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公开(公告)号：US20240312772A1
公开(公告)日：2024-09-19
申请号：US18122509
申请日：2023-03-16
Applicant: MKS Instruments, Inc.
Inventor： Chiu-Ying Tai , Michael Harris , Ilya Pokidov , Joseph Desjardins , Gordon Hill
IPC: H01J37/32
CPC classification number: H01J37/32935 , H01J37/32357 , H01J2237/24564
Abstract: An in-situ current sensing apparatus for a plasma processing system has one or more sections defining a plasma channel, the plasma processing system configured to form a plasma in the plasma channel using a process gas. The in-situ current sensing apparatus includes an assembly including an electrically conductive housing coupled to a dielectric coating layer, wherein a surface of the dielectric coating layer is configured to physically contact at least one of the process gas or the plasma in the plasma channel. The in-situ current sensing apparatus also includes a current probe, inductively or electrically connected to the assembly, for sensing a capacitively-coupled current within the assembly caused by the formation of plasma in the plasma channel. The in-situ current-sensing apparatus further includes at least one dielectric break for electrically isolating the assembly from the one or more sections. The assembly may include an electrode embedded within the housing.
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公开(公告)号：US20240284584A1
公开(公告)日：2024-08-22
申请号：US18112712
申请日：2023-02-22
Applicant: MKS Instruments, Inc.
Inventor： Ilya Pokidov , Chiu-Ying Tai , Joseph Desjardins , Gordon Hill , Michael Harris
CPC classification number: H05H1/52 , H05H1/4652 , H05H2242/10
Abstract: A plasma apparatus of a plasma processing system is provided. The plasma apparatus defines a toroidal plasma channel and includes multiple end blocks defining respective portions of the toroidal plasma channel. Each end block includes an end-block tube constructed from a first electrically conductive material and a dielectric coating disposed on an interior surface of the end-block tube. The plasma apparatus also includes multiple mid-blocks defining respective portions of the toroidal plasma channel. Each mid-block includes at least one heat sink located adjacent to a substantially linear tube with a thermal interface disposed therebetween. The thermal interface is in physical communication with the tube and the at least one heat sink. The mid-block tube has a substantially uniform wall thickness and is constructed from a dielectric material. The at least one heat sink is constructed from a second electrically conductive material.
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公开(公告)号：US11114287B2
公开(公告)日：2021-09-07
申请号：US16438827
申请日：2019-06-12
Applicant: MKS Instruments, Inc.
Inventor： Michael Harris , Chiu-Ying Tai , Atul Gupta
Abstract: The present application discloses a device for radical monitoring a plasma source for a remote plasma source used in a processing system and includes at least one gas source, a plasma source body having at least one passage having at least one passage surface, a first thermal sensor receiver may be formed within the plasma source body proximate to the passage surface of the passage, a first thermal sensor positioned within the first thermal sensor receiver configured to measure a first temperature of the passage surface, a second thermal sensor receiver formed within the plasma source body proximate to the passage surface of the passage and configured to measure a second temperature of the passage surface of the passage at a second location.
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Patent Agency Ranking
公开(公告)号：US20220214321A1
公开(公告)日：2022-07-07
申请号：US17583712
申请日：2022-01-25
Applicant: MKS Instruments, Inc.
Inventor： Johannes Chiu , Xing Chen , Chiu-Ying Tai , Michael Harris , Atul Aupta
IPC: G01N33/00 , G01K17/06 , G01N27/12 , G01N21/3504
Abstract: The present application is directed to a method of measuring the concentration of radicals in a gas stream which includes the steps of flowing a radical gas stream emitted from at least one radical gas generator to at least one processing chamber, providing at least one sampling reaction module having at least one sampling tube therein, establishing a reference temperature of the sampling tube with at least one thermal control module, diverting a portion of the radical gas steam from the radical gas generator into the sampling tube, reacting at least one reagent with at least one radical gas within a defined volume of the radical gas stream thereby forming at least one chemical species within at least one compound stream, the compound stream flowing within the sampling tube, measuring a change of temperature of the sampling tube due to interaction of the chemical species within the compound stream and the sampling tube with sensor module, and calculating a concentration of the chemical species within the compound stream flowing within the sampling tube based on the measured temperature change of the sampling tube.
