公开(公告)号：US5340999A

公开(公告)日：1994-08-23

申请号：US968453

申请日：1992-10-29

申请人： Makoto Takeda ,  Tadanori Hishida

发明人： Makoto Takeda ,  Tadanori Hishida

IPC分类号： H01L29/49 ,  H01L27/01 ,  H01L27/13 ,  H01L29/78

CPC分类号： H01L29/4908

摘要： An insulated gate thin film transistor (TFT) comprises first and second insulating films, and a semiconductor film disposed thereon. The first insulating film is prepared with anodization. The second insulating film is prepared with CVD or sputtering. The semiconductor film is amorphous, or microcrystalline prepared with glow discharge.

摘要翻译： 绝缘栅极薄膜晶体管（TFT）包括第一和第二绝缘膜以及设置在其上的半导体膜。 第一绝缘膜由阳极氧化制备。 第二绝缘膜由CVD或溅射制备。 半导体膜是无定形的，或用辉光放电制备的微晶。

公开(公告)号：US6104449A

公开(公告)日：2000-08-15

申请号：US190711

申请日：1998-11-12

申请人： Eiichi Takahashi ,  Yasunori Nishimura ,  Tadanori Hishida

发明人： Eiichi Takahashi ,  Yasunori Nishimura ,  Tadanori Hishida

IPC分类号： G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G02F3/1333

CPC分类号： G02F1/136204

摘要： A liquid crystal display device includes: an array substrate; a counter substrate facing the array substrate; and a liquid crystal layer interposed between the array substrate and the counter substrate, wherein the array substrate includes: a plurality of pixel electrodes arranged in a matrix in a display region; a plurality of gate lines; a plurality of source lines which cross the plurality of gate lines; an insulating layer provided between the plurality of gate lines and the plurality of source lines; a plurality of switching elements respectively connected to respective ones of the plurality of the gate lines, the plurality of source lines, and the plurality of pixel electrodes; and a short ring, a plurality of first inspection signal voltage input terminals and a plurality of depletion-type thin film transistors (DTFT) provided in a peripheral region adjacent the display region, and wherein each of the plurality of gate lines and the plurality of source lines is connected to the short ring via respective ones of the plurality of first inspection signal voltage input terminals and respective ones of the plurality of depletion-type thin film transistors, and the plurality of depletion-type thin film transistors is located between the short ring and the plurality of first inspection signal voltage input terminals, the plurality of depletion-type thin film transistors control electrical conduction between the short ring and the plurality of gate lines and source lines.

摘要翻译： 液晶显示装置包括：阵列基板; 面对阵列基板的对置基板; 以及插入在所述阵列基板和所述对置基板之间的液晶层，其中，所述阵列基板包括：在显示区域中以矩阵状排列的多个像素电极; 多条栅极线; 跨越多条栅极线的多条源极线; 绝缘层，设置在所述多个栅极线与所述多个源极线之间; 多个开关元件，分别连接到多个栅极线，多个源极线和多个像素电极中的相应的栅极线， 以及设置在与显示区域相邻的周边区域中的短环，多个第一检查信号电压输入端子和多个耗尽型薄膜晶体管（DTFT），并且其中，多条栅极线和多条栅线 源极线通过多个第一检测信号电压输入端子和多个耗尽型薄膜晶体管中的相应的第一检测信号电压输入端子和相应的多个耗尽型薄膜晶体管中的相应的一个连接到短环，并且多个耗尽型薄膜晶体管位于短路 多个第一检查信号电压输入端子，多个耗尽型薄膜晶体管控制短环与多条栅极线和源极线之间的导通。

公开(公告)号：US4201985A

公开(公告)日：1980-05-06

申请号：US800008

申请日：1977-05-24

申请人： Yasuhiko Inami ,  Tadanori Hishida ,  Kozo Yano ,  Hiroshi Hamada ,  Hiroshi Nakauchi

发明人： Yasuhiko Inami ,  Tadanori Hishida ,  Kozo Yano ,  Hiroshi Hamada ,  Hiroshi Nakauchi

IPC分类号： G09F9/30 ,  G02F1/163 ,  G09G3/16 ,  G09G3/19 ,  G09F9/32

CPC分类号： G09G3/16

摘要： A driving circuit is provided for an electro-optical display which includes an electrochromic material and a predetermined number of display segments, various combinations of display segments defining different desired display patterns. The electrochromic phenomenon is developed within the electro-optical display upon a flow of current supplied through the display segments. The driving circuit is constructed so as to supply a predetermined amount of the flow of current to the display segments during variations of the light absorption properties.

