公开(公告)号：US07526354B2

公开(公告)日：2009-04-28

申请号：US11484484

申请日：2006-07-10

申请人： Manuel Madriaga ,  Junwei Bao ,  Vi Vuong

发明人： Manuel Madriaga ,  Junwei Bao ,  Vi Vuong

IPC分类号： G06F19/00

CPC分类号： G01B11/14 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/95615 ,  G03F7/70625

摘要： A system for examining a patterned structure formed on a semiconductor wafer using an optical metrology model includes a first fabrication cluster, a metrology cluster, an optical metrology model optimizer, and a real time profile estimator. The first fabrication cluster configured to process a wafer, the wafer having a first patterned and a first unpatterned structure. The first patterned structure has underlying film thicknesses, critical dimension, and profile. The metrology cluster including one or more optical metrology devices coupled to the first fabrication cluster. The metrology cluster is configured to measure diffraction signals off the first patterned and the first unpatterned structure. The metrology model optimizer is configured to optimize an optical metrology model of the first patterned structure using one or more measured diffraction signals off the first patterned structure and with floating profile parameters, material refraction parameters, and metrology device parameters.

摘要翻译： 使用光学测量模型检查在半导体晶片上形成的图案化结构的系统包括第一制造集群，度量集群，光学计量模型优化器和实时分布估计器。 第一制造集群被配置为处理晶片，晶片具有第一图案化和第一未图案化结构。 第一图案结构具有底层膜厚度，临界尺寸和轮廓。 测量集群包括耦合到第一制造集群的一个或多个光学测量装置。 测量簇被配置为测量离开第一图案和第一未图案化结构的衍射信号。 计量模型优化器被配置为使用离开第一图案化结构的一个或多个测量的衍射信号以及浮动轮廓参数，材料折射参数和度量设备参数来优化第一图案化结构的光学测量模型。

公开(公告)号：US07522295B2

公开(公告)日：2009-04-21

申请号：US11594497

申请日：2006-11-07

申请人： Vi Vuong ,  Junwei Bao ,  Manuel Madriaga

发明人： Vi Vuong ,  Junwei Bao ,  Manuel Madriaga

IPC分类号： G01B11/04

CPC分类号： G01N21/4788 ,  G01N21/95607 ,  G01N2021/8416 ,  G01N2021/95615

摘要： Structures formed on a semiconductor wafer are consecutively measured by obtaining first and second measured diffraction signals of a first structure and a second structure formed abutting the first structure. The first and second measured diffraction signals were consecutively measured using a polarized reflectometer. The first measured diffraction signal is compared to a first simulated diffraction signal generated using a profile model of the first structure. The profile model has profile parameters that characterize geometries of the first structure. One or more features of the first structure are determined based on the comparison. The second measured diffraction signal is converted to a converted diffraction signal. The converted diffraction signal is compared to the first simulated diffraction signal or a second simulated diffraction signal generated using the same profile model as the first simulated diffraction signal. One or more features of the second structure are determined based on the comparison.

摘要翻译： 通过获得与第一结构邻接形成的第一结构和第二结构的第一和第二测量的衍射信号，连续测量形成在半导体晶片上的结构。 使用偏振反射计连续测量第一和第二测量的衍射信号。 将第一测量的衍射信号与使用第一结构的轮廓模型产生的第一模拟衍射信号进行比较。 轮廓模型具有表征第一结构的几何形状的轮廓参数。 基于比较确定第一结构的一个或多个特征。 第二测量的衍射信号被转换成转换的衍射信号。 将转换的衍射信号与第一模拟衍射信号或使用与第一模拟衍射信号相同的轮廓模型产生的第二模拟衍射信号进行比较。 基于比较来确定第二结构的一个或多个特征。