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公开(公告)号：US20180195196A1
公开(公告)日：2018-07-12
申请号：US15400635
申请日：2017-01-06
Applicant: MKS Instruments, Inc.
Inventor： Chiu-Ying Tai , Atul Gupta , Kevin Wenzel , Glenn Stanton
CPC classification number: C25D11/12 , C23C16/4404 , C25D11/026 , C25D11/06 , C25D11/08 , C25D11/18 , C25D11/26 , C25D11/30 , C25D11/34 , H01J37/32486 , H01J37/32495
Abstract: A method is introduced for creating a protective oxide layer over a surface of a metallic structure for use in a semiconductor processing system. The method includes providing the metallic structure, anodizing the surface of the metallic structure to form an anodization layer on the surface, and converting, using a plasma electrolytic oxidation process, at least a portion of the anodization layer to form the protective oxide layer.
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公开(公告)号：US12207385B2
公开(公告)日：2025-01-21
申请号：US18112712
申请日：2023-02-22
Applicant: MKS Instruments, Inc.
Inventor： Ilya Pokidov , Chiu-Ying Tai , Joseph Desjardins , Gordon Hill , Michael Harris
Abstract: A plasma apparatus of a plasma processing system is provided. The plasma apparatus defines a toroidal plasma channel and includes multiple end blocks defining respective portions of the toroidal plasma channel. Each end block includes an end-block tube constructed from a first electrically conductive material and a dielectric coating disposed on an interior surface of the end-block tube. The plasma apparatus also includes multiple mid-blocks defining respective portions of the toroidal plasma channel. Each mid-block includes at least one heat sink located adjacent to a substantially linear tube with a thermal interface disposed therebetween. The thermal interface is in physical communication with the tube and the at least one heat sink. The mid-block tube has a substantially uniform wall thickness and is constructed from a dielectric material. The at least one heat sink is constructed from a second electrically conductive material.
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公开(公告)号：US11733224B2
公开(公告)日：2023-08-22
申请号：US17583712
申请日：2022-01-25
Applicant: MKS Instruments, Inc.
Inventor： Johannes Chiu , Xing Chen , Chiu-Ying Tai , Michael Harris , Atul Aupta
IPC: G01N33/00 , G01K17/06 , G01N27/12 , G01N21/3504
CPC classification number: G01N33/0031 , G01K17/06 , G01N21/3504 , G01N27/122 , G01N33/0016
Abstract: The present application is directed to a method of measuring the concentration of radicals in a gas stream which includes the steps of flowing a radical gas stream emitted from at least one radical gas generator to at least one processing chamber, providing at least one sampling reaction module having at least one sampling tube therein, establishing a reference temperature of the sampling tube with at least one thermal control module, diverting a portion of the radical gas steam from the radical gas generator into the sampling tube, reacting at least one reagent with at least one radical gas within a defined volume of the radical gas stream thereby forming at least one chemical species within at least one compound stream, the compound stream flowing within the sampling tube, measuring a change of temperature of the sampling tube due to interaction of the chemical species within the compound stream and the sampling tube with sensor module, and calculating a concentration of the chemical species within the compound stream flowing within the sampling tube based on the measured temperature change of the sampling tube.
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公开(公告)号：US20190385829A1
公开(公告)日：2019-12-19
申请号：US16438827
申请日：2019-06-12
Applicant: MKS Instruments, Inc.
Inventor： Michael Harris , Chiu-Ying Tai , Atul Gupta
IPC: H01J37/32
Abstract: The present application discloses a device for radical monitoring a plasma source for a remote plasma source used in a processing system and includes at least one gas source, a plasma source body having at least one passage having at least one passage surface, a first thermal sensor receiver may be formed within the plasma source body proximate to the passage surface of the passage, a first thermal sensor positioned within the first thermal sensor receiver configured to measure a first temperature of the passage surface, a second thermal sensor receiver formed within the plasma source body proximate to the passage surface of the passage and configured to measure a second temperature of the passage surface of the passage at a second location.
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