摘要翻译： 为电光显示器提供驱动电路，其包括电致变色材料和预定数量的显示段，定义不同所需显示图案的显示段的各种组合。 在通过显示段供应的电流流动下，在电光显示器内形成电致变色现象。 驱动电路被构造成在光吸收特性的变化期间向显示部分提供预定量的电流。

公开(公告)号：US06864940B2

公开(公告)日：2005-03-08

申请号：US10653904

申请日：2003-09-04

申请人： Yoshinori Shimada ,  Tadanori Hishida

发明人： Yoshinori Shimada ,  Tadanori Hishida

IPC分类号： G02F1/1335 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36

CPC分类号： G02F1/133514 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688

摘要： A method of driving an LCD is provided, where adjacent bus lines are short-circuited during LCD driving operations. In certain example embodiments, an inverse driving technique is used to invert the polarity of a video signal at every one row for instance. In certain example embodiments, short-circuited adjacent data lines (source lines) are in communication with pixels of the same color.

摘要翻译： 提供一种驱动LCD的方法，其中相邻的总线在LCD驱动操作期间短路。 在某些示例性实施例中，使用反向驱动技术来反转例如每一行的视频信号的极性。 在某些示例性实施例中，短路的相邻数据线（源极线）与相同颜色的像素通信。

公开(公告)号：US06628356B2

公开(公告)日：2003-09-30

申请号：US09759374

申请日：2001-01-16

申请人： Yoshinori Shimada ,  Tadanori Hishida

发明人： Yoshinori Shimada ,  Tadanori Hishida

IPC分类号： G02F11335

CPC分类号： G02F1/133514 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688

摘要： An inexpensive method of manufacturing an LCD having a low resolution by utilizing a TFT substrate may be provided. In certain embodiments, an LCD having a low resolution is realized in an inexpensive way by using the TFT substrate adapted for a high-definition liquid crystal display apparatus and by combining a new color filter substrate and/or driver ICs suited to a new driving method. In certain embodiments, the array of pixels is divided into a plurality of pixel groups. One or more of the pixel groups may have a number of different pixels therein defined by the equation: n×m×l, where “n” is the number of different colors, “m” is the number of columns (i.e., same as rows) of same colored pixels, and “l” is a natural number.

摘要翻译： 可以提供通过利用TFT基板制造具有低分辨率的LCD的廉价方法。 在某些实施例中，通过使用适用于高分辨率液晶显示装置的TFT基板，并且组合适用于新的驱动方法的新的滤色器基板和/或驱动器IC，以廉价的方式实现了具有低分辨率的LCD 。 在某些实施例中，像素阵列被划分为多个像素组。 像素组中的一个或多个可以具有由下式定义的多个不同像素：nxmxl，其中“n”是不同颜色的数量，“m”是相同数量的列（即，与行相同） 彩色像素，“l”是自然数。

公开(公告)号：US6050827A

公开(公告)日：2000-04-18

申请号：US4661

申请日：1993-01-14

申请人： Sadatoshi Takechi ,  Tadanori Hishida ,  Fumiaki Funada

发明人： Sadatoshi Takechi ,  Tadanori Hishida ,  Fumiaki Funada

IPC分类号： H01L29/78 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/40 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78681 ,  Y10S438/944

