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1.发明授权Plasma reactor with a dynamically adjustable plasma source power applicator 有权具有动态可调等离子体源功率施加器的等离子体反应器公开(公告)号：US07431797B2
公开(公告)日：2008-10-07
申请号：US11416802
申请日：2006-05-03
申请人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
发明人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01L21/67069
摘要： A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry.
摘要翻译： 用于处理工件的等离子体反应器包括处理室，其具有包括天花板的外壳，其具有垂直于天花板的垂直对称轴线，腔室内的工件支撑基座和大体上面对天花板的工艺气体注入装置， 腔室和耦合到腔室的真空泵。 反应器还包括覆盖天花板并具有径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到内部和外部施加器部分的RF功率设备，以及至少支撑外部施加器部分和 能够使至少外部施加部分围绕垂直于对称轴线的径向轴线倾斜，并且能够使至少外部施加器部分围绕对称轴线旋转。 反应器可以进一步包括升高装置，用于沿垂直对称轴线相对于彼此改变内部和外部部分的位置。 在优选实施例中，升降装置包括用于沿着垂直对称轴升高和降低内部施加器部分的升降致动器。
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公开(公告)号：US20080070130A1
公开(公告)日：2008-03-20
申请号：US11838418
申请日：2007-08-14
IPC分类号： G03F9/00
摘要： A phase shifting photomask comprising a patterned film stack formed on a transparent substrate and a method of fabricating the photomask are disclosed. In one embodiment, the film stack includes a first layer having a pre-determined value of transparency to light of an illumination source of a lithographic system and a second layer that is substantially transparent to the light and facilitates in the light a pre-determined phase shift.
摘要翻译： 公开了一种包括形成在透明基板上的图案化膜堆叠的相移光掩模和制造光掩模的方法。 在一个实施例中，薄膜叠层包括具有对光刻系统的照明源的透明度的预定值的第一层和对光基本上透明的第二层，并且在光中有助于预定阶段 转移。
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公开(公告)号：US06824813B1
公开(公告)日：2004-11-30
申请号：US09545110
申请日：2000-04-06
IPC分类号： H05H100
CPC分类号： H01J37/32935 , C23C16/401 , G01B11/0625 , G01B11/0683
摘要： A substrate processing apparatus comprises a chamber 28 capable of processing a substrate 20. A radiation source 58 provides radiation that is at least partially reflected from the substrate in the chamber. A radiation detector 62 is provided to detect the reflected radiation and generate a signal. A controller 100 is adapted to receive the signal and determine a property of the substrate 20 in situ during processing, before an onset of during or after processing of a material on the substrate 20.
摘要翻译： 衬底处理设备包括能够处理衬底20的腔室28.辐射源58提供至少部分地从腔室中的衬底反射的辐射。 提供辐射检测器62以检测反射的辐射并产生信号。 控制器100适于在处理期间在衬底20上的材料处理之前或之后开始时接收信号并确定衬底20的特性。
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公开(公告)号：US06390019B1
公开(公告)日：2002-05-21
申请号：US09096728
申请日：1998-06-11
申请人： Michael N. Grimbergen , Xue-Yu Qian
发明人： Michael N. Grimbergen , Xue-Yu Qian
IPC分类号： C23C1600
CPC分类号： H01J37/32458 , H01J37/321 , H01J37/32623
摘要： A process chamber 35 for processing a substrate 30 and monitoring the process conducted on the substrate 30, comprises a support 45, a gas distributor, and an exhaust 85. The process chamber 35 has a wall comprising a window 130 that allows light to be transmitted therethrough and reduces deposition of process residue from the process gas onto the window 130 during processing of the substrate 30. In one version, the window 130 comprises a transparent plate 135 covered by an overlying mask 140 that has at least one aperture 145 extending through the mask 140 so that light can be transmitted through the aperture 145 and the transparent plate 135.
摘要翻译： 用于处理基板30并监测在基板30上进行的过程的处理室35包括支撑件45，气体分配器和排气85.处理室35具有包括允许光传输的窗口130的壁 并且减少了处理残余物从工艺气体沉积到衬底30的处理过程中的窗口130.在一个版本中，窗口130包括被上覆掩模140覆盖的透明板135，该掩模140具有至少一个孔145， 掩模140，使得光可以透过孔145和透明板135透射。
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公开(公告)号：US08961804B2
公开(公告)日：2015-02-24
申请号：US13650930
申请日：2012-10-12
摘要： The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at different regions of the photomask to obtain desired etch rate or thickness loss. In one embodiment, the method includes etching a first substrate through a patterned mask layer in a plasma etch chamber, the first substrate having a backside disposed on a substrate support and a front side facing away from the substrate support, directing a first radiation source from the backside of the first substrate to a first area covered by the patterned mask layer, directing a second radiation source from the backside of the first substrate to a second area uncovered by the patterned mask layer, collecting a first signal reflected from the first area covered by the patterned mask layer, collecting a second signal reflected from the second area uncovered by the patterned mask layer, and analyzing the combined first and the second signal.
