公开(公告)号：US20130294173A1

公开(公告)日：2013-11-07

申请号：US13936620

申请日：2013-07-08

Applicant: Macronix International Co., Ltd.

Inventor： Chuan-Ying Yu ,  Ken-Hui Chen ,  Chun-Hsiung Hung ,  Kuen-Long Chang

IPC: G11C16/16

CPC classification number: G11C16/16 ,  G11C16/345 ,  G11C16/3454

Abstract: Various aspects of a nonvolatile memory have an improved erase suspend procedure. A bias arrangement is applied to word lines of an erase sector undergoing an erase procedure interrupted by an erase suspend procedure. As a result, another operation performed during erase suspend, such as a read operation or program operation, has more accurate results due to decreased leakage current from any over-erased nonvolatile memory cells of the erase sector.

Abstract translation: 非易失性存储器的各个方面具有改进的擦除暂停过程。 偏移布置被施加到经历由擦除暂停过程中断的擦除过程的擦除扇区的字线。 结果，由于擦除扇区的任何被擦除的非易失性存储单元的漏电流减少，因此在诸如读操作或程序操作的擦除暂停期间执行的另一操作具有更精确的结果。