利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

45 条记录 (耗时 0.035 秒)

    Variable attenuator having stacked transistors
    1.
    发明授权
    Variable attenuator having stacked transistors 有权
    具有堆叠晶体管的可变衰减器

    公开(公告)号：US08334718B2

    公开(公告)日：2012-12-18

    申请号：US12977958

    申请日：2010-12-23

    申请人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    发明人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    IPC分类号： H03H11/02

    CPC分类号： H03L5/00 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49112 ,  H01L2224/49113 ,  H01L2924/181 ,  H03H11/245 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： In one embodiment, a variable attenuator is disclosed having an attenuation circuit and a control circuit. The attenuation circuit may include a first series connected attenuation circuit segment and a shunt connected attenuation circuit segment, as well as additional attenuation circuit segments. Each attenuation circuit segment includes a stack of transistors that are coupled to provide the attenuation circuit segment with a variable impedance level having a continuous impedance range. In this manner, the control circuit may be operably associated with the stack of transistors in each attenuation circuit segment to control the variable attenuation level of the variable attenuator.

    摘要翻译： 在一个实施例中，公开了一种具有衰减电路和控制电路的可变衰减器。 衰减电路可以包括第一串联连接的衰减电路段和分路连接的衰减电路段，以及附加的衰减电路段。 每个衰减电路段包括一堆晶体管，其被耦合以向衰减电路段提供具有连续阻抗范围的可变阻抗电平。 以这种方式，控制电路可以可操作地与每个衰减电路段中的晶体管堆叠相关联，以控制可变衰减器的可变衰减电平。

    Temperature controlled attenuator
    3.
    发明授权
    Temperature controlled attenuator 有权
    温度控制衰减器

    公开(公告)号：US08386986B2

    公开(公告)日：2013-02-26

    申请号：US12978179

    申请日：2010-12-23

    申请人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    发明人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    IPC分类号： G06F17/50

    CPC分类号： H03L5/00 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49112 ,  H01L2224/49113 ,  H01L2924/181 ,  H03H11/245 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： In one embodiment, a temperature controlled attenuator is disclosed having an attenuation circuit and a control circuit. The attenuation circuit includes a series connected attenuation circuit segment and a shunt connected attenuation circuit segment, as well as additional attenuation circuit segments. Each attenuation circuit segment includes a stack of transistors that are coupled to provide the attenuation circuit segment with a variable impedance level having a continuous impedance range. Furthermore, the temperature controlled attenuator includes a temperature controlled circuit that adjusts an attenuation level of the attenuation circuit in accordance to an operating temperature. In this manner, the attenuation level of the temperature controlled attenuator is temperature dependent.

    摘要翻译： 在一个实施例中，公开了具有衰减电路和控制电路的温度控制衰减器。 衰减电路包括串联的衰减电路段和分流连接的衰减电路段，以及附加的衰减电路段。 每个衰减电路段包括一堆晶体管，其被耦合以向衰减电路段提供具有连续阻抗范围的可变阻抗电平。 此外，温度控制衰减器包括温度控制电路，其根据工作温度调节衰减电路的衰减电平。 以这种方式，温度控制的衰减器的衰减水平是温度依赖性的。

    TEMPERATURE CONTROLLED ATTENUATOR
    4.
    发明申请
    TEMPERATURE CONTROLLED ATTENUATOR 有权
    温度控制衰减器

    公开(公告)号：US20110148503A1

    公开(公告)日：2011-06-23

    申请号：US12978179

    申请日：2010-12-23

    申请人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    发明人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    IPC分类号： H03L5/00 ,  H01P1/22

    CPC分类号： H03L5/00 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49112 ,  H01L2224/49113 ,  H01L2924/181 ,  H03H11/245 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： In one embodiment, a temperature controlled attenuator is disclosed having an attenuation circuit and a control circuit. The attenuation circuit may include a first series connected attenuation circuit segment and a shunt connected attenuation circuit segment, as well as additional attenuation circuit segments. Each attenuation circuit segment includes a stack of transistors that are coupled to provide the attenuation circuit segment with a variable impedance level having a continuous impedance range. Furthermore, the temperature controlled attenuator includes a temperature controlled circuit that adjusts the attenuation level of the attenuation circuit in accordance to an operating temperature. In this manner, the attenuation level of the temperature controlled attenuator is temperature dependent.

