METHOD AND APPARATUS OF MEASURING ERROR CORRECTION DATA FOR MEMORY
    1.
    发明申请
    METHOD AND APPARATUS OF MEASURING ERROR CORRECTION DATA FOR MEMORY 有权
    用于记忆的测量误差校正数据的方法和装置

    公开(公告)号:US20140082440A1

    公开(公告)日:2014-03-20

    申请号:US13866834

    申请日:2013-04-19

    Abstract: Multiple measurements are made with one memory sense operation having a first word line sensing voltage on a memory cell. The multiple measurements include a first measurement, of whether the memory cell stores either: (a) data corresponding to a first set of one or more threshold voltage ranges below the first word line sensing voltage of the one memory sense operation, or (b) data corresponding to a second set of one or more threshold voltage ranges above the first word line sensing voltage of the one memory sense operation. The multiple measurements include a second measurement, of error correction data of the memory cell indicating relative position within a particular threshold voltage range of a stored threshold voltage in the memory cell.

    Abstract translation: 通过在存储器单元上具有第一字线感测电压的一个存储器感测操作进行多次测量。 多个测量包括第一测量,存储单元是否存储:(a)与一个存储器感测操作的第一字线感测电压之下的一个或多个阈值电压范围的第一组对应的数据,或(b) 数据对应于在一个存储器感测操作的第一字线感测电压之上的一个或多个阈值电压范围的第二组。 所述多个测量包括第二测量,所述存储器单元的误差校正数据指示所述存储器单元中存储的阈值电压的特定阈值电压范围内的相对位置。

    Method and apparatus of measuring error correction data for memory
    3.
    发明授权
    Method and apparatus of measuring error correction data for memory 有权
    测量存储器误差校正数据的方法和装置

    公开(公告)号:US09299459B2

    公开(公告)日:2016-03-29

    申请号:US13866834

    申请日:2013-04-19

    Abstract: Multiple measurements are made with one memory sense operation having a first word line sensing voltage on a memory cell. The multiple measurements include a first measurement, of whether the memory cell stores either: (a) data corresponding to a first set of one or more threshold voltage ranges below the first word line sensing voltage of the one memory sense operation, or (b) data corresponding to a second set of one or more threshold voltage ranges above the first word line sensing voltage of the one memory sense operation. The multiple measurements include a second measurement, of error correction data of the memory cell indicating relative position within a particular threshold voltage range of a stored threshold voltage in the memory cell.

    Abstract translation: 通过在存储器单元上具有第一字线感测电压的一个存储器感测操作进行多次测量。 多个测量包括第一测量,存储单元是否存储:(a)与一个存储器感测操作的第一字线感测电压之下的一个或多个阈值电压范围的第一组对应的数据,或(b) 数据对应于在一个存储器感测操作的第一字线感测电压之上的一个或多个阈值电压范围的第二组。 所述多个测量包括第二测量,所述存储器单元的误差校正数据指示所述存储器单元中存储的阈值电压的特定阈值电压范围内的相对位置。

    Length-compatible extended polar codes

    公开(公告)号:US09628114B2

    公开(公告)日:2017-04-18

    申请号:US14794059

    申请日:2015-07-08

    Abstract: A method for increasing coding reliability includes generating a generator matrix for an extended polar code including a standard polar code part and an additional frozen part. The standard polar code part has N bit-channels, including K information bit-channels and N−K frozen bit-channels. The additional frozen part has q additional frozen bit-channels. Among the K information bit-channels, q information bit-channels are re-polarized using the q additional frozen bit-channels. The method further includes receiving an input vector including K information bits and N+q−K frozen bits, and transforming, using the generator matrix, the input vector to an output vector including N+q encoded bits. The K information bits are allocated to the K information bit-channels, and the N+q−K frozen bits are allocated to the N−K frozen bit-channels and the q additional frozen bit-channels.

    Extended polar codes
    5.
    发明授权

    公开(公告)号:US10128982B2

    公开(公告)日:2018-11-13

    申请号:US15287120

    申请日:2016-10-06

    Abstract: A method for increasing coding reliability includes generating a generator matrix for an extended polar code including a standard polar code part and an additional frozen part. The standard polar code part has N bit-channels, including K information bit-channels and N−K frozen bit-channels. The additional frozen part has q additional frozen bit-channels. Among the K information bit-channels, q information bit-channels are re-polarized using the q additional frozen bit-channels. The method further includes receiving an input vector including K information bits and N+q−K frozen bits, and transforming, using the generator matrix, the input vector to an output vector including N+q encoded bits. The K information bits are allocated to the K information bit-channels, and the N+q−K frozen bits are allocated to the N−K frozen bit-channels and the q additional frozen bit-channels.

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