利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

34 条记录 (耗时 0.037 秒)

    Plasma reactor with a dynamically adjustable plasma source power applicator
    1.
    发明授权
    Plasma reactor with a dynamically adjustable plasma source power applicator 有权
    具有动态可调等离子体源功率施加器的等离子体反应器

    公开(公告)号：US07431797B2

    公开(公告)日：2008-10-07

    申请号：US11416802

    申请日：2006-05-03

    申请人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

    发明人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/321 ,  H01L21/67069

    摘要： A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry.

    摘要翻译： 用于处理工件的等离子体反应器包括处理室，其具有包括天花板的外壳，其具有垂直于天花板的垂直对称轴线，腔室内的工件支撑基座和大体上面对天花板的工艺气体注入装置， 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并具有径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到内部和外部施加器部分的RF功率设备，以及至少支撑外部施加器部分和 能够使至少外部施加部分围绕垂直于对称轴线的径向轴线倾斜，并且能够使至少外部施加器部分围绕对称轴线旋转。 反应器可以进一步包括升高装置，用于沿垂直对称轴线相对于彼此改变内部和外部部分的位置。 在优选实施例中，升降装置包括用于沿着垂直对称轴升高和降低内部施加器部分的升降致动器。

    Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator
    2.
    发明授权
    Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator 有权
    使用动态可调的等离子体源功率施加器在等离子体反应器中处理工件的方法

    公开(公告)号：US07504041B2

    公开(公告)日：2009-03-17

    申请号：US11416801

    申请日：2006-05-03

    申请人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

    发明人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

    IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： H01J37/321 ,  H01L21/67069

    摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.

    摘要翻译： 一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。 该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨 工件表面。 该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移 所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

    Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another
    4.
    发明授权
    Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another 有权
    一种具有用于相对于彼此动态地调节等离子体源功率施加器和工件的装置的等离子体反应器

    公开(公告)号：US07419551B2

    公开(公告)日：2008-09-02

    申请号：US11416547

    申请日：2006-05-03

    申请人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

    发明人： Madhavi R. Chandrachood ,  Richard Lewington ,  Darin Bivens ,  Ajay Kumar ,  Ibrahim M. Ibrahim ,  Michael N. Grimbergen ,  Renee Koch ,  Sheeba J. Panayil

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/321 ,  H01L21/68764

    摘要： A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.

    摘要翻译： 一种用于处理工件的等离子体反应器包括处理室，该处理室包括包括天花板并且具有大致垂直于所述天花板的对称垂直轴线的外壳，所述室内的工件支撑基座和大体上面对天花板，处理气体注入装置 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并包括径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到所述内部和外部施加器部分的RF电力设备，以及能够使工件支撑基座 或外部施加器部分围绕垂直于所述对称轴线的径向轴线，并且能够围绕所述对称轴线旋转所述工件支撑基座。 在优选实施例中，反应器还包括用于实现等离子体分布的轴对称调节的装置，其可以是（或两个）升降装置，用于沿所述垂直对称轴线相对于彼此改变所述内部和外部部分的位置， 或用于分配施加到内部和外部施加器部分的RF功率电平的装置。

    Mask etch plasma reactor with variable process gas distribution
    5.
    发明申请
    Mask etch plasma reactor with variable process gas distribution 有权
    具有可变工艺气体分布的掩模蚀刻等离子体反应器

    公开(公告)号：US20080102202A1

    公开(公告)日：2008-05-01

    申请号：US11589426

    申请日：2006-10-30

    申请人： Madhavi R. Chandrachood ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Richard Lewington ,  Ibrahim M. Ibrahim ,  Sheeba J. Panayil ,  Ajay Kumar

    发明人： Madhavi R. Chandrachood ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Richard Lewington ,  Ibrahim M. Ibrahim ,  Sheeba J. Panayil ,  Ajay Kumar

    IPC分类号： C23C16/00 ,  H05H1/24

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449

    摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.

    摘要翻译： 用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括 外表面和内表面。 耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。 多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。 工艺气体供应提供工艺气体。 在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。 在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口 环的表面和（b）阀控制输入。 气阀配置控制器控制每个阀的阀门控制输入。

    Mask etch plasma reactor with variable process gas distribution
    7.
    发明授权
    Mask etch plasma reactor with variable process gas distribution 有权
    具有可变工艺气体分布的掩模蚀刻等离子体反应器

    公开(公告)号：US07976671B2

    公开(公告)日：2011-07-12

    申请号：US11589426

    申请日：2006-10-30

    申请人： Madhavi R. Chandrachood ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Richard Lewington ,  Ibrahim M. Ibrahim ,  Sheeba J. Panayil ,  Ajay Kumar

    发明人： Madhavi R. Chandrachood ,  Michael N. Grimbergen ,  Khiem K. Nguyen ,  Richard Lewington ,  Ibrahim M. Ibrahim ,  Sheeba J. Panayil ,  Ajay Kumar

    IPC分类号： H01L21/3063 ,  C23C16/505

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449

    摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.

    摘要翻译： 用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括 外表面和内表面。 耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。 多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。 工艺气体供应提供工艺气体。 在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。 在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口 环的表面和（b）阀控制输入。 气阀配置控制器控制每个阀的阀门控制输入。