公开(公告)号：US20090269881A1

公开(公告)日：2009-10-29

申请号：US12499559

申请日：2009-07-08

申请人： Mamoru FURUTA ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru FURUTA ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

摘要翻译： 薄膜晶体管的制造方法包括在基板上形成一对源极/漏极，使得源极/漏极在其间限定间隙; 在源/漏电极上形成限定它们之间的间隙的低电阻导电薄膜; 以及在低电阻导电薄膜的上表面和限定在低电阻导电薄膜之间的间隙中形成氧化物半导体薄膜层，使得氧化物半导体薄膜层用作沟道。 蚀刻低电阻导电薄膜和氧化物半导体薄膜层，使得电阻导电薄膜的侧表面和氧化物半导体薄膜层的相应侧表面在沟道的沟道宽度方向上彼此重合。 栅电极安装在氧化物半导体薄膜层上。

公开(公告)号：US07576394B2

公开(公告)日：2009-08-18

申请号：US11701343

申请日：2007-02-01

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L31/0392

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

摘要翻译： 薄膜晶体管包括基板和形成在基板上并在其间形成间隙的一对源/漏电极（即源电极和漏电极）。 提供一对低电阻导电薄膜，使得每个涂覆源极/漏极之一的至少一部分。 低电阻导电薄膜在它们之间限定了间隙。 在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层，并且沿着限定在低电阻导电薄膜之间的间隙延伸以作为沟道起作用。 氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

公开(公告)号：US20060043447A1

公开(公告)日：2006-03-02

申请号：US11219171

申请日：2005-09-01

申请人： Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida ,  Ikuhiro Yamaguchi

发明人： Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida ,  Ikuhiro Yamaguchi

IPC分类号： H01L29/94

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618

摘要： A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).

摘要翻译： 本发明的薄膜晶体管包括半导体薄膜（8）; 形成在半导体薄膜（8）的一个表面上的栅极绝缘膜（7）; 通过栅极绝缘膜形成为与半导体薄膜（8）相对的栅电极（6）; 电连接到半导体薄膜（8）的源电极（15）和漏电极（16）。 源区; 漏区; 和通道区域。 薄膜晶体管还包括形成在至少对应于半导体薄膜（8）的源极区域和漏极区域的周边部分上的绝缘膜（9），并且具有接触孔（10,11） 源极区域和漏极区域中的至少一部分被暴露，其中源电极（15）和漏电极（16）通过接触孔（10,11）连接到半导体薄膜（8）。

公开(公告)号：US07795621B2

公开(公告)日：2010-09-14

申请号：US11356407

申请日：2006-02-16

申请人： Ikuhiro Yamaguchi ,  Manabu Takei ,  Motohiko Yoshida

发明人： Ikuhiro Yamaguchi ,  Manabu Takei ,  Motohiko Yoshida

IPC分类号： H01L29/10 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124

摘要： A thin film transistor panel including: a transparent substrate; scanning lines made of a light blocking electroconductive material to be formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines and made of a light blocking electroconductive material; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data lines, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover at least a part of the gate electrode of each of the thin film transistors.

摘要翻译： 一种薄膜晶体管板，包括：透明基板; 在透明基板上形成由阻光导电材料构成的扫描线; 在透明基板上形成垂直于扫描线并由阻光导电材料制成的数据线; 薄膜晶体管，每个薄膜晶体管均设有连接到扫描线之一的透明栅电极，连接到数据线之一的透明漏电极，透明源电极和透明半导体薄膜; 以及连接到薄膜晶体管的透明像素电极，其中每个像素电极形成为覆盖每个薄膜晶体管的栅电极的至少一部分。

公开(公告)号：US20070187760A1

公开(公告)日：2007-08-16

申请号：US11701343

申请日：2007-02-01

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

摘要翻译： 薄膜晶体管包括基板和形成在基板上并在其间形成间隙的一对源/漏电极（即源电极和漏电极）。 提供一对低电阻导电薄膜，使得每个涂覆源极/漏极之一的至少一部分。 低电阻导电薄膜在它们之间限定了间隙。 在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层，并且沿着限定在低电阻导电薄膜之间的间隙延伸以作为沟道起作用。 氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