摘要： A thin film transistor where source and drain electrodes are film laminates including at least two layers. A first layer film of the laminate, which is formed to a thickness of 10 to 700 .ANG. is in ohmic contact with underlying semiconductor film. A second layer film, formed on the first layer film has a thickness of more than about 2000 .ANG. and is a material having a sufficient adhesion strength even when formed at a temperature which is less than the temperature corresponding to the materials vapor pressure. Further, the materials used for the source and drain electrodes can be formed into thin films by ordinary sputtering or vacuum deposition techniques, low in cost, and readily available. A thin film transistor according to the present invention is formed on a substrate by the steps of: forming a gate electrode on the substrate; oxidizing the gate electrode to form a gate insulating film, the gate electrode and the gate insulating film forming a step; forming a thin film semiconductor on the gate insulating film; forming a first layer film portion of a source and drain electrode film laminate on the thin film semiconductor and in ohmic contact with the thin film semiconductor; and forming a second layer film portion of the source and drain electrode film laminate, the second layer film being an adhesion layer, convering the first layer film, and having a sufficient thickness to provide a continuous film across the step.

摘要翻译： 一种薄膜晶体管，其中源极和漏极是包括至少两个层的薄膜叠层。 形成为10至700厚度的层压体的第一层膜与下面的半导体膜欧姆接触。 形成在第一层膜上的第二层膜具有大于约2000的厚度，并且即使在低于对应于材料蒸气压的温度的温度下形成时，也具有足够的粘合强度的材料。 此外，用于源电极和漏电极的材料可以通过普通溅射或真空沉积技术形成为薄膜，成本低且易于获得。 根据本发明的薄膜晶体管通过以下步骤形成在衬底上：在衬底上形成栅电极; 氧化栅电极以形成栅极绝缘膜，栅电极和栅绝缘膜形成步骤; 在栅极绝缘膜上形成薄膜半导体; 在所述薄膜半导体上形成源极和漏极电极膜层叠体的第一层膜部分，并与所述薄膜半导体欧姆接触; 以及形成所述源极和漏极电极膜层压体的第二层膜部分，所述第二层膜是粘合层，使所述第一层膜会聚，并且具有足够的厚度以在所述台阶上提供连续的膜。

公开(公告)号：US5831708A

公开(公告)日：1998-11-03

申请号：US705759

申请日：1996-08-30

申请人： Youichi Hiraishi ,  Yasunobu Tagusa ,  Tadanori Hishida

发明人： Youichi Hiraishi ,  Yasunobu Tagusa ,  Tadanori Hishida

IPC分类号： G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368

CPC分类号： G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368

摘要： On an active matrix substrate having a TFT in the vicinity of the intersection of a gate line and a source line and a pixel electrode connected to the TFT, an inter-layer insulating film is formed by an acrylic resin, for example, between the pixel electrode and the gate line, source line and TFT. The pixel electrode does not overlap a self gate line, but overlaps a gate line adjacent to the self gate line. At least one of the gate line and the source line has a redundant structure including ring-shaped sections connected in a longitudinal direction so as to provide redundancy as a measure to counter the disconnection of lines.

摘要翻译： 在栅极线和源极线的交叉点附近具有TFT的TFT的有源矩阵基板和与TFT连接的像素电极之间，由丙烯酸树脂形成层间绝缘膜，例如像素 电极和栅极线，源极线和TFT。 像素电极不与自身栅极线重叠，而是与邻近自栅极线的栅极线重叠。 栅极线和源极线中的至少一个具有包括在纵向连接的环形部分的冗余结构，以便提供冗余作为对抗线路断开的措施。

公开(公告)号：US4153344A

公开(公告)日：1979-05-08

申请号：US815262

申请日：1977-07-13

申请人： Hiroshi Hamada ,  Hiroshi Nakauchi ,  Tadanori Hishida ,  Kozo Yano

发明人： Hiroshi Hamada ,  Hiroshi Nakauchi ,  Tadanori Hishida ,  Kozo Yano

IPC分类号： G09F9/30 ,  G02F1/155 ,  G04G9/12 ,  G02F1/17

CPC分类号： G04G9/12 ,  G02F1/155

摘要： An electro-optical display comprises an electrochromic material and a predetermined number of display segments, each combination of the display segments defining a different desired display pattern. Lead-in electrodes connected to the respective display segments for driving purposes are shaped in such a manner as to have resistance values inversely proportional to the size of the corresponding display segments.

