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公开(公告)号：US20090021620A1
公开(公告)日：2009-01-22
申请号：US11573985
申请日：2005-08-02
申请人： Makoto Inagaki , Kazuaki Igaki , Motohiro Kojima
发明人： Makoto Inagaki , Kazuaki Igaki , Motohiro Kojima
IPC分类号： H04N5/335
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14636 , H01L27/14643 , H04N5/335
摘要： A plurality of pixels, each including a second conductivity-type photodiode portion 1 formed in a first conductivity-type well region and an amplifier transistor 6 for amplifying and outputting charge accumulated in the photodiode portion, are arrayed two-dimensionally. Furthermore, an intra-pixel contact 2 for providing the well region with a reference voltage is provided in the photodiode portion. With this configuration, it is possible to achieve a rational intra-pixel GND contact arrangement with which the afterimage characteristics are improved and the optical characteristics are not affected adversely.
摘要翻译： 每个包括形成在第一导电类型阱区中的第二导电类型光电二极管部分1和用于放大和输出积聚在光电二极管部分中的电荷的放大器晶体管6的多个像素二维排列。 此外，在光电二极管部分中提供用于向阱区域提供参考电压的像素内接点2。 利用这种配置，可以实现有效的像素间GND接触布置，残留图像特性被改善并且不会不利地影响光学特性。
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公开(公告)号：US20060244088A1
公开(公告)日：2006-11-02
申请号：US11390246
申请日：2006-03-28
申请人： Makoto Inagaki , Kazuaki Igaki , Kosaku Saeki
发明人： Makoto Inagaki , Kazuaki Igaki , Kosaku Saeki
IPC分类号： H01L31/00
CPC分类号： H01L27/1462 , H01L27/14603 , H01L27/14605 , H01L27/14623 , H01L27/14627 , H01L27/14643 , H01L31/0232
摘要： A MOS solid-state image pick-up device with a high S/N ratio is provided. On a surface of a photo-detecting section 2 formed inside a semiconductor substrate, an antireflection film 10 having a smaller area than a surface area of the photo-detecting section 2, with an insulating film 6 imposed therebetween, is provided. The antireflection film 10 is formed so as not to cover bordering portions between the photo-detecting section 2 and peripheral regions thereof. Each of a distance of a clearance S1 between the antireflection film 10 and a gate electrode 7 and a distance of a clearance between the antireflection film 10 and an element isolation region 5 is preferably equal to or greater than 0.2 μm. When the area of the antireflection film 10 is equal to or greater than 70% of the surface area of the photo-detecting section 2, even if used for a camera with interchangeable lenses, a fluctuation in sensitivity among pixels can be suppressed.
摘要翻译： 提供了具有高S / N比的MOS固体摄像装置。 在形成在半导体衬底内的光电检测部分2的表面上，设置了具有比光电检测部分2的表面积小的面积的反射防止膜10，其间施加有绝缘膜6。 防反射膜10形成为不覆盖光电检测部分2及其周边区域之间的边界部分。 防反射膜10和栅电极7之间的间隙S 1的距离与防反射膜10与元件隔离区域5之间的间隙的距离优选为0.2μm以上。 当防反射膜10的面积等于或大于光检测部分2的表面积的70％时，即使用于具有可互换透镜的照相机，也可以抑制像素之间的灵敏度的波动。
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公开(公告)号：US08299512B2
公开(公告)日：2012-10-30
申请号：US13185199
申请日：2011-07-18
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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公开(公告)号：US08018511B2
公开(公告)日：2011-09-13
申请号：US12161612
申请日：2006-10-24
CPC分类号： H04N5/378 , H04N5/3742 , H04N5/3765
摘要： According to the present invention, as a structure of a pixel section (10), in each of columns from a first to a m-th column, a plurality of pixel signals outputted from a plurality of pixels arranged in a column direction are transmitted, respectively, to a plurality of output signal lines (15l to 15n) different from each other. Then, a read control and are set control are simultaneously executed on the plurality of pixels.
