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公开(公告)号：US09252592B2
公开(公告)日：2016-02-02
申请号：US14184570
申请日：2014-02-19
Applicant: Macronix International Co., Ltd.
Inventor： Shih Yu Wang
Abstract: A semiconductor device includes a rectifier coupled between a circuit ground and a terminal for coupling to an external circuit, a transistor-enhanced current path coupled to the rectifier, and a switching circuit coupled to the transistor-enhanced current path and coupled between the terminal and the circuit ground. The switching circuit is configured to turn off the transistor-enhanced current path during normal operation, and turn on the transistor-enhanced current path when an electrostatic discharge occurs at the terminal.
Abstract translation: 半导体器件包括耦合在电路接地和用于耦合到外部电路的端子之间的整流器，耦合到整流器的晶体管增强电流路径，以及耦合到晶体管增强电流路径并耦合在端子与 电路接地。 开关电路被配置为在正常操作期间关断晶体管增强的电流路径，并且当在端子处发生静电放电时导通晶体管增强的电流路径。
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公开(公告)号：US20150194420A1
公开(公告)日：2015-07-09
申请号：US14150638
申请日：2014-01-08
Applicant: Macronix International Co., Ltd.
Inventor： Shih Yu Wang , Yao-Wen Chang , Tao-Cheng Lu
CPC classification number: H01L27/0262 , H01L27/0266 , H01L29/74 , H01L29/861
Abstract: A semiconductor device includes a substrate, and first and second wells formed in the substrate. The first well has a first conductivity type. The second well has a second conductivity type different than the first conductivity type. The device includes a first heavily-doped region having the first conductivity type and a second heavily-doped region having the first conductivity type. A portion of the first heavily-doped region is formed in the first well. The second heavily-doped region is formed in the second well. The device also includes an insulating layer formed over a channel region of the substrate between the first and second heavily-doped regions, and a gate electrode formed over the insulating layer. The device further includes a terminal for coupling to a circuit being protected, and a switching circuit coupled between the terminal and the first heavily-doped region, and between the terminal and the gate electrode.
Abstract translation: 半导体器件包括衬底以及形成在衬底中的第一阱和第二阱。 第一阱具有第一导电类型。 第二阱具有与第一导电类型不同的第二导电类型。 该器件包括具有第一导电类型的第一重掺杂区和具有第一导电类型的第二重掺杂区。 在第一阱中形成第一重掺杂区的一部分。 在第二阱中形成第二重掺杂区域。 该器件还包括在第一和第二重掺杂区域之间的衬底的沟道区域上形成的绝缘层，以及形成在绝缘层上的栅电极。 该器件还包括用于耦合到被保护的电路的端子，以及耦合在端子和第一重掺杂区域之间以及端子和栅电极之间的开关电路。
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公开(公告)号：US09082620B1
公开(公告)日：2015-07-14
申请号：US14150638
申请日：2014-01-08
Applicant: Macronix International Co., Ltd.
Inventor： Shih Yu Wang , Yao-Wen Chang , Tao-Cheng Lu
IPC: H01L29/74 , H01L31/111 , H01L27/02 , H01L29/08
CPC classification number: H01L27/0262 , H01L27/0266 , H01L29/74 , H01L29/861
Abstract: A semiconductor device includes a substrate, and first and second wells formed in the substrate. The first well has a first conductivity type. The second well has a second conductivity type different than the first conductivity type. The device includes a first heavily-doped region having the first conductivity type and a second heavily-doped region having the first conductivity type. A portion of the first heavily-doped region is formed in the first well. The second heavily-doped region is formed in the second well. The device also includes an insulating layer formed over a channel region of the substrate between the first and second heavily-doped regions, and a gate electrode formed over the insulating layer. The device further includes a terminal for coupling to a circuit being protected, and a switching circuit coupled between the terminal and the first heavily-doped region, and between the terminal and the gate electrode.
Abstract translation: 半导体器件包括衬底以及形成在衬底中的第一阱和第二阱。 第一阱具有第一导电类型。 第二阱具有与第一导电类型不同的第二导电类型。 该器件包括具有第一导电类型的第一重掺杂区和具有第一导电类型的第二重掺杂区。 在第一阱中形成第一重掺杂区的一部分。 在第二阱中形成第二重掺杂区域。 该器件还包括在第一和第二重掺杂区域之间的衬底的沟道区域上形成的绝缘层，以及形成在绝缘层上的栅电极。 该器件还包括用于耦合到被保护的电路的端子，以及耦合在端子和第一重掺杂区域之间以及端子和栅电极之间的开关电路。
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