摘要翻译： 电光显示器包括电致变色材料和预定数量的显示段，显示段的每个组合限定不同的所需显示图案。 连接到用于驱动目的的各个显示部分的引入电极被成形为具有与相应的显示段的尺寸成反比的电阻值。

公开(公告)号：US5155564A

公开(公告)日：1992-10-13

申请号：US617921

申请日：1990-11-21

申请人： Tadanori Hishida ,  Hajime Shoji ,  Hiroshi Hamada ,  Hisato Nagatomi

发明人： Tadanori Hishida ,  Hajime Shoji ,  Hiroshi Hamada ,  Hisato Nagatomi

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/768 ,  H01L23/522 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/1368 ,  H01L27/12 ,  G02F2202/103

摘要： A thin-film transistor array has an insulating substrate; a plurality of thin-film transistors disposed in a matrix form on the substrate; a plurality of gate bus lines formed parallel to each other on the substrate, each of the gate bus lines being connected electrically with the gate electrodes of the thin-film transistors in the corresponding row of the matrix; and a plurality of source bus lines formed perpendicular to the gate bus lines on the substrate, each of the source bus lines being connected electrically with the source electrodes of the thin-film transistors in the corresponding column of the matrix; wherein at the intersections of the gate bus lines and the source bus lines, there is disposed a layered structure between the gate bus line and the source bus line, having successively a gate insulating film, a first semiconductor film, a protective insulating film, and a second semiconductor film which is connected electrically with the source intersections, wherein the width of the protective insulating film in the direction in which the gate bus line extends is equal to or greater than that of the second semiconductor film in that direction.

摘要翻译： 薄膜晶体管阵列具有绝缘基板; 在基板上以矩阵形式设置的多个薄膜晶体管; 在基板上彼此平行地形成的多个栅极总线，每个栅极总线与矩阵的相应行中的薄膜晶体管的栅电极电连接; 以及与基板上的栅极总线垂直形成的多个源极总线，每个源极总线与矩阵的相应列中的薄膜晶体管的源电极电连接; 其特征在于，在栅极总线和源极总线的交点处，在栅极总线与源极总线之间配置有分层结构，具有栅极绝缘膜，第一半导体膜，保护绝缘膜和 与源极交叉点电连接的第二半导体膜，其中栅极总线延伸的方向上的保护绝缘膜的宽度等于或大于在该方向上的第二半导体膜的宽度。

公开(公告)号：US4396253A

公开(公告)日：1983-08-02

申请号：US218418

申请日：1980-12-19

申请人： Hiroshi Kuwagaki ,  Hiroshi Hamada ,  Tadanori Hishida ,  Tomio Wada

发明人： Hiroshi Kuwagaki ,  Hiroshi Hamada ,  Tadanori Hishida ,  Tomio Wada

IPC分类号： G02F1/15 ,  G02F1/153 ,  G02F1/17

CPC分类号： G02F1/1533 ,  G02F1/15 ,  G02F2001/1517

摘要： An electro-chromic display device comprises an electro-chromic material and an electrolyte between a display electrode formed by a combination of a plurality of segments, and counter electrode disposed opposite thereto, and undergoes a reversible reaction for developing or erasing a color upon application of voltage or reverse polarity voltage. The counter electrode comprises a molded product obtained by molding under pressure a mixture of the powders of a solid oxidation-reduction type active material and an electrically conductive material.

摘要翻译： 电铬显示装置包括电色材料和在由多个片段的组合形成的显示电极之间的电解质和与其相对设置的对电极，并且在施加了颜色的情况下经历用于显影或擦除颜色的可逆反应 电压或反极性电压。 对电极包括通过在压力下模制固体氧化还原型活性材料的粉末和导电材料的混合物而获得的模制产品。