公开(公告)号：US20070257009A1

公开(公告)日：2007-11-08

申请号：US11416801

申请日：2006-05-03

申请人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

发明人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

IPC分类号： C23F1/00

CPC分类号： H01J37/321 ,  H01L21/67069

摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.

摘要翻译： 一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。 该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨 工件表面。 该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移 所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

公开(公告)号：US20070257008A1

公开(公告)日：2007-11-08

申请号：US11416744

申请日：2006-05-03

申请人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

发明人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

IPC分类号： C23F1/00

CPC分类号： H01J37/32568 ,  H01J37/321

摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicators, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.

摘要翻译： 一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。 该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨 工件表面。 该方法还包括将（a）工件，（b）外源功率施加器，围绕径向倾斜轴线旋转至等离子体工艺参数的空间分布具有至少几乎最小的非 - 相对于共同的对称轴线对称，并且将内源功率施加器相对于外源功率施加器沿对称轴平移到空间分布具有至少几乎最小的非均匀性的位置 工件。

公开(公告)号：US20070256787A1

公开(公告)日：2007-11-08

申请号：US11416802

申请日：2006-05-03

申请人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

发明人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

IPC分类号： C23F1/00

CPC分类号： H01J37/321 ,  H01L21/67069

摘要： A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry.

摘要翻译： 用于处理工件的等离子体反应器包括处理室，其具有包括天花板的外壳，其具有垂直于天花板的垂直对称轴线，腔室内的工件支撑基座和大体上面对天花板的工艺气体注入装置， 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并具有径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到内部和外部施加器部分的RF功率设备，以及至少支撑外部施加器部分和 能够使至少外部施加部分围绕垂直于对称轴线的径向轴线倾斜，并且能够使至少外部施加器部分围绕对称轴线旋转。 反应器可以进一步包括升高装置，用于沿垂直对称轴线相对于彼此改变内部和外部部分的位置。 在优选实施例中，升降装置包括用于沿着垂直对称轴升高和降低内部施加器部分的升降致动器。

公开(公告)号：US20070256784A1

公开(公告)日：2007-11-08

申请号：US11416547

申请日：2006-05-03

申请人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

发明人： Madhavi Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim Ibrahim ,  Michael Grimbergen ,  Renee Koch ,  Sheeba Panayil

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01L21/68764

摘要： A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.

摘要翻译： 一种用于处理工件的等离子体反应器包括处理室，该处理室包括包括天花板并且具有大致垂直于所述天花板的对称垂直轴线的外壳，所述室内的工件支撑基座和大体上面对天花板，处理气体注入装置 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并包括径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到所述内部和外部施加器部分的RF电力设备，以及能够使工件支撑基座 或外部施加器部分围绕垂直于所述对称轴线的径向轴线，并且能够围绕所述对称轴线旋转所述工件支撑基座。 在优选实施例中，反应器还包括用于实现等离子体分布的轴对称调节的装置，其可以是（或两个）升降装置，用于沿所述垂直对称轴线相对于彼此改变所述内部和外部部分的位置， 或用于分配施加到内部和外部施加器部分的RF功率电平的装置。

公开(公告)号：US07431797B2

公开(公告)日：2008-10-07

申请号：US11416802

申请日：2006-05-03

申请人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

发明人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/321 ,  H01L21/67069

摘要： A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry.

摘要翻译： 用于处理工件的等离子体反应器包括处理室，其具有包括天花板的外壳，其具有垂直于天花板的垂直对称轴线，腔室内的工件支撑基座和大体上面对天花板的工艺气体注入装置， 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并具有径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到内部和外部施加器部分的RF功率设备，以及至少支撑外部施加器部分和 能够使至少外部施加部分围绕垂直于对称轴线的径向轴线倾斜，并且能够使至少外部施加器部分围绕对称轴线旋转。 反应器可以进一步包括升高装置，用于沿垂直对称轴线相对于彼此改变内部和外部部分的位置。 在优选实施例中，升降装置包括用于沿着垂直对称轴升高和降低内部施加器部分的升降致动器。

公开(公告)号：US07504041B2

公开(公告)日：2009-03-17

申请号：US11416801

申请日：2006-05-03

申请人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

发明人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01L21/67069

摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.

