ,  H01B1/026 ,  H01L24/05 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13012 ,  H01L2224/13016 ,  H01L2224/13111 ,  H01L2224/13647 ,  H01L2224/16113 ,  H01L2224/16157 ,  H01L2224/16225 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/207 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/00014

Abstract: A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.

Abstract translation: 提供了一种焊球和使用其的半导体器件。 在其中在芯球上依次形成第一镀层和第二镀层的Sn基焊料球中，第二镀层包括Sn-Ag-Cu合金，Ag 3 Sn金属间化合物（IMC）纳米颗粒或Ag- Sn化合物纳米粒子存在于第二镀层中。 焊球具有高球形度，隔离特性和连接可靠性，从而可以实现具有高集成度的半导体器件。

公开(公告)号：US20160256962A1

公开(公告)日：2016-09-08

申请号：US15044585

申请日：2016-02-16

Applicant: MK Electron Co., Ltd.

Inventor： Hui Joong KIM ,  Jae Hun SONG ,  Young Woo LEE ,  Jae Hong LEE ,  Jae Yeol SON ,  Eung Jae KIM ,  Ho Gun CHA

IPC: B23K35/26 ,  C22C13/02 ,  B23K35/362 ,  H01L23/00 ,  B23K35/02

CPC classification number: B23K35/262 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/362 ,  C22C13/02 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/13014 ,  H01L2224/13111 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81911 ,  H01L2924/00015 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01003 ,  H01L2924/00012

Abstract: A solder ball includes about 1.0 wt % to about 2.0 wt % silver (Ag), about 4.0 wt % to about 8.0 wt % indium (In), about 10.0 wt % to about 20.0 wt % bismuth (Bi), about 0.005 wt % to about 0.1 wt % deoxidizer, and the balance of tin (Sn). A melting point of the solder is about 170° C. to about 190° C.

Abstract translation: 焊球包括约1.0重量％至约2.0重量％的银（Ag），约4.0重量％至约8.0重量％的铟（In），约10.0重量％至约20.0重量％的铋（Bi），约0.005重量％ 至约0.1重量％的脱氧剂，余量为锡（Sn）。 焊料的熔点为约170℃至约190℃