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1.发明申请公开(公告)号：US20110076177A1
公开(公告)日：2011-03-31
申请号：US12935564
申请日：2009-04-01
申请人： Makoto Aratani , Toshikatsu Kato , Katsuhito Kawamura , Takumi Tanaka , Katsumi Kojima , Kaku Sato , Shigeko Sujita , Masaki Koizumi
发明人： Makoto Aratani , Toshikatsu Kato , Katsuhito Kawamura , Takumi Tanaka , Katsumi Kojima , Kaku Sato , Shigeko Sujita , Masaki Koizumi
CPC分类号： C21D8/0263 , B21B1/26 , C21D8/0426 , C21D8/0436 , C21D8/0442 , C21D8/0473 , C21D2211/004 , C22C38/001 , C22C38/02 , C22C38/04 , C22C38/06
摘要： A steel sheet for cans that has a yield stress of at least 500 Mpa after coating and baking and a method for manufacturing the steel sheet for cans are provided. The steel sheet for cans contains, on the basis of mass percent, C: more than 0.02% but 0.10% or less, Si: 0.10% or less, Mn: 1.5% or less, P: 0.20% or less, S: 0.20% or less, Al: 0.10% or less, N: 0.0120% to 0.0250%, dissolved N being 0.0100% or more, and a remainder of Fe and incidental impurities. A high-strength material can be obtained by maintaining the absolute quantity of dissolved N at a certain value or more and performing hardening by quench aging and strain aging, for example, in a printing process, a film lamination process, or a drying and baking process performed before can manufacturing. In the manufacture, hot rolling is performed at a slab extraction temperature of 1200° C. or more and a finish rolling temperature of (Ar3 transformation temperature—30)° C. or more, and coiling is performed at 650° C. or less.
摘要翻译： 提供了涂布烘烤后屈服应力为500MPa以上的罐用钢板和罐用钢板的制造方法。 罐头用钢板以质量％计含有C：0.02％以上且0.10％以下，Si：0.10％以下，Mn：1.5％以下，P：0.20％以下，S：0.20 ％以下，Al：0.10％以下，N：0.0120％〜0.0250％，N为0.0100％以上，余量为Fe及杂质。 通过将溶解的N的绝对量保持在一定值以上，通过淬火时效和应变时效进行硬化，例如在印刷工序，薄膜层压工序，干燥烘烤中，可以得到高强度材料 可以制造之前执行的过程。 在制造中，以1200℃以上的板坯提取温度和（Ar 3相变温度-30℃）以上的精轧温度进行热轧，并且在650℃以下进行卷取 。
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公开(公告)号：US20090142513A1
公开(公告)日：2009-06-04
申请号：US12352197
申请日：2009-01-12
IPC分类号： C23C16/513 , C23C16/44 , B05C11/00 , B08B5/00 , B08B6/00
CPC分类号： C23C16/08 , C23C16/4405
摘要： A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.
摘要翻译： 供给处理气体以在预定数量的晶片W上形成Ti基膜，同时将室1中的基座2的温度设定到预定温度。 之后，通过将作为清洗气体的Cl 2气体从淋浴喷头10排出到室1中来清洁不含晶片W的室1的内部。在该清洁期间，基座2，淋浴头10 ，并且独立地控制室1的壁部，使得基座2的温度不低于Cl 2气体的分解开始温度，并且喷淋头10的温度和室1的壁部分的温度不高 比分解开始温度高。
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公开(公告)号：US08021717B2
公开(公告)日：2011-09-20
申请号：US12352197
申请日：2009-01-12
IPC分类号： C23C16/08
CPC分类号： C23C16/08 , C23C16/4405
摘要： A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.
摘要翻译： 供给处理气体以在预定数量的晶片W上形成Ti基膜，同时将室1中的基座2的温度设定到预定温度。 之后，通过将作为清洗气体的Cl 2气体从淋浴喷头10排出到室1中来清洁不含晶片W的室1的内部。在该清洁期间，基座2，淋浴头10 ，并且独立地控制室1的壁部，使得基座2的温度不低于Cl 2气体的分解开始温度，并且喷淋头10的温度和室1的壁部分的温度不高 比分解开始温度高。
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