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1.发明授权公开(公告)号：US07173260B2
公开(公告)日：2007-02-06
申请号：US11022060
申请日：2004-12-22
CPC分类号： H01J37/3171 , H01J37/165 , H01J2237/0213 , H01J2237/022 , H01J2237/31705
摘要： An ion implanter having a source, a workpiece support and a transport system for delivering ions from the source to an ion implantation chamber that contains the workpiece support. The implanter includes one or more removable inserts mounted to an interior of either the transport system or the ion implantation chamber for collecting material entering either the transport system or the ion implantation chamber due to collisions between ions and the workpiece within the ion implantation chamber during ion processing of the workpiece. A temperature control coupled to the one or more removable inserts for maintaining the temperature of the insert at a controlled temperature to promote formation of a film on said insert during ion treatment due to collisions between ions and said workpiece.
摘要翻译： 一种离子注入机，其具有源，工件支撑和用于将离子从源输送到包含工件支撑件的离子注入室的输送系统。 注入机包括一个或多个可拆卸的插入件，其安装到输送系统或离子注入室的内部，用于收集进入输送系统或离子注入室的材料，这是由于离子和离子注入室内的工件之间的离子在离子 加工工件。 耦合到一个或多个可移除插入件的温度控制器，用于将插入件的温度保持在受控温度，以促进在离子处理期间由于离子和所述工件之间的碰撞而在所述插入件上形成膜。
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公开(公告)号：US08338806B2
公开(公告)日：2012-12-25
申请号：US12774051
申请日：2010-05-05
IPC分类号： A61N5/00
CPC分类号： H01J37/08 , H01J27/026 , H01J37/3171 , H01J2237/006 , H01J2237/0812
摘要： A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.
摘要翻译： 提供了用气体簇离子束（GCIB）照射衬底的处理系统。 该系统包括用于通过喷嘴出口形成和发射气体束的喷嘴，以及位于喷嘴的上游和邻近喷嘴的停滞室。 停滞室具有入口，并且喷嘴构造成将单个气体束束引向基板。 离子发生器位于出口的下游，并被配置为电离气体簇束以形成GCIB。 该系统还包括与停滞室的入口流体连通的气体源，其包括气体源和位于气体源和喷嘴之间的阀，用于控制气体源和喷嘴之间的气体流动 。
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公开(公告)号：US20110272594A1
公开(公告)日：2011-11-10
申请号：US12774051
申请日：2010-05-05
CPC分类号： H01J37/08 , H01J27/026 , H01J37/3171 , H01J2237/006 , H01J2237/0812
摘要： A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.
摘要翻译： 提供了用气体簇离子束（GCIB）照射衬底的处理系统。 该系统包括用于通过喷嘴出口形成和发射气体束的喷嘴，以及位于喷嘴的上游和邻近喷嘴的停滞室。 停滞室具有入口，并且喷嘴构造成将单个气体束束引向基板。 离子发生器位于出口的下游，并被配置为电离气体簇束以形成GCIB。 该系统还包括与停滞室的入口流体连通的气体源，其包括气体源和位于气体源和喷嘴之间的阀，用于控制气体源和喷嘴之间的气体流动 。
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