摘要翻译： 一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。 该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨 工件表面。 该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移 所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

公开(公告)号：US20090325387A1

公开(公告)日：2009-12-31

申请号：US12147341

申请日：2008-06-26

申请人： Xiaoyi Chen ,  Zhigang Mao ,  David Knick ,  Michael Grimbergen ,  Darin Bivens ,  Madhavi Chandrahood ,  Ibrahim Ibrahim ,  Ajay Kumar

发明人： Xiaoyi Chen ,  Zhigang Mao ,  David Knick ,  Michael Grimbergen ,  Darin Bivens ,  Madhavi Chandrahood ,  Ibrahim Ibrahim ,  Ajay Kumar

IPC分类号： H01L21/3065 ,  B44C1/22

CPC分类号： H01J37/32862 ,  G03F1/80

摘要： Embodiments of the invention include method for in-situ chamber dry clean after photomask plasma etching. In one embodiment, the method includes placing a photomask upon a support pedestal, introducing a process gas into a process chamber, forming a plasma from the process gas, etching a chromium containing layer disposed on the photomask in the presence of the plasma, removing the photomask from the support pedestal, placing a dummy substrate on the pedestal and performing an in-situ dry cleaning process by flowing a cleaning gas containing O2 through the process chamber while the dummy substrate is disposed on the support pedestal.

摘要翻译： 本发明的实施例包括在光掩模等离子体蚀刻之后的原位室干洗的方法。 在一个实施例中，该方法包括将光掩模放置在支撑基座上，将处理气体引入处理室，从处理气体形成等离子体，在存在等离子体的情况下蚀刻设置在光掩模上的含铬层， 将光学掩模从支撑基座上放置，并将虚设的基板放置在基座上，并且通过使含有O 2的清洁气体通过处理室进行原位干洗处理，同时将虚设基板设置在支撑基座上。

公开(公告)号：US07520999B2

公开(公告)日：2009-04-21

申请号：US11416744

申请日：2006-05-03

申请人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

发明人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

IPC分类号： B44C1/22 ,  H01L21/00

CPC分类号： H01J37/32568 ,  H01J37/321

摘要： A method for processing a workpiece in a plasma reactor chamber by applying RF source power to inner and outer source power applicators, and introducing a process gas into the reactor while rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the plasma distribution is nearly symmetrical, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution is nearly uniform.

摘要翻译： 一种通过将RF源功率施加到内源功率施加器和外源功率施加器来处理等离子体反应器室中的工件的方法，以及在（a）工件，（b）外部源 电源施加器，围绕径向倾斜轴线到等离子体分布近似对称的位置，以及将内源功率施加器相对于外源功率施加器沿着对称轴线平移到空间分布几乎均匀的位置 。

公开(公告)号：US07419551B2

公开(公告)日：2008-09-02

申请号：US11416547

申请日：2006-05-03

申请人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

发明人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/321 ,  H01L21/68764

摘要： A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.

摘要翻译： 一种用于处理工件的等离子体反应器包括处理室，该处理室包括包括天花板并且具有大致垂直于所述天花板的对称垂直轴线的外壳，所述室内的工件支撑基座和大体上面对天花板，处理气体注入装置 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并包括径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到所述内部和外部施加器部分的RF电力设备，以及能够使工件支撑基座 或外部施加器部分围绕垂直于所述对称轴线的径向轴线，并且能够围绕所述对称轴线旋转所述工件支撑基座。 在优选实施例中，反应器还包括用于实现等离子体分布的轴对称调节的装置，其可以是（或两个）升降装置，用于沿所述垂直对称轴线相对于彼此改变所述内部和外部部分的位置， 或用于分配施加到内部和外部施加器部分的RF功率电平的装置。

公开(公告)号：US07829243B2

公开(公告)日：2010-11-09

申请号：US11044341

申请日：2005-01-27

申请人： Xiaoyi Chen ,  Michael Grimbergen ,  Madhavi Chandrachood ,  Jeffrey X. Tran ,  Ajay Kumar ,  Simon Tam ,  Ramesh Krishnamurthy

发明人： Xiaoyi Chen ,  Michael Grimbergen ,  Madhavi Chandrachood ,  Jeffrey X. Tran ,  Ajay Kumar ,  Simon Tam ,  Ramesh Krishnamurthy

IPC分类号： G03F1/00

CPC分类号： C23F4/00 ,  G03F1/30 ,  G03F1/54 ,  G03F1/80

摘要： A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.

摘要翻译： 本文提供了蚀刻铬层的方法。 在一个实施例中，用于蚀刻铬层的方法包括在蚀刻室中设置膜层，所述膜层具有部分地通过图案化层暴露的铬层，向处理室提供至少一种含卤素的处理气体， 在处理室中的衬底支撑件上具有小于600瓦的多个功率脉冲，并且通过图案化掩模蚀刻铬层。 本文所述的用于等离子体蚀刻铬层的方法特别适用于制造光掩模。