公开(公告)号：US20030027409A1

公开(公告)日：2003-02-06

申请号：US09919967

申请日：2001-08-02

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Edgar H. Callaway JR. ,  Alexander Demkov ,  Lyndee Hilt

IPC: H01L021/20

CPC classification number: H01L21/0245 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: High quality epitaxial layers of germanium can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline germanium layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract translation: 通过首先在硅晶片上生长容纳缓冲层，可以生长覆盖大型硅晶片的锗的高质量外延层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆单晶锗层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。