公开(公告)号：US20060192204A1

公开(公告)日：2006-08-31

申请号：US11356407

申请日：2006-02-16

申请人： Ikuhiro Yamaguchi ,  Manabu Takei ,  Motohiko Yoshida

发明人： Ikuhiro Yamaguchi ,  Manabu Takei ,  Motohiko Yoshida

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124

摘要： A thin film transistor panel including: a transparent substrate; scanning lines made of a light blocking electroconductive material to be formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines and made of a light blocking electroconductive material; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data lines, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover at least a part of the gate electrode of each of the thin film transistors.

摘要翻译： 一种薄膜晶体管板，包括：透明基板; 在透明基板上形成由阻光导电材料构成的扫描线; 在透明基板上形成垂直于扫描线并由阻光导电材料制成的数据线; 薄膜晶体管，每个薄膜晶体管均设有连接到扫描线之一的透明栅电极，连接到数据线之一的透明漏电极，透明源电极和透明半导体薄膜; 以及连接到薄膜晶体管的透明像素电极，其中每个像素电极形成为覆盖每个薄膜晶体管的栅电极的至少一部分。

公开(公告)号：US07981734B2

公开(公告)日：2011-07-19

申请号：US12499559

申请日：2009-07-08

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L21/302

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

摘要翻译： 薄膜晶体管的制造方法包括在基板上形成一对源极/漏极，使得源极/漏极在其间限定间隙; 在源/漏电极上形成限定它们之间的间隙的低电阻导电薄膜; 以及在低电阻导电薄膜的上表面和限定在低电阻导电薄膜之间的间隙中形成氧化物半导体薄膜层，使得氧化物半导体薄膜层用作沟道。 蚀刻低电阻导电薄膜和氧化物半导体薄膜层，使得电阻导电薄膜的侧表面和氧化物半导体薄膜层的相应侧表面在沟道的沟道宽度方向上彼此重合。 栅电极安装在氧化物半导体薄膜层上。

公开(公告)号：US20090242887A1

公开(公告)日：2009-10-01

申请号：US12413318

申请日：2009-03-27

申请人： Tetsuya YAMAMOTO ,  Naoki YAMAMOTO ,  Hisao MAKINO ,  Akira UJIHARA ,  Yoshinori HIRASHIMA ,  Hiroaki IWAOKA ,  Hisashi AOKI ,  Hitoshi HOKARI ,  Motohiko YOSHIDA

发明人： Tetsuya YAMAMOTO ,  Naoki YAMAMOTO ,  Hisao MAKINO ,  Akira UJIHARA ,  Yoshinori HIRASHIMA ,  Hiroaki IWAOKA ,  Hisashi AOKI ,  Hitoshi HOKARI ,  Motohiko YOSHIDA

IPC分类号： H01L33/00 ,  H01L21/28 ,  C23C14/32

CPC分类号： G02F1/13439 ,  C23C14/086 ,  C23C14/34 ,  C23C14/3485 ,  H01L51/5215

摘要： A display substrate is disclosed comprising: a supporting substrate; an organic resin layer formed on the supporting substrate; and a transparent electrode formed on the organic resin layer, wherein the transparent electrode includes: a first layer containing a zinc oxide and formed in close contact with the organic resin layer; and a second layer containing a zinc oxide and which has a thickness thicker than a thickness of the first layer and is formed on the first layer, wherein the first layer is deposited by either one of a DC sputtering and a DC magnetron sputtering, and the second layer is deposited by any one of a radio frequency sputtering, a radio frequency magnetron sputtering, a radio frequency superimposing a DC sputtering, and a radio frequency superimposing a DC magnetron sputtering, and the display substrate is available, for example, as the substrate having a transparent electrode for counter electrode of liquid crystal display device.

