-
公开(公告)号：US20090142513A1
公开(公告)日：2009-06-04
申请号：US12352197
申请日：2009-01-12
IPC分类号： C23C16/513 , C23C16/44 , B05C11/00 , B08B5/00 , B08B6/00
CPC分类号： C23C16/08 , C23C16/4405
摘要： A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.
摘要翻译： 供给处理气体以在预定数量的晶片W上形成Ti基膜，同时将室1中的基座2的温度设定到预定温度。 之后，通过将作为清洗气体的Cl 2气体从淋浴喷头10排出到室1中来清洁不含晶片W的室1的内部。在该清洁期间，基座2，淋浴头10 ，并且独立地控制室1的壁部，使得基座2的温度不低于Cl 2气体的分解开始温度，并且喷淋头10的温度和室1的壁部分的温度不高 比分解开始温度高。
-
公开(公告)号：US08021717B2
公开(公告)日：2011-09-20
申请号：US12352197
申请日：2009-01-12
IPC分类号： C23C16/08
CPC分类号： C23C16/08 , C23C16/4405
摘要： A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.
摘要翻译： 供给处理气体以在预定数量的晶片W上形成Ti基膜，同时将室1中的基座2的温度设定到预定温度。 之后，通过将作为清洗气体的Cl 2气体从淋浴喷头10排出到室1中来清洁不含晶片W的室1的内部。在该清洁期间，基座2，淋浴头10 ，并且独立地控制室1的壁部，使得基座2的温度不低于Cl 2气体的分解开始温度，并且喷淋头10的温度和室1的壁部分的温度不高 比分解开始温度高。
-
3.发明申请公开(公告)号：US20070204147A1
公开(公告)日：2007-08-30
申请号：US11741939
申请日：2007-04-30
CPC分类号： H01L21/02183 , C23C16/405 , C23C16/4404 , H01L21/0228 , H01L21/31637
摘要： Disclosed is a film forming method using a film forming gas composed of a metal alkoxide wherein clean film formation suppressed in contamination of a target substrate to be processed is achieved by restraining aluminum or an aluminum alloy in the processing chamber from dissolving. Specifically disclosed is method for forming a thin film on a target substrate to be processed which is held in a processing chamber, and this method comprises a step for heating the target substrate and a step for supplying a film forming gas into the processing chamber. This method is characterized in that the film forming gas is composed of a metal alkoxide, the processing chamber is made of aluminum or an aluminum alloy, and a protective film composed of a nonporous anodic oxide film is formed on the inner wall surface of the processing chamber.
摘要翻译： 公开了使用由金属醇盐构成的成膜气体的成膜方法，其中通过抑制处理室中的铝或铝合金溶解来实现抑制待加工的目标基板污染的清洁膜形成。 具体公开了在保持在处理室中的待处理对象基板上形成薄膜的方法，该方法包括加热目标基板的步骤和将成膜气体供给到处理室中的步骤。 该方法的特征在于，成膜气体由金属醇盐构成，处理室由铝或铝合金制成，并且在处理的内壁表面上形成由无孔阳极氧化膜构成的保护膜 房间。
-
4.发明授权公开(公告)号：US07713886B2
公开(公告)日：2010-05-11
申请号：US11741939
申请日：2007-04-30
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02183 , C23C16/405 , C23C16/4404 , H01L21/0228 , H01L21/31637
摘要： Disclosed is a film forming method using a film forming gas composed of a metal alkoxide wherein clean film formation suppressed in contamination of a target substrate to be processed is achieved by restraining aluminum or an aluminum alloy in the processing chamber from dissolving. Specifically disclosed is method for forming a thin film on a target substrate to be processed which is held in a processing chamber, and this method comprises a step for heating the target substrate and a step for supplying a film forming gas into the processing chamber. This method is characterized in that the film forming gas is composed of a metal alkoxide, the processing chamber is made of aluminum or an aluminum alloy, and a protective film composed of a nonporous anodic oxide film is formed on the inner wall surface of the processing chamber.
摘要翻译： 公开了使用由金属醇盐构成的成膜气体的成膜方法，其中通过抑制处理室中的铝或铝合金溶解来实现抑制待加工的目标基板污染的清洁膜形成。 具体公开了在保持在处理室中的待处理对象基板上形成薄膜的方法，该方法包括加热目标基板的步骤和将成膜气体供给到处理室中的步骤。 该方法的特征在于，成膜气体由金属醇盐构成，处理室由铝或铝合金制成，并且在处理的内壁表面上形成由无孔阳极氧化膜构成的保护膜 房间。
-
公开(公告)号：US06404021B1
公开(公告)日：2002-06-11
申请号：US09023712
申请日：1998-02-13
IPC分类号： H01L2976
CPC分类号： H01L29/4933 , H01L21/28061 , H01L21/76889 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
摘要翻译： 形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层 在栅极膜靶的表面上的P型杂质可能不会在多晶硅层上形成保持成膜装置中的处理对象以防止形成氧化膜的步骤， 用于形成钨硅化物膜的处理气体和P型杂质成膜装置，以在不形成氧化膜的多晶硅层上形成掺有P型杂质的杂质的硅化钨层 。
-
6.发明授权Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon 失效形成叠层结构以增强多晶硅上的金属硅化物附着力的方法公开(公告)号：US06489208B2
公开(公告)日：2002-12-03
申请号：US10042148
申请日：2002-01-11
IPC分类号： H01L2128
CPC分类号： H01L29/4933 , H01L21/28061 , H01L21/76889 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film on the poly-crystal silicon layer; and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.
摘要翻译： 形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层 P型杂质，在栅极膜靶的表面上，保持成膜装置中的处理对象以防止在多晶硅层上形成氧化膜的步骤; 以及向所述成膜装置供给硅化钨成膜用处理气体和P型杂质的工序，在所述多晶硅层上形成掺杂有P型杂质的杂质的硅化钨层， 不形成氧化膜。
-
公开(公告)号：US6042653A
公开(公告)日：2000-03-28
申请号：US93430
申请日：1998-06-08
申请人： Sumi Tanaka , Nobutaka Nakajima , Masato Koizumi
发明人： Sumi Tanaka , Nobutaka Nakajima , Masato Koizumi
IPC分类号： C23C16/44 , C23C16/458 , H01L21/205 , H01L21/687 , C23C16/00
CPC分类号： H01L21/68742 , C23C16/4583 , H01L21/68785
摘要： A susceptor according to the present invention is set in a process chamber for subjecting an object to a specific process and can bear the object thereon. The susceptor includes a stepped section for defining a recessed bearing region capable of bearing the object therein and positioning the object on the susceptor, and at least one groove formed in the bearing region and used to allow a gas remaining in a gap between the object and that part of the susceptor which includes the stepped section to get out of the bearing region.
摘要翻译： 根据本发明的感受器设置在处理室中，用于使物体受到特定的处理并且能够承受其上的物体。 基座包括用于限定能够承载其中的物体的凹入轴承区域的台阶部分，并且将物体定位在基座上，以及形成在轴承区域中的至少一个槽，并且用于允许残留在物体和 该基座的该部分包括阶梯部分以离开轴承区域。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.024 秒)
