IMAGING DEVICE
    2.
    发明申请
    IMAGING DEVICE 审中-公开
    成像装置

    公开(公告)号:US20090144354A1

    公开(公告)日:2009-06-04

    申请号:US12324225

    申请日:2008-11-26

    IPC分类号: G06G7/16

    摘要: An imaging device that improves properties for multiplying signal charges. The imaging device includes an accumulation section which accumulates signal charges. A transfer section transfers the signal charges accumulated in the accumulation section. A multiplier section increases the signal charges accumulated in the accumulation section. The transfer section includes a first insulating member arranged on a substrate and a first electrode arranged on the first insulating member. The multiplier section includes a second insulating member arranged on the substrate and a second electrode arranged on the second insulating member. The second insulating member has a thickness which is greater than that of the first insulating member.

    摘要翻译: 一种成像装置,可改善乘法信号电荷的特性。 成像装置包括累积信号电荷的累积部。 传送部分传送累积部分中积累的信号电荷。 乘法器部分增加累积部分中积累的信号电荷。 转印部分包括布置在基底上的第一绝缘构件和布置在第一绝缘构件上的第一电极。 乘法器部分包括布置在基板上的第二绝缘构件和布置在第二绝缘构件上的第二电极。 第二绝缘构件的厚度大于第一绝缘构件的厚度。

    Image sensor and sensor unit
    4.
    发明授权
    Image sensor and sensor unit 有权
    图像传感器和传感器单元

    公开(公告)号:US07952121B2

    公开(公告)日:2011-05-31

    申请号:US12197515

    申请日:2008-08-25

    IPC分类号: H01L31/00

    摘要: An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

    摘要翻译: 图像传感器包括用于存储和传送信号电荷的电荷存储部分,用于形成存储电荷存储部分中的信号电荷的电场的第一电极,用于增加存储在电荷存储部分中的信号电荷的电荷增加部分,以及 第二电极,用于形成增加电荷增加部分中的信号电荷的另一电场,其中可存储在电荷存储部分中的信号电荷的量不小于可存储在电荷增加部分中的信号电荷的量。

    IMAGE SENSOR AND METHOD OF MANUFACTURING IMAGE SENSOR
    5.
    发明申请
    IMAGE SENSOR AND METHOD OF MANUFACTURING IMAGE SENSOR 审中-公开
    图像传感器和图像传感器的制造方法

    公开(公告)号:US20090316032A1

    公开(公告)日:2009-12-24

    申请号:US12479325

    申请日:2009-06-05

    IPC分类号: H04N5/335 H01L21/28

    摘要: An image sensor includes an increase portion for impact-ionizing and increasing signal charges, a charge increasing electrode for applying a voltage increasing the signal charges to the increase portion and an insulating film provided between the charge increasing electrode and the increase portion, wherein the insulating film includes a first insulating film made of a thermal oxide film and a second insulating film made of an oxide film, formed on the first insulating film.

    摘要翻译: 图像传感器包括用于冲击电离和增加信号电荷的增加部分,用于将增加信号电荷的电压施加到增加部分的电荷增加电极和设置在电荷增加电极与增加部分之间的绝缘膜,其中绝缘 膜包括由第一绝缘膜形成的由热氧化膜制成的第一绝缘膜和由氧化膜制成的第二绝缘膜。

    IMAGE SENSOR
    6.
    发明申请
    IMAGE SENSOR 审中-公开
    图像传感器

    公开(公告)号:US20100013975A1

    公开(公告)日:2010-01-21

    申请号:US12501867

    申请日:2009-07-13

    IPC分类号: H04N5/335

    摘要: This image sensor includes a charge transfer region transferring signal charge, a transfer electrode formed on the surface of the charge transfer region through a first insulating film, an increasing portion provided on the charge transfer region for increasing the signal charge and a transistor, provided on a region other than the charge transfer region, having a second insulating film smaller in thickness than the first insulating film.

