公开(公告)号：US20030020072A1

公开(公告)日：2003-01-30

申请号：US09911518

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Robert J. Higgins

IPC: H01L029/22

CPC classification number: H01L27/16 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L23/38 ,  H01L2924/0002 ,  Y02P70/605 ,  H01L2924/00

Abstract: A thermal management system or method may include features for pumping heat in a composite semiconductor structure. A heat pump such as a peltier device may be formed from compound semiconductor materials in a composite semiconductor structure. The heat pump may be thermally connected to an area of thermal interest such as a circuit device that generates heat during operation. The heat pump may also be connected to a non-compound semiconductor region of the composite semiconductor structure, which may be die bonded to a heat sink. Electricity may be conducted through the heat pump to move heat in a desired direction between the area of thermal interest and the non-compound semiconductor region. Plural heat pumps may be formed for cooling or heating an area of thermal interest in the composite semiconductor structure. If desired, control circuitry and a temperature sensor may be formed and used to regulate the temperature in the area of the thermal interest.

Abstract translation: 热管理系统或方法可以包括用于在复合半导体结构中泵送热的特征。 诸如珀耳帖器件的热泵可以由复合半导体结构中的化合物半导体材料形成。 热泵可以热连接到热感兴趣的区域，例如在运行期间产生热量的电路装置。 热泵还可以连接到复合半导体结构的非化合物半导体区域，该非化合物半导体区域可以被模具结合到散热器。 可以通过热泵进行电流以在热感兴趣区域和非化合物半导体区域之间的期望方向上移动热量。 可以形成多个热泵以冷却或加热复合半导体结构中的热感兴趣区域。 如果需要，可以形成控制电路和温度传感器并用于调节热感兴趣区域中的温度。

公开(公告)号：US20030022412A1

公开(公告)日：2003-01-30

申请号：US09911496

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Robert J. Higgins ,  Kenneth D. Cornett

IPC: H01L021/00

CPC classification number: H03H9/0542 ,  H01L27/20 ,  H01L41/314 ,  H01L41/319 ,  H03H9/02976

Abstract: An epitaxial layer of crystalline piezoelectric material such as lithium niobate and lithium tantalate can be grown overlying a silicon wafer by first growing an intermediate strain-relief layer on the silicon wafer. Early in the growth of the piezoelectric layer, the strain-relief layer is a crystalline metal oxide, which helps bridge the lattice mismatch between silicon and the piezoelectric material. After growth of a thin crystalline piezoelectric layer, the strain-relief layer is amorphized to decouple the silicon and piezoelectric crystal lattices. Growth of the piezoelectric layer may then be resumed to obtain a good quality thicker layer suitable for electro-acoustic device fabrication. Passive and active electro-acoustic devices may be fabricated using the epitaxial piezoelectric layer. In particular, acoustic charge transport devices that utilize device elements in both silicon and the piezoelectric epitaxial overlayer are designed and fabricated. The electro-acoustic devices may be integrated with semiconductor device circuitry fabricated on the silicon wafer.

Abstract translation: 通过首先在硅晶片上生长中间应变消除层，可以将晶体压电材料的外延层如铌酸锂和钽酸锂生长在硅晶片上。 在压电层的生长早期，应变消除层是结晶金属氧化物，有助于桥接硅与压电材料之间的晶格失配。 在薄晶体压电层生长之后，应变消除层非晶化以使硅和压电晶格分离。 然后可以恢复压电层的生长以获得适合于电声器件制造的优质较厚层。 可以使用外延压电层制造被动和主动的电声装置。 特别地，设计并制造了利用硅中的器件元件和压电外延覆层的声电荷传输器件。 电声器件可以与制造在硅晶片上的半导体器件电路集成。