公开(公告)号：US20030022408A1

公开(公告)日：2003-01-30

申请号：US09911495

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Barbara F. Barenburg ,  Timothy Brophy

IPC: H01L021/00

CPC classification number: H01L27/0688 ,  G02B6/12004 ,  G02B6/12009 ,  G02B6/122 ,  G02B6/132 ,  G02B6/43 ,  G02B2006/12061 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. An arrayed wavelength grating device is formed overlying the silicon wafer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 在硅晶片上形成阵列波长光栅器件。

公开(公告)号：US20030034551A1

公开(公告)日：2003-02-20

申请号：US09929022

申请日：2001-08-15

Applicant: MOTOROLA, INC.

Inventor： Barbara Foley Barenburg ,  Timothy Brophy

IPC: H01L023/58

CPC classification number: H01L27/0605 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicone oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Electro-optical devices, optical devices, and electrical devices employable within a node for a mesh network are formed overlying the silicon wafer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧烷氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 在硅晶片上形成电光装置，光学装置和可用于网状网络的节点内的电气装置。

公开(公告)号：US20030016913A1

公开(公告)日：2003-01-23

申请号：US09908885

申请日：2001-07-20

Applicant: MOTOROLA, INC.

Inventor： Timothy Brophy ,  Barbara F. Barenburg

IPC: G02B006/26 ,  G02B006/10

CPC classification number: G02B6/12004 ,  G02B6/12007 ,  G02B6/1221 ,  G02B6/136 ,  G02B2006/12078 ,  H01L31/1035

Abstract: Optical signal delay apparatus and method may delay the progress of an optical signal through a semiconductor structure for a predetermined period of time. An optical delay device comprising a directional coupler and an optical signal loop may be used to delay optical signals. If desired, at least part of a directional coupler in an optical delay device may be formed from electro-optical materials so that the optical signals may be selectively transferred from the directional coupler to an optical Signal loop. Selective transfer may be provided through the application of a voltage. Optical signals with differing wavelengths may be differentiated by using a plurality of optical delay devices that each delay an optical signal having a different wavelength.

Abstract translation: 光信号延迟装置和方法可以延迟通过半导体结构的光信号的进行预定时间段。 可以使用包括定向耦合器和光信号环路的光延迟器件来延迟光信号。 如果需要，光延迟装置中的定向耦合器的至少一部分可以由电光材料形成，使得光信号可以从定向耦合器选择性地传送到光信号环路。 可以通过施加电压来提供选择性转移。 可以通过使用各自延迟具有不同波长的光信号的多个光学延迟装置来区分具有不同波长的光信号。