Abstract:
Multiple measurements are made with one memory sense operation having a first word line sensing voltage on a memory cell. The multiple measurements include a first measurement, of whether the memory cell stores either: (a) data corresponding to a first set of one or more threshold voltage ranges below the first word line sensing voltage of the one memory sense operation, or (b) data corresponding to a second set of one or more threshold voltage ranges above the first word line sensing voltage of the one memory sense operation. The multiple measurements include a second measurement, of error correction data of the memory cell indicating relative position within a particular threshold voltage range of a stored threshold voltage in the memory cell.
Abstract:
A method and a device for performing a polar codes channel-aware procedure are provided. A plurality of bit-channels have a polar code construction which is dynamic. The method includes the following steps. A plurality of reliability indices of some of the bit-channels are ranked. Whether an updating condition is satisfied is determined according to a ranking sequence of the reliability indices. If the updating condition is satisfied, the polar code construction is updated according to the ranking sequence of the reliability indices.
Abstract:
Multiple measurements are made with one memory sense operation having a first word line sensing voltage on a memory cell. The multiple measurements include a first measurement, of whether the memory cell stores either: (a) data corresponding to a first set of one or more threshold voltage ranges below the first word line sensing voltage of the one memory sense operation, or (b) data corresponding to a second set of one or more threshold voltage ranges above the first word line sensing voltage of the one memory sense operation. The multiple measurements include a second measurement, of error correction data of the memory cell indicating relative position within a particular threshold voltage range of a stored threshold voltage in the memory cell.
Abstract:
A method for increasing coding reliability includes generating a generator matrix for an extended polar code including a standard polar code part and an additional frozen part. The standard polar code part has N bit-channels, including K information bit-channels and N−K frozen bit-channels. The additional frozen part has q additional frozen bit-channels. Among the K information bit-channels, q information bit-channels are re-polarized using the q additional frozen bit-channels. The method further includes receiving an input vector including K information bits and N+q−K frozen bits, and transforming, using the generator matrix, the input vector to an output vector including N+q encoded bits. The K information bits are allocated to the K information bit-channels, and the N+q−K frozen bits are allocated to the N−K frozen bit-channels and the q additional frozen bit-channels.
Abstract:
A method for increasing coding reliability includes generating a generator matrix for an extended polar code including a standard polar code part and an additional frozen part. The standard polar code part has N bit-channels, including K information bit-channels and N−K frozen bit-channels. The additional frozen part has q additional frozen bit-channels. Among the K information bit-channels, q information bit-channels are re-polarized using the q additional frozen bit-channels. The method further includes receiving an input vector including K information bits and N+q−K frozen bits, and transforming, using the generator matrix, the input vector to an output vector including N+q encoded bits. The K information bits are allocated to the K information bit-channels, and the N+q−K frozen bits are allocated to the N−K frozen bit-channels and the q additional frozen bit-channels.