公开(公告)号：US20090021620A1

公开(公告)日：2009-01-22

申请号：US11573985

申请日：2005-08-02

申请人： Makoto Inagaki ,  Kazuaki Igaki ,  Motohiro Kojima

发明人： Makoto Inagaki ,  Kazuaki Igaki ,  Motohiro Kojima

IPC分类号： H04N5/335

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/335

摘要： A plurality of pixels, each including a second conductivity-type photodiode portion 1 formed in a first conductivity-type well region and an amplifier transistor 6 for amplifying and outputting charge accumulated in the photodiode portion, are arrayed two-dimensionally. Furthermore, an intra-pixel contact 2 for providing the well region with a reference voltage is provided in the photodiode portion. With this configuration, it is possible to achieve a rational intra-pixel GND contact arrangement with which the afterimage characteristics are improved and the optical characteristics are not affected adversely.

摘要翻译： 每个包括形成在第一导电类型阱区中的第二导电类型光电二极管部分1和用于放大和输出积聚在光电二极管部分中的电荷的放大器晶体管6的多个像素二维排列。 此外，在光电二极管部分中提供用于向阱区域提供参考电压的像素内接点2。 利用这种配置，可以实现有效的像素间GND接触布置，残留图像特性被改善并且不会不利地影响光学特性。

公开(公告)号：US20060244088A1

公开(公告)日：2006-11-02

申请号：US11390246

申请日：2006-03-28

申请人： Makoto Inagaki ,  Kazuaki Igaki ,  Kosaku Saeki

发明人： Makoto Inagaki ,  Kazuaki Igaki ,  Kosaku Saeki

IPC分类号： H01L31/00

CPC分类号： H01L27/1462 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14643 ,  H01L31/0232

摘要： A MOS solid-state image pick-up device with a high S/N ratio is provided. On a surface of a photo-detecting section 2 formed inside a semiconductor substrate, an antireflection film 10 having a smaller area than a surface area of the photo-detecting section 2, with an insulating film 6 imposed therebetween, is provided. The antireflection film 10 is formed so as not to cover bordering portions between the photo-detecting section 2 and peripheral regions thereof. Each of a distance of a clearance S1 between the antireflection film 10 and a gate electrode 7 and a distance of a clearance between the antireflection film 10 and an element isolation region 5 is preferably equal to or greater than 0.2 μm. When the area of the antireflection film 10 is equal to or greater than 70% of the surface area of the photo-detecting section 2, even if used for a camera with interchangeable lenses, a fluctuation in sensitivity among pixels can be suppressed.

摘要翻译： 提供了具有高S / N比的MOS固体摄像装置。 在形成在半导体衬底内的光电检测部分2的表面上，设置了具有比光电检测部分2的表面积小的面积的反射防止膜10，其间施加有绝缘膜6。 防反射膜10形成为不覆盖光电检测部分2及其周边区域之间的边界部分。 防反射膜10和栅电极7之间的间隙S 1的距离与防反射膜10与元件隔离区域5之间的​​间隙的距离优选为0.2μm以上。 当防反射膜10的面积等于或大于光检测部分2的表面积的70％时，即使用于具有可互换透镜的照相机，也可以抑制像素之间的灵敏度的波动。