公开(公告)号：US20080106729A1

公开(公告)日：2008-05-08

申请号：US11594659

申请日：2006-11-07

申请人： Vi Vuong ,  Junwei Bao ,  Manuel Madriaga

发明人： Vi Vuong ,  Junwei Bao ,  Manuel Madriaga

IPC分类号： G01N21/00

CPC分类号： G01N21/4788 ,  G01N21/95607 ,  G01N2021/8416 ,  G01N2021/95615

摘要： Structures formed on a semiconductor wafer are consecutively measured by obtaining first and second measured diffraction signals of a first structure and a second structure formed abutting the first structure. The first and second measured diffraction signals were consecutively measured using an angle-resolved spectroscopic scatterometer. The first measured diffraction signal is compared to a first simulated diffraction signal generated using a profile model of the first structure. The profile model has profile parameters, characterize geometries of the first structure, and an azimuth angle parameter, which define the angle between the plane of incidence beam and direction of periodicity of the first or second structure. One or more features of the first structure are determined based on the comparison. The second measured diffraction signal is compared to a second simulated diffraction signal generated using the same profile model as the first simulated diffraction signal with the azimuth angle parameter having a value that is about 90 degrees different than the value of the azimuth angle parameter used to generate the first simulated diffraction signal. One or more features of the second structure are determined based on the comparison of the second measured diffraction signal to the second simulated diffraction signal.

摘要翻译： 通过获得与第一结构邻接形成的第一结构和第二结构的第一和第二测量的衍射信号，连续测量形成在半导体晶片上的结构。 使用角度分辨光谱散射仪连续测量第一和第二测量的衍射信号。 将第一测量的衍射信号与使用第一结构的轮廓模型产生的第一模拟衍射信号进行比较。 轮廓模型具有轮廓参数，表征第一结构的几何形状和方位角参数，其定义入射光束与第一或第二结构的周期性方向之间的角度。 基于比较确定第一结构的一个或多个特征。 将第二测量的衍射信号与使用与第一模拟衍射信号相同的轮廓模型生成的第二模拟衍射信号进行比较，其中方位角参数具有与用于产生的方位角参数的值不同的约90度的值 第一个模拟衍射信号。 基于第二测量衍射信号与第二模拟衍射信号的比较来确定第二结构的一个或多个特征。

公开(公告)号：US07126700B2

公开(公告)日：2006-10-24

申请号：US10735212

申请日：2003-12-12

申请人： Junwei Bao ,  Vi Vuong ,  Manuel Madriaga ,  Daniel Prager

发明人： Junwei Bao ,  Vi Vuong ,  Manuel Madriaga ,  Daniel Prager

IPC分类号： G01B11/02 ,  G01B11/24

CPC分类号： G01B11/303 ,  G01B11/24 ,  G03F7/70625

摘要： The profile of an integrated circuit structure is determined by obtaining a measured metrology signal and a first simulated metrology signal, which has an associated profile model of the structure defined by a set of profile parameters. When the two signals match within a first termination criterion, at least one profile parameter is selected from the set of profile parameters. A value for the selected profile parameter is determined. A second simulated metrology signal having an associated profile model of the structure defined by a set of profile parameters with at least one profile parameter equal or close to the determined value for the selected profile parameter is obtained. When the measured and the second simulated metrology signals match within a second termination criterion, values for one or more remaining profile parameters are determined from the set of profile parameters associated with the second simulated metrology signal.

摘要翻译： 通过获得测量的测量信号和第一模拟测量信号来确定集成电路结构的轮廓，该测量信号具有由一组轮廓参数定义的结构的相关联的轮廓模型。 当两个信号在第一终止标准中匹配时，从简档参数集中选择至少一个简档参数。 确定所选配置文件参数的值。 获得具有由一组轮廓参数定义的结构的关联轮廓模型的第二模拟计量信号，其中至少一个轮廓参数等于或接近所选轮廓参数的确定值。 当所测量的和第二模拟测量信号在第二终止标准内匹配时，从与第二模拟测量信号相关联的轮廓参数的集合确定一个或多个剩余轮廓参数的值。

