公开(公告)号：US20180195196A1

公开(公告)日：2018-07-12

申请号：US15400635

申请日：2017-01-06

Applicant: MKS Instruments, Inc.

Inventor： Chiu-Ying Tai ,  Atul Gupta ,  Kevin Wenzel ,  Glenn Stanton

IPC: C25D11/12 ,  C25D11/02 ,  H01J37/32

CPC classification number: C25D11/12 ,  C23C16/4404 ,  C25D11/026 ,  C25D11/06 ,  C25D11/08 ,  C25D11/18 ,  C25D11/26 ,  C25D11/30 ,  C25D11/34 ,  H01J37/32486 ,  H01J37/32495

Abstract: A method is introduced for creating a protective oxide layer over a surface of a metallic structure for use in a semiconductor processing system. The method includes providing the metallic structure, anodizing the surface of the metallic structure to form an anodization layer on the surface, and converting, using a plasma electrolytic oxidation process, at least a portion of the anodization layer to form the protective oxide layer.