摘要翻译： 根据本发明，作为像素部（10）的结构，在从第一至第m列的各列中发送从列方向排列的多个像素输出的多个像素信号， 分别对应于彼此不同的多个输出信号线（15 1〜15 n）。 然后，对多个像素同时执行读取控制和设置控制。
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公开(公告)号：US08017983B2
公开(公告)日：2011-09-13
申请号：US12720554
申请日：2010-03-09
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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公开(公告)号：US20100309355A1
公开(公告)日：2010-12-09
申请号：US12857157
申请日：2010-08-16
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
摘要翻译： 使用的放大型固态成像装置至少包括通过在半导体衬底7上一维或二维地排列将入射光转换成信号电荷的多个像素而形成的光接收部分10，并输出对应于 信号电荷的量，从各个像素依次读出电信号的读取器，用于抑制由读取器读出的电信号的寄生信号的噪声抑制电路11以及位于第一遮光层1上的第一遮光层1 光接收部10的上部，以限制光进入像素的光电转换部10a以外的部分。 此外，在噪声抑制电路11的上部设置有用于限制入射到噪声抑制电路11中的第二遮光层2。
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公开(公告)号：US07714920B2
公开(公告)日：2010-05-11
申请号：US12071090
申请日：2008-02-15
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/3577 , H04N5/374
摘要： Photosensitive cells each includes a photodiode (1), a transfer gate (2), a floating diffusion layer portion (3), an amplifying transistor (4), and a reset transistor (5). Drains of the amplifying transistors (4) of the photosensitive cells are connected to a power supply line (10), and a pulsed power supply voltage (VddC) is applied to the power supply line (10). Here, a low-level potential (VddC_L) of the power supply voltage has a predetermined potential higher than zero potential. Specifically, by making the low-level potential (VddC_L) higher than channel potentials obtained when a low level is applied to the reset transistors (5), or channel potentials obtained when a low level is applied to the transfer gates (2), or channel potentials of the photodiodes (1), a reproduced image with low noise is read.
摘要翻译： 感光单元每个包括光电二极管（1），传输门（2），浮动扩散层部分（3），放大晶体管（4）和复位晶体管（5）。 感光单元的放大晶体管（4）的漏极连接到电源线（10），并且将脉冲电源电压（VddC）施加到电源线（10）。 这里，电源电压的低电平电位（VddC_L）具有高于零电位的预定电位。 具体地说，通过使低电位电位（VddC_L）高于当向复位晶体管（5）施加低电平时获得的沟道电位，或者当低电平施加到传输门（2）时获得的沟道电位，或 读取光电二极管（1）的通道电位，读出低噪声的再现图像。
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公开(公告)号：US07696543B2
公开(公告)日：2010-04-13
申请号：US11396485
申请日：2006-04-04
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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公开(公告)号：US20080231733A1
公开(公告)日：2008-09-25
申请号：US11568565
申请日：2005-07-27
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
摘要翻译： 使用的放大型固态成像装置至少包括通过在半导体衬底7上一维或二维地排列将入射光转换成信号电荷的多个像素而形成的光接收部分10，并输出对应于 信号电荷的量，从各个像素依次读出电信号的读取器，用于抑制由读取器读出的电信号的寄生信号的噪声抑制电路11以及位于第一遮光层1上的第一遮光层1 光接收部分10的上部，以便限制光进入像素的光电转换部分10a以外的部分。 此外，在噪声抑制电路11的上部设置有用于限制入射到噪声抑制电路11中的第二遮光层2。
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10.发明授权Solid-state imaging device with multiple impurity regions and method for manufacturing the same 有权具有多个杂质区的固态成像装置及其制造方法公开(公告)号：US06765246B2
公开(公告)日：2004-07-20
申请号：US10226375
申请日：2002-08-21
申请人： Makoto Inagaki
发明人： Makoto Inagaki
IPC分类号： H01L27148
CPC分类号： H01L27/14656 , H01L27/14603 , H01L27/14643 , H01L27/14806 , H01L27/14887
摘要： The solid-state imaging device according to one embodiment of the present invention includes a semiconductor substrate, a plurality of photoelectric conversion regions arrayed in the vertical direction and the horizontal direction on the surface of the substrate, and an electric charge transfer region disposed between the photoelectric conversion regions adjacent in the horizontal direction of the substrate. The substrate comprises a n-type semiconductor substrate, a first p-type impurity region formed on the n-type semiconductor substrate, a semiconductor regions formed on the first p-type impurity region, and a second p-type impurity region disposed below the electric charge transfer region. The photoelectric conversion region and the electric charge transfer region are n-type impurity regions formed on the surface portion of the semiconductor region. A third p-type impurity region is formed in at least one region selected from the group consisting of a region located between the photoelectric conversion regions adjacent in the vertical direction and a region located below the second p-type impurity region between the photoelectric conversion regions adjacent in the horizontal direction in the semiconductor region.
摘要翻译： 根据本发明的一个实施例的固态成像装置包括半导体衬底，在衬底的表面上沿垂直方向和水平方向排列的多个光电转换区域，以及设置在衬底之间的电荷转移区域 在基板的水平方向上相邻的光电转换区域。 基板包括n型半导体基板，形成在n型半导体基板上的第一p型杂质区域，形成在第一p型杂质区域上的半导体区域和设置在第一p型杂质区域的第二p型杂质区域 电荷转移区域。 光电转换区域和电荷转移区域是形成在半导体区域的表面部分上的n型杂质区域。 在选自由垂直方向相邻的光电转换区域和位于光电转换区域之间的第二p型杂质区域下方的区域中的至少一个区域中形成第三p型杂质区域 在半导体区域中在水平方向上相邻。
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