公开(公告)号：US07417750B2

公开(公告)日：2008-08-26

申请号：US11594659

申请日：2006-11-07

申请人： Vi Vuong ,  Junwei Bao ,  Manuel Madriaga

发明人： Vi Vuong ,  Junwei Bao ,  Manuel Madriaga

IPC分类号： G01B11/04 ,  G01B15/00 ,  G01N21/88

CPC分类号： G01N21/4788 ,  G01N21/95607 ,  G01N2021/8416 ,  G01N2021/95615

摘要： Structures formed on a semiconductor wafer are consecutively measured by obtaining first and second measured diffraction signals of a first structure and a second structure formed abutting the first structure. The first and second measured diffraction signals were consecutively measured using an angle-resolved spectroscopic scatterometer. The first measured diffraction signal is compared to a first simulated diffraction signal generated using a profile model of the first structure. The profile model has profile parameters, characterize geometries of the first structure, and an azimuth angle parameter, which define the angle between the plane of incidence beam and direction of periodicity of the first or second structure. One or more features of the first structure are determined based on the comparison. The second measured diffraction signal is compared to a second simulated diffraction signal generated using the same profile model as the first simulated diffraction signal with the azimuth angle parameter having a value that is about 90 degrees different than the value of the azimuth angle parameter used to generate the first simulated diffraction signal. One or more features of the second structure are determined based on the comparison of the second measured diffraction signal to the second simulated diffraction signal.

摘要翻译： 通过获得与第一结构邻接形成的第一结构和第二结构的第一和第二测量的衍射信号，连续测量形成在半导体晶片上的结构。 使用角度分辨光谱散射仪连续测量第一和第二测量的衍射信号。 将第一测量的衍射信号与使用第一结构的轮廓模型产生的第一模拟衍射信号进行比较。 轮廓模型具有轮廓参数，表征第一结构的几何形状和方位角参数，其定义入射光束与第一或第二结构的周期性方向之间的角度。 基于比较确定第一结构的一个或多个特征。 将第二测量的衍射信号与使用与第一模拟衍射信号相同的轮廓模型生成的第二模拟衍射信号进行比较，其中方位角参数具有与用于产生的方位角参数的值不同的约90度的值 第一个模拟衍射信号。 基于第二测量衍射信号与第二模拟衍射信号的比较来确定第二结构的一个或多个特征。

公开(公告)号：US20080009081A1

公开(公告)日：2008-01-10

申请号：US11484484

申请日：2006-07-10

申请人： Manuel Madriaga ,  Junwei Bao ,  Vi Vuong

发明人： Manuel Madriaga ,  Junwei Bao ,  Vi Vuong

IPC分类号： H01L21/66 ,  G01R31/26 ,  G01B11/14

CPC分类号： G01B11/14 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/95615 ,  G03F7/70625

摘要： An apparatus to examine a patterned structure formed on a semiconductor wafer using an optical metrology model includes a fabrication system and a metrology processor. The fabrication system includes a fabrication cluster, metrology cluster, metrology model optimizer, and real time profile estimator. The fabrication cluster is configured to process wafers, the wafers having patterned and unpatterned structures. The patterned structures have underlying film thicknesses, critical dimension, and profile. The metrology cluster includes one or more optical metrology devices. The metrology cluster is configured to measure diffraction signals off the patterned and the unpatterned structures. The metrology model optimizer is configured to optimize an optical metrology model of the patterned structure using one or more measured diffraction signals off the patterned structure and with floating profile parameters, material refraction parameters, and metrology device parameters. The real time profile estimator is configured to use the optimized optical metrology model from the metrology model optimizer, the measured diffraction signals off the patterned structure, and a fixed value within the range of values for at least one parameter from amongst the material refraction parameters and the metrology device parameters. The real time profile estimator is configured to create an output comprising underlying film thickness, critical dimension, and profile of the patterned structure. The metrology data processor is configured to receive, process, store, and transmit the fixed value within the range of values for the at least one parameter from amongst the material refraction parameters and the metrology device parameters.