    摘要翻译: 该图像传感器包括传送信号电荷的电荷转移区域,通过第一绝缘膜形成在电荷转移区域的表面上的转移电极,设置在用于增加信号电荷的电荷转移区域上的增加部分和设置在 除了电荷转移区域之外的区域,具有比第一绝缘膜小的厚度的第二绝缘膜。

    IMAGE SENSOR
    7.
    发明申请
    IMAGE SENSOR 审中-公开
    图像传感器

    公开(公告)号:US20090057734A1

    公开(公告)日:2009-03-05

    申请号:US12201995

    申请日:2008-08-29

    IPC分类号: H01L27/146

    摘要: An image sensor includes a photoelectric conversion portion generating signal charges, a first electrode for forming an electric field transferring the signal charges generated by the photoelectric conversion portion, formed to be adjacent to the photoelectric conversion portion; and a second electrode for forming an electric field transferring the signal charges, provided on a side opposite to the photoelectric conversion portion with respect to the first electrode and formed to partially extend on the first electrode.

    摘要翻译: 图像传感器包括产生信号电荷的光电转换部分,形成与光电转换部分相邻形成的用于形成由光电转换部产生的信号电荷的电场的第一电极; 以及第二电极,用于形成传递信号电荷的电场,所述电场设置在与所述光电转换部相对于所述第一电极相反的一侧,并且形成为在所述第一电极上部分延伸。

    IMAGE SENSOR AND SENSOR UNIT
    8.
    发明申请
    IMAGE SENSOR AND SENSOR UNIT 有权
    图像传感器和传感器单元

    公开(公告)号:US20090057724A1

    公开(公告)日:2009-03-05

    申请号:US12197515

    申请日:2008-08-25

    IPC分类号: H01L31/00

    摘要: An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

    摘要翻译: 图像传感器包括用于存储和传送信号电荷的电荷存储部分,用于形成存储电荷存储部分中的信号电荷的电场的第一电极,用于增加存储在电荷存储部分中的信号电荷的电荷增加部分,以及 第二电极,用于形成增加电荷增加部分中的信号电荷的另一电场,其中可存储在电荷存储部分中的信号电荷的量不小于可存储在电荷增加部分中的信号电荷的量。

    IMAGE SENSOR AND CMOS IMAGE SENSOR
    9.
    发明申请
    IMAGE SENSOR AND CMOS IMAGE SENSOR 审中-公开
    图像传感器和CMOS图像传感器

    公开(公告)号:US20090315086A1

    公开(公告)日:2009-12-24

    申请号:US12486495

    申请日:2009-06-17

    IPC分类号: H01L31/112 H01L31/101

    CPC分类号: H01L27/14603 H01L27/14609

    摘要: An image sensor includes a first electrode for applying a voltage to a charge storage portion, a second electrode for applying a voltage to a charge increasing portion, a third electrode provided between the first electrode and the second electrode and an impurity region of a first conductive type for forming a path through which the signal charges are transferred, wherein an impurity concentration of a region of the impurity region corresponding to a portion located under the second electrode is higher than an impurity concentration of a region of the impurity region corresponding to a portion located under the third electrode.

    摘要翻译: 图像传感器包括用于向电荷存储部分施加电压的第一电极,用于向电荷增加部分施加电压的第二电极,设置在第一电极和第二电极之间的第三电极和第一导电的杂质区域 用于形成传送信号电荷的路径的类型,其中对应于位于第二电极下方的部分的杂质区域的杂质浓度高于对应于部分的杂质区域的杂质浓度 位于第三电极下。

    Image Sensor
    10.
    发明申请
    Image Sensor 审中-公开
    图像传感器

    公开(公告)号:US20090134438A1

    公开(公告)日:2009-05-28

    申请号:US12276648

    申请日:2008-11-24

    IPC分类号: H01L27/146

    CPC分类号: H01L27/14643 H01L27/14806

    摘要: A CMOS image sensor includes an impurity region provided under at least the first electrode, the second electrode and the third electrode for forming a path through which the signal charges transfer, wherein the impurity concentration of a region of the impurity region corresponding to a portion located under the first electrode is higher than the impurity concentration of a region of the impurity region corresponding to each of portions located under at least the second electrode and the third electrode.

    摘要翻译: CMOS图像传感器包括至少设置在第一电极,第二电极和第三电极之下的杂质区域,用于形成信号电荷转移的路径,其中杂质区域的杂质浓度对应于位于 第一电极下面的杂质浓度高于对应于位于至少第二电极和第三电极下方的各部分的杂质区域的杂质浓度。