公开(公告)号：US20070187760A1

公开(公告)日：2007-08-16

申请号：US11701343

申请日：2007-02-01

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

摘要翻译： 薄膜晶体管包括基板和形成在基板上并在其间形成间隙的一对源/漏电极（即源电极和漏电极）。 提供一对低电阻导电薄膜，使得每个涂覆源极/漏极之一的至少一部分。 低电阻导电薄膜在它们之间限定了间隙。 在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层，并且沿着限定在低电阻导电薄膜之间的间隙延伸以作为沟道起作用。 氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

公开(公告)号：US07981734B2

公开(公告)日：2011-07-19

申请号：US12499559

申请日：2009-07-08

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L21/302

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

摘要翻译： 薄膜晶体管的制造方法包括在基板上形成一对源极/漏极，使得源极/漏极在其间限定间隙; 在源/漏电极上形成限定它们之间的间隙的低电阻导电薄膜; 以及在低电阻导电薄膜的上表面和限定在低电阻导电薄膜之间的间隙中形成氧化物半导体薄膜层，使得氧化物半导体薄膜层用作沟道。 蚀刻低电阻导电薄膜和氧化物半导体薄膜层，使得电阻导电薄膜的侧表面和氧化物半导体薄膜层的相应侧表面在沟道的沟道宽度方向上彼此重合。 栅电极安装在氧化物半导体薄膜层上。

公开(公告)号：US20090269881A1

公开(公告)日：2009-10-29

申请号：US12499559

申请日：2009-07-08

申请人： Mamoru FURUTA ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru FURUTA ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

摘要翻译： 薄膜晶体管的制造方法包括在基板上形成一对源极/漏极，使得源极/漏极在其间限定间隙; 在源/漏电极上形成限定它们之间的间隙的低电阻导电薄膜; 以及在低电阻导电薄膜的上表面和限定在低电阻导电薄膜之间的间隙中形成氧化物半导体薄膜层，使得氧化物半导体薄膜层用作沟道。 蚀刻低电阻导电薄膜和氧化物半导体薄膜层，使得电阻导电薄膜的侧表面和氧化物半导体薄膜层的相应侧表面在沟道的沟道宽度方向上彼此重合。 栅电极安装在氧化物半导体薄膜层上。

公开(公告)号：US07576394B2

公开(公告)日：2009-08-18

申请号：US11701343

申请日：2007-02-01

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L31/0392

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

摘要翻译： 薄膜晶体管包括基板和形成在基板上并在其间形成间隙的一对源/漏电极（即源电极和漏电极）。 提供一对低电阻导电薄膜，使得每个涂覆源极/漏极之一的至少一部分。 低电阻导电薄膜在它们之间限定了间隙。 在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层，并且沿着限定在低电阻导电薄膜之间的间隙延伸以作为沟道起作用。 氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

公开(公告)号：US07385224B2

公开(公告)日：2008-06-10

申请号：US11219171

申请日：2005-09-01

申请人： Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida ,  Ikuhiro Yamaguchi

发明人： Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida ,  Ikuhiro Yamaguchi

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618

摘要： A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).

摘要翻译： 本发明的薄膜晶体管包括半导体薄膜（8）; 形成在半导体薄膜（8）的一个表面上的栅极绝缘膜（7）; 通过栅极绝缘膜形成为与半导体薄膜（8）相对的栅电极（6）; 电连接到半导体薄膜（8）的源电极（15）和漏电极（16）。 源区; 漏区; 和通道区域。 薄膜晶体管还包括形成在至少对应于半导体薄膜（8）的源极区域和漏极区域的周边部分上的绝缘膜（9），并且具有接触孔（10,11） 源极区域和漏极区域中的至少一部分被暴露，其中源电极（15）和漏电极（16）通过接触孔（10,11）连接到半导体薄膜（8）。

公开(公告)号：US20060043447A1

公开(公告)日：2006-03-02

申请号：US11219171

申请日：2005-09-01

申请人： Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida ,  Ikuhiro Yamaguchi

发明人： Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida ,  Ikuhiro Yamaguchi

IPC分类号： H01L29/94

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618

摘要： A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).

摘要翻译： 本发明的薄膜晶体管包括半导体薄膜（8）; 形成在半导体薄膜（8）的一个表面上的栅极绝缘膜（7）; 通过栅极绝缘膜形成为与半导体薄膜（8）相对的栅电极（6）; 电连接到半导体薄膜（8）的源电极（15）和漏电极（16）。 源区; 漏区; 和通道区域。 薄膜晶体管还包括形成在至少对应于半导体薄膜（8）的源极区域和漏极区域的周边部分上的绝缘膜（9），并且具有接触孔（10,11） 源极区域和漏极区域中的至少一部分被暴露，其中源电极（15）和漏电极（16）通过接触孔（10,11）连接到半导体薄膜（8）。