摘要翻译： 公开了一种显示基板，包括：支撑基板; 形成在所述支撑基板上的有机树脂层; 和形成在有机树脂层上的透明电极，其中透明电极包括：含有氧化锌并与有机树脂层紧密接触形成的第一层; 和含有氧化锌的第二层，其厚度比第一层的厚度厚，并且形成在第一层上，其中第一层通过DC溅射和DC磁控溅射中的任一种沉积，并且 第二层通过射频溅射，射频磁控溅射，射频叠加DC溅射和叠加DC磁控溅射的射频中的任一种沉积，并且显示基板可用作例如基板 具有用于液晶显示装置的对电极的透明电极。

公开(公告)号：US4677600A

公开(公告)日：1987-06-30

申请号：US807836

申请日：1985-12-11

申请人： Motohiko Yoshida

发明人： Motohiko Yoshida

IPC分类号： H03K17/965 ,  G06F3/02 ,  H01H13/00 ,  H01H13/70 ,  H03K17/967 ,  G01S3/80

CPC分类号： H03K17/967 ,  H01H13/70 ,  H01H2239/054 ,  Y10S367/907

摘要： A keyboard apparatus has a plurality of elastically deformable elastic members disposed on a board in a predetermined positional relationship, a plurality of push members each disposed above each of said plurality of elastic members and adapted to push said elastic member to cause the same to elastically deform and produce an acoustic signal. At least three pickups are disposed on the board at different positions for sensing arrival of the acoustic signal. A detecting circuit determines for detecting the keyed position in response to the output from each of the pickups based upon the differences between arrival times of the acoustic signal at these pickups.

摘要翻译： 键盘装置具有以预定的位置关系设置在板上的多个可弹性变形的弹性构件，多个推动构件，每个推动构件设置在所述多个弹性构件的每一个上方，并且适于推动所述弹性构件以使其弹性变形 并产生声信号。 在板上的至少三个拾取器设置在不同的位置，用于感测声信号的到达。 检测电路基于在这些拾取器处的声信号的到达时间之间的差异来确定响应于每个拾取器的输出来检测键控位置。

公开(公告)号：US4240194A

公开(公告)日：1980-12-23

申请号：US20945

申请日：1979-03-15

申请人： Sumiaki Inami ,  Haruhiko Koike ,  Motohiko Yoshida

发明人： Sumiaki Inami ,  Haruhiko Koike ,  Motohiko Yoshida

IPC分类号： B23Q3/155 ,  B23Q3/157

CPC分类号： B23Q3/15526 ,  Y10T483/175 ,  Y10T483/1764 ,  Y10T483/1845 ,  Y10T483/1882

摘要： An automatic tooling machine includes a spindle carrier having a spindle for supporting a machining tool. The spindle carrier includes a tool drum mounting device for rotatably supporting a tool drum having plural machining tools thereon. A device is provided for transferring a selected machining tool between the tool drum supported on the tool drum mounting device and the spindle. A drum storage rack is fixedly positioned separate from the spindle carrier and extends in a longitudinal direction. The rack includes a plurality of drum support members for storing a plurality of tool drums. A carriage track is integral with the spindle carrier. A device is provided for selectively moving the spindle carrier to a position such that the carriage track is positioned adjacent and aligned with a selected of the drum support members. A carriage is provided for moving the tool drum of the selected drum support member along the carriage track between the tool drum mounting device and the selected drum support member. A servo-motor and worm gear arrangement is provided for rotating the tool drum on the tool drum mounting device.

摘要翻译： 一种自动加工机包括具有用于支撑加工工具的主轴的主轴托架。 主轴托架包括工具滚筒安装装置，用于可旋转地支撑在其上具有多个加工工具的工具滚筒。 提供了一种装置，用于将所选择的加工工具传送到支撑在工具鼓安装装置上的工具鼓和主轴之间。 鼓存储架固定地定位成与主轴托架分离并沿纵向方向延伸。 机架包括用于存储多个工具鼓的多个鼓支撑构件。 托架轨道与主轴托架是一体的。 提供一种装置，用于选择性地将主轴托架移动到一个位置，使得托架履带定位成与选定的鼓支撑件相邻并对齐。 提供了一种滑架，用于沿着工具滚筒安装装置和所选择的滚筒支撑构件之间的滑架轨道移动所选择的滚筒支撑构件的工具滚筒。 提供伺服电机和蜗轮装置用于使工具滚筒在工具滚筒安装装置上旋转。