Abstract:
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The fabrication of on chip high frequency communications devices such as direct conversion and sampling circuits with direct interface to high speed compound semiconductor material in integrated circuits for high speed data acquisition and antenna interface is disclosed for direct coupling of RF signals in single chip applications.
Abstract:
A composite semiconductor structure includes islands of noncompound semiconductor materials formed on a noncompound substrate, and an optical testing structure. In one embodiment, a scan chain runs through the noncompound substrate (and possibly also through the islands) and terminates in the islands at optical interface elements, one of which is an optical emitter and the other of which is an optical detector. A test device inputs test signals to, and reads test signals from, the scan chain by interfacing optically with the optical interface elements. In another embodiment, an optical detector is formed in the silicon substrate and an optical emitter is formed in the compound semiconductor material. A leaky waveguide communicating with the emitter overlies the detector, and detection by the detector of light emitted by the emitter is an indication of the absence of an intended circuit element between the detector and the leaky side of the waveguide.
Abstract:
A generator (304) generates first and second training signals (320, 318) that originate within a wireless communication device (FIG. 3) instead of being received from a source outside the device. A receive portion (212, 214, 216) of the device processes the first training signal to derive a processed training signal. An adaptive equalizer (310) equalizes the processed training signal to derive an equalized training signal. A processor (312) compares the equalized training signal and the second training signal using an adaptive algorithm to derive coefficients for the adaptive equalizer to compensate for variations in the receive portion, and adjusts the adaptive equalizer in accordance with the coefficients to derive a compensated output signal.
Abstract:
A processor (216) time-shares correlators (206) to process (402) pilot channels for a plurality of branches to derive pilot symbols for each of the plurality of branches before processing control and data channels. The processor and the correlators cooperate to determine (404) from the pilot symbols a timing estimate for each of the plurality of branches. A signal quality estimator (210) determines (406) from the pilot symbols a signal quality for each of the plurality of branches. Subsequently, the processor cooperates with the correlators to process (408) the control and data channels of the plurality of branches, in an order determined by a plurality of branch attributes including at least one of the signal quality and the timing estimate determined for each of the plurality of branches.