公开(公告)号：US08427737B2

公开(公告)日：2013-04-23

申请号：US13187333

申请日：2011-07-20

申请人： Motohiko Yoshida ,  Makoto Sasaki

发明人： Motohiko Yoshida ,  Makoto Sasaki

IPC分类号： G02B26/00 ,  G09G3/34

CPC分类号： G02F1/167

摘要： An electrophoretic display device includes: a first substrate and a second substrate which are arranged opposite to each other at a predetermined interval; a plurality of pixel electrodes which are aligned on the first substrate; a wiring which is arranged between adjacent pixel electrodes among the pixel electrodes; an opposite electrode which is provided on the second substrate; a partition wall which is provided above the wiring of the first substrate to stand toward the second substrate so as to surround the pixel electrodes; and a solvent which fills up a space surrounded by the partition wall and in which a plurality of particles are dispersed. The partition wall has a rectangular shape including four sides, at least one of which partially has an expanded-width portion wider than other portion of the at least one of the four sides.

摘要翻译： 电泳显示装置包括：以预定间隔彼此相对布置的第一基板和第二基板; 在第一基板上排列的多个像素电极; 布置在像素电极之间的相邻像素电极之间的布线; 设置在所述第二基板上的相对电极; 分隔壁，设置在第一基板的布线的上方以朝向第二基板以围绕像素电极; 以及填充由分隔壁包围的空间并且分散有多个颗粒的溶剂。 分隔壁具有包括四个侧面的矩形形状，其中至少一个部分地具有比四个侧面中的至少一个的其它部分更宽的扩宽部分。

公开(公告)号：US4124327A

公开(公告)日：1978-11-07

申请号：US782786

申请日：1977-03-30

申请人： Motohiko Yoshida ,  Nobuyuki Katagiri

发明人： Motohiko Yoshida ,  Nobuyuki Katagiri

IPC分类号： B23Q5/04 ,  B23Q1/00 ,  B23Q11/00 ,  B23Q5/22 ,  G05G3/00

CPC分类号： B23Q1/0009 ,  B23Q11/0035 ,  Y10T408/65 ,  Y10T408/72 ,  Y10T409/309352 ,  Y10T74/2132

摘要： The present invention relates to an improvement in a mechanism wherein a flywheel which is idly mounted on a spindle of a machining center is easily and speedily connected with or detached from the spindle by a clutch which is fitted on the spindle adjacent to the flywheel for promoting the cutting efficiency by providing spindle inertia of two kinds; one kind for heavy cutting and another for light cutting respectively.

摘要翻译： 本发明涉及一种机构的改进，其中通过安装在与飞轮相邻的心轴上的离合器，其中空转地安装在加工中心的心轴上的飞轮容易且快速地与心轴连接或分离，从而促进 提供两种主轴惯性的切割效率; 一种重型切割，另一种用于轻切割。

公开(公告)号：US07795621B2

公开(公告)日：2010-09-14

申请号：US11356407

申请日：2006-02-16

申请人： Ikuhiro Yamaguchi ,  Manabu Takei ,  Motohiko Yoshida

发明人： Ikuhiro Yamaguchi ,  Manabu Takei ,  Motohiko Yoshida

IPC分类号： H01L29/10 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124

摘要： A thin film transistor panel including: a transparent substrate; scanning lines made of a light blocking electroconductive material to be formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines and made of a light blocking electroconductive material; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data lines, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover at least a part of the gate electrode of each of the thin film transistors.

摘要翻译： 一种薄膜晶体管板，包括：透明基板; 在透明基板上形成由阻光导电材料构成的扫描线; 在透明基板上形成垂直于扫描线并由阻光导电材料制成的数据线; 薄膜晶体管，每个薄膜晶体管均设有连接到扫描线之一的透明栅电极，连接到数据线之一的透明漏电极，透明源电极和透明半导体薄膜; 以及连接到薄膜晶体管的透明像素电极，其中每个像素电极形成为覆盖每个薄膜晶体管的栅电极的至少一部分。

公开(公告)号：US20060192204A1

公开(公告)日：2006-08-31

申请号：US11356407

申请日：2006-02-16

申请人： Ikuhiro Yamaguchi ,  Manabu Takei ,  Motohiko Yoshida

发明人： Ikuhiro Yamaguchi ,  Manabu Takei ,  Motohiko Yoshida

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124

摘要： A thin film transistor panel including: a transparent substrate; scanning lines made of a light blocking electroconductive material to be formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines and made of a light blocking electroconductive material; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data lines, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover at least a part of the gate electrode of each of the thin film transistors.

摘要翻译： 一种薄膜晶体管板，包括：透明基板; 在透明基板上形成由阻光导电材料构成的扫描线; 在透明基板上形成垂直于扫描线并由阻光导电材料制成的数据线; 薄膜晶体管，每个薄膜晶体管均设有连接到扫描线之一的透明栅电极，连接到数据线之一的透明漏电极，透明源电极和透明半导体薄膜; 以及连接到薄膜晶体管的透明像素电极，其中每个像素电极形成为覆盖每个薄膜晶体管的栅电极的至少一部分。