摘要翻译： 本发明提供了一种用于通过增强的工艺监测蚀刻光掩模衬底的方法和装置，例如通过在光掩模的不同区域提供光学监测以获得期望的蚀刻速率或厚度损失。 在一个实施例中，该方法包括通过等离子体蚀刻室中的图案化掩模层蚀刻第一衬底，第一衬底具有设置在衬底支撑件上的背面和远离衬底支撑件的前侧，引导第一辐射源从 将第一衬底的背面覆盖到由图案化掩模层覆盖的第一区域，将第二辐射源从第一衬底的背面引导到由图案化掩模层未覆盖的第二区域，收集从覆盖的第一区域反射的第一信号 通过图案化掩模层，收集由图案化掩模层未覆盖的第二区域反射的第二信号，以及分析组合的第一和第二信号。
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公开(公告)号：US07976671B2
公开(公告)日：2011-07-12
申请号：US11589426
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： H01L21/3063 , C23C16/505
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.
摘要翻译： 用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括 外表面和内表面。 耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。 多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。 工艺气体供应提供工艺气体。 在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。 在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口 环的表面和（b）阀控制输入。 气阀配置控制器控制每个阀的阀门控制输入。
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7.发明申请INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF 有权具有射频相控制的电感耦合等离子体反应器及其使用方法公开(公告)号：US20100224321A1
公开(公告)日：2010-09-09
申请号：US12717916
申请日：2010-03-04
IPC分类号： C23F1/08 , H01L21/3065
CPC分类号： H01J37/32165 , H01J37/321 , H01L21/67069
摘要： Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.
摘要翻译： 本发明的实施例通常提供一种电感耦合等离子体（ICP）反应器，其具有能够控制ICP源（第一RF源）和衬底偏压（第二RF源）之间的RF相位差的衬底RF偏压， 用于半导体工业中使用的等离子体处理反应堆。 RF相位差的控制为精细的过程调整提供了一个强大的旋钮。 例如，可以使用RF相位差的控制来控制平均蚀刻速率，蚀刻速率均匀性，蚀刻速率偏斜，临界尺寸（CD）均匀性和CD偏斜，CD范围，自DC偏置控制和 室匹配。
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8.发明授权Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator 有权使用动态可调的等离子体源功率施加器在等离子体反应器中处理工件的方法公开(公告)号：US07504041B2
公开(公告)日：2009-03-17
申请号：US11416801
申请日：2006-05-03
申请人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
发明人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
CPC分类号： H01J37/321 , H01L21/67069
摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.
摘要翻译： 一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。 该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨 工件表面。 该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移 所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。
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9.发明授权Ultra-stable, compact, high intensity fiber-coupled light source for use in monitoring and process control 失效超稳定，紧凑，高强度的光纤耦合光源，用于监控和过程控制公开(公告)号：US06534756B1
公开(公告)日：2003-03-18
申请号：US09602619
申请日：2000-06-22
IPC分类号： G01J132
CPC分类号： G02B6/4298
摘要： Mounting source components in a single piece machined housing block enhances stability of operation of a vapor lamp light source. Additionally, the light path providing sample light to a reference detector is matched to have the same numerical aperture as the optical fiber bundle used to output the light from the source. By matching the feedback optical path and the output optical path, more accurate, sensitive feedback control is made possible. Brightness of output of the light source is maximized by placing the vapor lamp as close as possible to the output fiber bundle. An output node provides a signal indicative of operational status of the light source, for use by a process controller.
摘要翻译： 在单件加工的外壳块中安装源组件增强了蒸汽灯光源的操作稳定性。 另外，向参考检测器提供采样光的光路被匹配以具有与用于输出来自光源的光的光纤束相同的数值孔径。 通过匹配反馈光路和输出光路，可以实现更精确，灵敏的反馈控制。 通过将蒸气灯尽可能靠近输出光纤束，使光源的输出的亮度最大化。 输出节点提供指示光源的操作状态的信号，供过程控制器使用。
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公开(公告)号：US09378930B2
公开(公告)日：2016-06-28
申请号：US12717916
申请日：2010-03-04
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32 , H01L21/67
CPC分类号： H01J37/32165 , H01J37/321 , H01L21/67069
摘要： Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.
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