摘要翻译： 使用光学测量模型检查在半导体晶片上形成的图案化结构的装置包括制造系统和计量处理器。 制造系统包括制造集群，计量集群，计量模型优化器和实时轮廓估计器。 制造集群被配置为处理晶片，晶片具有图案化和未图案化的结构。 图案化结构具有下面的膜厚度，临界尺寸和轮廓。 计量集群包括一个或多个光学计量装置。 测量簇被配置成测量图案和未图案结构的衍射信号。 计量模型优化器被配置为使用离开图案化结构的一个或多个测量的衍射信号以及浮动轮廓参数，材料折射参数和度量设备参数来优化图案化结构的光学测量模型。 实时轮廓估计器被配置为使用来自计量模型优化器的优化的光学测量模型，离开图案化结构的测量的衍射信号，以及在材料折射参数中的至少一个参数的值范围内的固定值，以及 测量设备参数。 实时轮廓估计器被配置为创建包括图案化结构的基底膜厚度，临界尺寸和轮廓的输出。 计量数据处理器被配置为从材料折射参数和测量装置参数中的至少一个参数的值的范围内接收，处理，存储和传输固定值。

公开(公告)号：US20050128489A1

公开(公告)日：2005-06-16

申请号：US10735212

申请日：2003-12-12

申请人： Junwei Bao ,  Vi Vuong ,  Manuel Madriaga ,  Daniel Prager

发明人： Junwei Bao ,  Vi Vuong ,  Manuel Madriaga ,  Daniel Prager

IPC分类号： G01B11/24 ,  G01B11/30 ,  G01B15/04 ,  G01B21/20 ,  G01Q80/00 ,  H01L21/66

CPC分类号： G01B11/303 ,  G01B11/24 ,  G03F7/70625

摘要： The profile of an integrated circuit structure is determined by obtaining a measured metrology signal and a first simulated metrology signal, which has an associated profile model of the structure defined by a set of profile parameters. When the two signals match within a first termination criterion, at least one profile parameter is selected from the set of profile parameters. A value for the selected profile parameter is determined. A second simulated metrology signal having an associated profile model of the structure defined by a set of profile parameters with at least one profile parameter equal or close to the determined value for the selected profile parameter is obtained. When the measured and the second simulated metrology signals match within a second termination criterion, values for one or more remaining profile parameters are determined from the set of profile parameters associated with the second simulated metrology signal.

摘要翻译： 通过获得测量的测量信号和第一模拟测量信号来确定集成电路结构的轮廓，该测量信号具有由一组轮廓参数定义的结构的相关联的轮廓模型。 当两个信号在第一终止标准中匹配时，从简档参数集中选择至少一个简档参数。 确定所选配置文件参数的值。 获得具有由一组轮廓参数定义的结构的关联轮廓模型的第二模拟计量信号，其中至少一个轮廓参数等于或接近所选轮廓参数的确定值。 当所测量的和第二模拟测量信号在第二终止标准内匹配时，从与第二模拟测量信号相关联的轮廓参数的集合确定一个或多个剩余轮廓参数的值。

公开(公告)号：US20080106728A1

公开(公告)日：2008-05-08

申请号：US11594497

申请日：2006-11-07

申请人： Vi Vuong ,  Junwei Bao ,  Manuel Madriaga

发明人： Vi Vuong ,  Junwei Bao ,  Manuel Madriaga

IPC分类号： G01N21/00

CPC分类号： G01N21/4788 ,  G01N21/95607 ,  G01N2021/8416 ,  G01N2021/95615

摘要： Structures formed on a semiconductor wafer are consecutively measured by obtaining first and second measured diffraction signals of a first structure and a second structure formed abutting the first structure. The first and second measured diffraction signals were consecutively measured using a polarized reflectometer. The first measured diffraction signal is compared to a first simulated diffraction signal generated using a profile model of the first structure. The profile model has profile parameters that characterize geometries of the first structure. One or more features of the first structure are determined based on the comparison. The second measured diffraction signal is converted to a converted diffraction signal. The converted diffraction signal is compared to the first simulated diffraction signal or a second simulated diffraction signal generated using the same profile model as the first simulated diffraction signal. One or more features of the second structure are determined based on the comparison.

