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公开(公告)号：US11609122B1
公开(公告)日：2023-03-21
申请号：US17234355
申请日：2021-04-19
发明人： Ashok K. Sood , Elwood J. Egerton
摘要： The present disclosure is a infrared sensor capable of being integrated into a IR focal plane array. It includes of a CMOS based readout circuit with preamplification, noise filtering, and row/column address control. Using either a microbolometer device structure with either a thermal sensing element of vanadium oxide or amorphous silicon, a nanocomposite is fabricated on top of either of these materials comprising aligned or unaligned carbon nanotube films with IR trans missive layer of silicon nitride followed by one to five monolayers of graphene. These layers are connected in series minimizing the noise sources and enhancing the NEDT of each film. The resulting IR sensor is capable of NEDT of less than 1 mK. The wavelength response is from 2 to 12 microns. The approach is low cost using a process that takes advantage of the economies of scale of wafer level CMOS.
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公开(公告)号：US10983010B1
公开(公告)日：2021-04-20
申请号：US16424440
申请日：2019-05-28
发明人： Ashok K. Sood , Elwood J. Egerton
IPC分类号： G01J5/10
摘要： The present disclosure is an infrared sensor capable of being integrated into a IR focal plane array. It includes of a CMOS based readout circuit with preamplification, noise filtering, and row/column address control. Using either a microbolometer device structure with either a thermal sensing element of vanadium oxide or amorphous silicon, a nanocomposite is fabricated on top of either of these materials comprising aligned or unaligned carbon nanotube films with IR transmissive layer of silicon nitride followed by one to five monolayers of graphene. These layers are connected in series minimizing the noise sources and enhancing the NEDT of each film. The resulting IR sensor is capable of NEDT of less than 1 mK. The wavelength response is from 2 to 12 microns. The approach is low cost using a process that takes advantage of the economies of scale of wafer level CMOS.
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公开(公告)号：US10937914B1
公开(公告)日：2021-03-02
申请号：US16417592
申请日：2019-05-20
发明人： Elwood J. Egerton , Ashok K. Sood
IPC分类号： H01L31/028 , G01J5/04 , H01L31/08 , G01J5/08 , G01J5/24 , G01J5/20 , H01L31/101 , H01L31/112 , G01J5/22 , H01L29/16
摘要： Radiation detecting and sensing systems using graphene and methods of making the same are provided; including a substrate, a single or multiple layers of graphene nanoribbons, first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance, increasing sensitivity to IR radiation. Absorption over a wide wavelength range (200 nm to 1 mm) is possible based on the three alternative devices structures described within. Devices can variously include (a) a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules, (b) graphene layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector, and/or (c) tuned graphene layers layered on top of each other where a p-type layer and a n-type layer is created using a combination of oxidation and doping.
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4.发明授权公开(公告)号：US10281617B1
公开(公告)日：2019-05-07
申请号：US15219190
申请日：2016-07-25
IPC分类号： G02B1/118 , G02B1/18 , H01L31/0216
摘要： Durable hydrophobic antireflection structures for optical elements, optical windows, and front sheets of encapsulated photovoltaic and photonic devices are disclosed which can minimize reflection losses over the entire accessible portion of the solar spectrum simultaneously provide self-cleaning and finger-print-free surface. Reduced reflectance and self-cleaning surfaces are resulted from coating the front sheet of encapsulated device with combination of nonporous and porous nanostructured materials such as silicon dioxide nanorods and PTFE. Step-graded antireflection structures can exhibit excellent omnidirectional performance, significantly outperforming conventional quarter wavelength and low-high-low refractive index coatings. Methods of constructing nanostructured durable optical coatings with hydrophobic surfaces are disclosed that can cover large-area ridged and flexible substrates.
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公开(公告)号：US10593883B1
公开(公告)日：2020-03-17
申请号：US15384248
申请日：2016-12-19
发明人： Elwood J. Egerton , Ashok K. Sood
摘要： Ultraviolet (UV), Terahertz (THZ) and Infrared (IR) radiation detecting and sensing systems using graphene nanoribbons and methods to making the same. In an illustrative embodiment, the detector includes a substrate, single or multiple layers of graphene nanoribbons, and first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance to increase sensitivity to IR radiation. Absorption over a wide wavelength range of 200 nm to 1 mm are possible based on the two alternative devices structures described within. These two device types are a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules. The second device structure consists of a graphene nanoribbon layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector.