    摘要翻译： 在一个实施例中，公开了具有衰减电路和控制电路的温度控制衰减器。 衰减电路可以包括第一串联连接的衰减电路段和分路连接的衰减电路段，以及附加的衰减电路段。 每个衰减电路段包括一堆晶体管，其被耦合以向衰减电路段提供具有连续阻抗范围的可变阻抗电平。 此外，温度控制衰减器包括温度控制电路，其根据工作温度调节衰减电路的衰减电平。 以这种方式，温度控制的衰减器的衰减水平是温度依赖性的。

    Variable attenuator having stacked transistors
    5.
    发明授权
    Variable attenuator having stacked transistors 有权
    具有堆叠晶体管的可变衰减器

    公开(公告)号：US08633754B2

    公开(公告)日：2014-01-21

    申请号：US13549018

    申请日：2012-07-13

    申请人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    发明人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    IPC分类号： H03L5/00

    CPC分类号： H03L5/00 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49112 ,  H01L2224/49113 ,  H01L2924/181 ,  H03H11/245 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： In one embodiment, a variable attenuator is disclosed having an attenuation circuit and a control circuit. The attenuation circuit may include a first series connected attenuation circuit segment and a shunt connected attenuation circuit segment, as well as additional attenuation circuit segments. Each attenuation circuit segment includes a stack of transistors that are coupled to provide the attenuation circuit segment with a variable impedance level having a continuous impedance range. In this manner, the control circuit may be operably associated with the stack of transistors in each attenuation circuit segment to control the variable attenuation level of the variable attenuator.

    摘要翻译： 在一个实施例中，公开了一种具有衰减电路和控制电路的可变衰减器。 衰减电路可以包括第一串联连接的衰减电路段和分路连接的衰减电路段，以及附加的衰减电路段。 每个衰减电路段包括一堆晶体管，其被耦合以向衰减电路段提供具有连续阻抗范围的可变阻抗电平。 以这种方式，控制电路可以可操作地与每个衰减电路段中的晶体管堆叠相关联，以控制可变衰减器的可变衰减电平。

    VARIABLE ATTENUATOR HAVING STACKED TRANSISTORS
    6.
    发明申请
    VARIABLE ATTENUATOR HAVING STACKED TRANSISTORS 有权
    具有堆叠晶体管的可变衰减器

    公开(公告)号：US20120280738A1

    公开(公告)日：2012-11-08

    申请号：US13549018

    申请日：2012-07-13

    申请人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    发明人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    IPC分类号： H03L5/00 ,  H01L21/58

    CPC分类号： H03L5/00 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49112 ,  H01L2224/49113 ,  H01L2924/181 ,  H03H11/245 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： In one embodiment, a variable attenuator is disclosed having an attenuation circuit and a control circuit. The attenuation circuit may include a first series connected attenuation circuit segment and a shunt connected attenuation circuit segment, as well as additional attenuation circuit segments. Each attenuation circuit segment includes a stack of transistors that are coupled to provide the attenuation circuit segment with a variable impedance level having a continuous impedance range. In this manner, the control circuit may be operably associated with the stack of transistors in each attenuation circuit segment to control the variable attenuation level of the variable attenuator.

    摘要翻译： 在一个实施例中，公开了一种具有衰减电路和控制电路的可变衰减器。 衰减电路可以包括第一串联连接的衰减电路段和分路连接的衰减电路段，以及附加的衰减电路段。 每个衰减电路段包括一堆晶体管，其被耦合以向衰减电路段提供具有连续阻抗范围的可变阻抗电平。 以这种方式，控制电路可以可操作地与每个衰减电路段中的晶体管堆叠相关联，以控制可变衰减器的可变衰减电平。

    TEMPERATURE COMPENSATION ATTENUATOR
    7.
    发明申请
    TEMPERATURE COMPENSATION ATTENUATOR 有权
    温度补偿衰减器

    公开(公告)号：US20110148502A1

    公开(公告)日：2011-06-23

    申请号：US12978149

    申请日：2010-12-23

    申请人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    发明人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    IPC分类号： H03L5/00

    CPC分类号： H03L5/00 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49112 ,  H01L2224/49113 ,  H01L2924/181 ,  H03H11/245 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： In one embodiment, a temperature compensating attenuator is disclosed having an attenuation circuit and a control circuit. The temperature compensating attenuator circuit may include a first series connected attenuation circuit segment and a shunt connected attenuation circuit segment, as well as additional attenuation circuit segments. Each attenuation circuit segment includes a stack of transistors that are coupled to provide the attenuation circuit segment with an impedance attenuation level having a continuous impedance range. The control circuit may be operably associated with the stack of transistors in each attenuation circuit segment to control the attenuation level of the attenuation circuit. The temperature compensating attenuator includes a temperature compensating circuit that compensates for variations in operation of the attenuation circuit due to a temperature change.