摘要翻译： 通过获得与第一结构邻接形成的第一结构和第二结构的第一和第二测量的衍射信号，连续测量形成在半导体晶片上的结构。 使用偏振反射计连续测量第一和第二测量的衍射信号。 将第一测量的衍射信号与使用第一结构的轮廓模型产生的第一模拟衍射信号进行比较。 轮廓模型具有表征第一结构的几何形状的轮廓参数。 基于比较确定第一结构的一个或多个特征。 第二测量的衍射信号被转换成转换的衍射信号。 将转换的衍射信号与第一模拟衍射信号或使用与第一模拟衍射信号相同的轮廓模型产生的第二模拟衍射信号进行比较。 基于比较来确定第二结构的一个或多个特征。

公开(公告)号：US07588949B2

公开(公告)日：2009-09-15

申请号：US11699837

申请日：2007-01-29

申请人： Vi Vuong ,  Emmanuel Drege ,  Shifang Li ,  Junwei Bao

发明人： Vi Vuong ,  Emmanuel Drege ,  Shifang Li ,  Junwei Bao

IPC分类号： H01L21/00 ,  G06F19/00

CPC分类号： G03F7/70625 ,  G03F7/705

摘要： The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.

摘要翻译： 评估用于测量晶片结构的光学测量模型的优化。 开发了具有度量模型变量的光学测量模型，其包括轮廓模型的轮廓模型参数。 选择计量模型优化的一个或多个目标。 选择要用于评估一个或多个所选目标的一个或多个简档模型参数。 选择要设置为固定值的一个或多个计量模型变量。 一个或多个选定的计量模型变量被设置为固定值。 设置一个或多个所选目标的一个或多个终止标准。 光学测量模型使用一个或多个所选计量模型变量的固定值进行优化。 使用优化的光学测量模型获得一个或多个所选轮廓模型参数的测量。 然后确定所获得的测量是否满足一个或多个终止标准。

公开(公告)号：US07525673B2

公开(公告)日：2009-04-28

申请号：US11484460

申请日：2006-07-10

申请人： Vi Vuong ,  Junwei Bao

发明人： Vi Vuong ,  Junwei Bao

IPC分类号： G01B11/14 ,  G01B11/24 ,  G01N21/86 ,  G01V8/00 ,  G01R31/26 ,  H01L21/66 ,  G06F17/00 ,  G01B7/00 ,  G01B15/00

CPC分类号： G01B11/24 ,  G03F7/70625

摘要： A system for examining a patterned structure formed on a semiconductor wafer using an optical metrology model includes a first fabrication cluster, a metrology cluster, an optical metrology model optimizer, and a real time profile estimator. The first fabrication cluster processes a wafer, the wafer having a first patterned and a first unpatterned structure. The metrology cluster measures diffraction signals off the first patterned and first unpatterned structure. The metrology model optimizer optimizes an optical metrology model of the first patterned structure. The real time profile estimator creates an output comprising underlying film thickness, critical dimension, and profile of the first patterned structure.

摘要翻译： 使用光学测量模型检查在半导体晶片上形成的图案化结构的系统包括第一制造集群，度量集群，光学计量模型优化器和实时分布估计器。 第一制造集群处理晶片，晶片具有第一图案化和第一未图案化结构。 测量簇测量第一图案化和第一无图案结构的衍射信号。 计量模型优化器优化了第一图案结构的光学测量模型。 实时轮廓估计器产生包括第一图案化结构的基底膜厚度，临界尺寸和轮廓的输出。