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公开(公告)号：US09677946B1
公开(公告)日：2017-06-13
申请号：US14757711
申请日：2015-12-22
发明人： Elwood J. Egerton , Ashok K. Sood
IPC分类号： G01J5/02 , G01J5/24 , H01L31/09 , H01L31/028 , G01J5/08
CPC分类号： G01J5/24 , G01J5/0853 , H01L31/028
摘要： The present disclosure relates to microbolometer structures having top layers of amorphous silicon or vanadium oxide. In some examples, combinations of carbon nanotubes, nanoparticles, and/or thin films can be deposited atop the existing top layer of amorphous silicon or top layer of vanadium oxide of a microbolometer structure. Such configurations can increase the sensitivity of the microbolometers to less than 4 mK, less than 2 mK, and in some examples less than 1 mK.
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公开(公告)号：US11340108B1
公开(公告)日：2022-05-24
申请号：US17035592
申请日：2020-09-28
发明人： Elwood J. Egerton , Ashok K. Sood
IPC分类号： G01J1/44 , H01L31/09 , G01J5/08 , G01J5/02 , H01L31/028
摘要： The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (
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公开(公告)号：US09851257B1
公开(公告)日：2017-12-26
申请号：US15393211
申请日：2016-12-28
发明人： Ashok K. Sood , Elwood J. Egerton
IPC分类号： G01J5/10
摘要： The present disclosure is a infrared sensor capable of being integrated into a IR focal plane array. It includes of a CMOS based readout circuit with preamplification, noise filtering, and row/column address control. Using either a microbolometer device structure with either a thermal sensing element of vanadium oxide or amorphous silicon, a nanocomposite is fabricated on top of either of these materials comprising aligned or unaligned carbon nanotube films with IR trans missive layer of silicon nitride followed by one to five monolayers of graphene. These layers are connected in series minimizing the noise sources and enhancing the NEDT of each film. The resulting IR sensor is capable of NEDT of less than 1 mK. The wavelength response is from 2 to 12 microns. The approach is low cost using a process that takes advantage of the economies of scale of wafer level CMOS.
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9.发明授权Ultraviolet, infrared and terahertz photo/radiation sensors using graphene layers to enhance sensitivity 有权使用石墨烯层的紫外线，红外和太赫兹照片/辐射传感器来提高灵敏度公开(公告)号：US09525136B1
公开(公告)日：2016-12-20
申请号：US14580198
申请日：2014-12-22
发明人： Elwood J. Egerton , Ashok K. Sood
CPC分类号： H01L51/0048 , G01J5/024 , G01J5/046 , G01J5/24 , H01L51/428 , H01L51/44
摘要： Ultraviolet (UV), Terahertz (THZ) and Infrared (IR) radiation detecting and sensing systems using graphene nanoribbons and methods to making the same. In an illustrative embodiment, the detector includes a substrate, single or multiple layers of graphene nanoribbons, and first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance to increase sensitivity to IR radiation. Absorption over a wide wavelength range of 200 nm to 1 mm are possible based on the two alternative devices structures described within. These two device types are a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules. The second device structure consists of a graphene nanoribbon layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector.
摘要翻译： 使用石墨烯纳米带的紫外线（UV），太赫兹（THZ）和红外（IR）辐射检测和感测系统以及制造相同的方法。 在说明性实施例中，检测器包括基板，单层或多层石墨烯纳米带，以及每个与石墨烯层电连通的第一和第二导电互连。 调整石墨烯层以增加电阻的温度系数以增加对IR辐射的敏感性。 基于在其中描述的两种备选装置结构，在200nm至1mm的宽波长范围内的吸收是可能的。 这两种器件类型是基于微热辐射计的石墨烯膜，其中该层的TCR被选择的官能化分子增强。 第二器件结构由具有源极和漏极金属互连的石墨烯纳米薄层和SiO 2栅极的沉积金属组成，其调制跨越光电晶体管检测器的电流。
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10.发明授权公开(公告)号：US11674851B1
公开(公告)日：2023-06-13
申请号：US17400052
申请日：2021-08-11
发明人： Ashok K. Sood , John W. Zeller
CPC分类号： G01J5/20 , H01L37/025
摘要： A high-performance Microbolometer that incorporates vanadium oxide (VOx) along with carbon nanotubes (CNTs) or graphene. This Microbolometer, which uses a microbridge comprising Si3N4 and VOx, provides low noise and high dynamic range longwave infrared (LWIR) band detection. Addition of CNTs/graphene provides a high level of performance [low 1/f noise, noise equivalent temperature difference (NETD), and thermal time constant] due to the high temperature coefficient of resistance (TCR) of these materials.
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