Storage device and operating method thereof
    1.
    发明授权
    Storage device and operating method thereof 有权
    存储装置及其操作方法

    公开(公告)号:US09396063B2

    公开(公告)日:2016-07-19

    申请号:US14276002

    申请日:2014-05-13

    CPC classification number: G06F11/1048 G06F11/1016

    Abstract: An operating method of a storage device is provided. The operating method comprises the following steps. First, a first data is read from a target address of a first storage unit. Then, an assisting unit checks whether the target address is corresponding to a second data stored in a second storage unit. If the target address is corresponding to the second data, the assisting unit updates the first data according to the second data to generate an updated data. Next, an Error Correction Code (ECC) performs a decoding process on the updated data to generate a decoded data.

    Abstract translation: 提供了一种存储装置的操作方法。 操作方法包括以下步骤。 首先,从第一存储单元的目标地址读取第一数据。 然后,辅助单元检查目标地址是否对应于存储在第二存储单元中的第二数据。 如果目标地址对应于第二数据,则辅助单元根据第二数据更新第一数据以产生更新的数据。 接下来,纠错码(ECC)对更新后的数据进行解码处理,生成译码后的数据。

    Memory with multiple levels of data retention
    2.
    发明授权
    Memory with multiple levels of data retention 有权
    具有多级数据保存的内存

    公开(公告)号:US09171616B2

    公开(公告)日:2015-10-27

    申请号:US14165136

    申请日:2014-01-27

    CPC classification number: G11C13/0064 G11C11/5678 G11C13/0069

    Abstract: A method for operating a memory includes receiving a command to program a data value at a memory cell, and an indication of which write mode in a plurality of write modes to use. Write modes in the plurality are characterized by different sets of resistance ranges that correspond to data values stored in the memory cell. The method includes executing a program operation according to the indicated one in the plurality of write modes to program the data value in the memory cell. The plurality of write modes includes a first write mode and a second write mode corresponding to shorter data retention than the first write mode. The first and second write modes are characterized by first and second sets of resistance ranges in the different sets of resistance ranges. The method includes periodically refreshing data values in memory cells storing data in the second write mode.

    Abstract translation: 一种用于操作存储器的方法包括接收对存储器单元的数据值进行编程的命令以及使用多种写入模式中的哪个写入模式的指示。 多个中的写入模式的特征在于对应于存储在存储单元中的数据值的不同的电阻范围。 该方法包括根据多个写入模式中指示的一个执行程序操作,以对存储单元中的数据值进行编程。 多个写入模式包括对应于比第一写入模式更短的数据保持的第一写入模式和第二写入模式。 第一和第二写入模式的特征在于不同的电阻范围集中的第一组和第二组电阻范围。 该方法包括在存储第二写入模式的数据的存储单元中周期性地刷新数据值。

    STORAGE DEVICE AND OPERATING METHOD THEREOF
    3.
    发明申请
    STORAGE DEVICE AND OPERATING METHOD THEREOF 有权
    存储器件及其操作方法

    公开(公告)号:US20150149867A1

    公开(公告)日:2015-05-28

    申请号:US14276002

    申请日:2014-05-13

    CPC classification number: G06F11/1048 G06F11/1016

    Abstract: An operating method of a storage device is provided. The operating method comprises the following steps. First, a first data is read from a target address of a first storage unit. Then, an assisting unit checks whether the target address is corresponding to a second data stored in a second storage unit. If the target address is corresponding to the second data, the assisting unit updates the first data according to the second data to generate an updated data. Next, an Error Correction Code (ECC) performs a decoding process on the updated data to generate a decoded data.

    Abstract translation: 提供了一种存储装置的操作方法。 操作方法包括以下步骤。 首先,从第一存储单元的目标地址读取第一数据。 然后,辅助单元检查目标地址是否对应于存储在第二存储单元中的第二数据。 如果目标地址对应于第二数据,则辅助单元根据第二数据更新第一数据以产生更新的数据。 接下来,纠错码(ECC)对更新后的数据进行解码处理,生成译码后的数据。

    MEMORY WITH MULTIPLE LEVELS OF DATA RETENTION
    4.
    发明申请
    MEMORY WITH MULTIPLE LEVELS OF DATA RETENTION 有权
    具有多级数据保存的记忆

    公开(公告)号:US20150043274A1

    公开(公告)日:2015-02-12

    申请号:US14165136

    申请日:2014-01-27

    CPC classification number: G11C13/0064 G11C11/5678 G11C13/0069

    Abstract: A method for operating a memory includes receiving a command to program a data value at a memory cell, and an indication of which write mode in a plurality of write modes to use. Write modes in the plurality are characterized by different sets of resistance ranges that correspond to data values stored in the memory cell. The method includes executing a program operation according to the indicated one in the plurality of write modes to program the data value in the memory cell. The plurality of write modes includes a first write mode and a second write mode corresponding to shorter data retention than the first write mode. The first and second write modes are characterized by first and second sets of resistance ranges in the different sets of resistance ranges. The method includes periodically refreshing data values in memory cells storing data in the second write mode.

    Abstract translation: 一种用于操作存储器的方法包括接收对存储器单元的数据值进行编程的命令以及使用多种写入模式中的哪个写入模式的指示。 多个中的写入模式的特征在于对应于存储在存储单元中的数据值的不同的电阻范围。 该方法包括根据多个写入模式中指示的一个执行程序操作,以对存储单元中的数据值进行编程。 多个写入模式包括对应于比第一写入模式更短的数据保持的第一写入模式和第二写入模式。 第一和第二写入模式的特征在于不同的电阻范围集中的第一组和第二组电阻范围。 该方法包括在存储第二写入模式的数据的存储单元中周期性地刷新数据值。

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