    摘要翻译： 在一个实施例中，公开了具有衰减电路和控制电路的温度补偿衰减器。 温度补偿衰减器电路可以包括第一串联连接的衰减电路段和分流连接的衰减电路段，以及附加的衰减电路段。 每个衰减电路段包括一堆晶体管，其被耦合以向衰减电路段提供具有连续阻抗范围的阻抗衰减电平。 控制电路可以可操作地与每个衰减电路段中的晶体管堆叠相关联，以控制衰减电路的衰减电平。 温度补偿衰减器包括温度补偿电路，其补偿由于温度变化引起的衰减电路的工作变化。

    VARIABLE ATTENUATOR HAVING STACKED TRANSISTORS
    8.
    发明申请
    VARIABLE ATTENUATOR HAVING STACKED TRANSISTORS 有权
    具有堆叠晶体管的可变衰减器

    公开(公告)号：US20110148501A1

    公开(公告)日：2011-06-23

    申请号：US12977958

    申请日：2010-12-23

    申请人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    发明人： Marcus Granger-Jones ,  Brad Nelson ,  Ed Franzwa

    IPC分类号： H03H11/02

    CPC分类号： H03L5/00 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49112 ,  H01L2224/49113 ,  H01L2924/181 ,  H03H11/245 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： In one embodiment, a variable attenuator is disclosed having an attenuation circuit and a control circuit. The attenuation circuit may include a first series connected attenuation circuit segment and a shunt connected attenuation circuit segment, as well as additional attenuation circuit segments. Each attenuation circuit segment includes a stack of transistors that are coupled to provide the attenuation circuit segment with a variable impedance level having a continuous impedance range. In this manner, the control circuit may be operably associated with the stack of transistors in each attenuation circuit segment to control the variable attenuation level of the variable attenuator.

    摘要翻译： 在一个实施例中，公开了一种具有衰减电路和控制电路的可变衰减器。 衰减电路可以包括第一串联连接的衰减电路段和分路连接的衰减电路段，以及附加的衰减电路段。 每个衰减电路段包括一堆晶体管，其被耦合以向衰减电路段提供具有连续阻抗范围的可变阻抗电平。 以这种方式，控制电路可以可操作地与每个衰减电路段中的晶体管堆叠相关联，以控制可变衰减器的可变衰减电平。

    High power FET switch
    9.
    发明授权
    High power FET switch 有权

    公开(公告)号：US09628068B2

    公开(公告)日：2017-04-18

    申请号：US13095302

    申请日：2011-04-27

    申请人： Marcus Granger-Jones ,  Christian Rye Iversen

    发明人： Marcus Granger-Jones ,  Christian Rye Iversen

    IPC分类号： H03K17/10

    摘要： Described are embodiments of stacked field effect transistor (FET) switch having a plurality of FET devices coupled in series to form an FET device stack. To prevent the FET device stack from being turned on during large signal conditions, one or more decoupling paths are provided and are configured to pass the time-variant input signal during the open state of the FET device stack. The first decoupling path may include a capacitor, a transistor, or the like, that passes the time-variant input signal by, for example, presenting a low impedance to the time-variant input signal during the open state. The decoupling paths may be connected so that the time-variant input signal bypasses a portion of the FET device stack during the open state.

    Amplification device having compensation for a local thermal memory effect
    10.
    发明授权
    Amplification device having compensation for a local thermal memory effect 有权
    具有补偿局部热记忆效应的放大装置

    公开(公告)号：US09231528B2

    公开(公告)日：2016-01-05

    申请号：US13049215

    申请日：2011-03-16

    申请人： Marcus Granger-Jones ,  Wayne Kennan

    发明人： Marcus Granger-Jones ,  Wayne Kennan

    IPC分类号： H03F3/04 ,  H03F1/30

    CPC分类号： H03F1/302

    摘要： In one embodiment, an amplification device has a temperature differential sensing circuit that reduces a local thermal memory effect. The amplification device may include an amplification circuit and biasing circuitry. The amplification device is operable to receive an input signal and generate and amplified output signal. The biasing circuitry generates a biasing signal that sets the quiescent operating level of the amplified output signal. The temperature differential sensing circuit provides a bias level adjustment signal that adjusts the biasing signal to maintain the quiescent operating level of the amplified output signal at a desired level.

    摘要翻译： 在一个实施例中，放大装置具有降低局部热记忆效应的温差传感电路。 放大装置可以包括放大电路和偏置电路。 放大装置可操作以接收输入信号并产生和放大的输出信号。 偏置电路产生设置放大的输出信号的静态工作电平的偏置信号。 温度差动检测电路提供偏置电平调整信号，该信号调节偏置信号，以将放大的输出信号的静态工作电平维持在所需的电平。