Abstract:
A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.
Abstract:
Embodiments of methods for improving a copper/dielectric interface in semiconductor devices are generally described herein. Other embodiments may be described and claimed.
Abstract:
An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B10Hx+, B18Hx+, P4+ or As4+′ or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomer implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.
Abstract:
An ionizer for forming a gas-cluster ion beam is disclosed including inlet and outlet ends partially defining an ionization region traversed by a gas-cluster jet and one or more plasma electron source(s) for providing electrons to the ionizing region for ionizing at least a portion of the gas-clusters to form a gas-cluster ion beam. One or more sets of substantially linear rod electrodes may be disposed substantially parallel to and in one or more corresponding partial, substantially cylindrical pattern(s) about the gas-cluster jet axis, wherein some sets are arranged in substantially concentric patterns with differing radii. In certain embodiments, the ionizer includes one or more substantially linear thermionic filaments disposed substantially parallel to the gas-cluster jet axis, heating means, electrical biasing means to judiciously bias sets of the linear rod electrodes with respect to the thermionic filaments to achieve electron repulsion.
Abstract:
An ionizer for forming a gas-cluster ion beam is disclosed including inlet and outlet ends partially defining an ionization region traversed by a gas-cluster jet and one or more plasma electron source(s) for providing electrons to the ionizing region for ionizing at least a portion of the gas-clusters to form a gas-cluster ion beam. One or more sets of substantially linear rod electrodes may be disposed substantially parallel to and in one or more corresponding partial, substantially cylindrical pattern(s) about the gas-cluster jet axis, wherein some sets are arranged in substantially concentric patterns with differing radii. In certain embodiments, the ionizer includes one or more substantially linear thermionic filaments disposed substantially parallel to the gas-cluster jet axis, heating means, electrical biasing means to judiciously bias sets of the linear rod electrodes with respect to the thermionic filaments to achieve electron repulsion.
Abstract:
A detector apparatus and its use for cluster ion beam diagnostics are described. The detector has a Faraday cup with a conductance path to a gas pressure detector and a conductance to the detector exit. The detector acquires ion current, which is a measure of the ion beam flux, and also acquires mass flux, through a pressure measurement. The pressure measurement responds to the mass of dissociated gas clusters and is combined with information about instantaneous ion current to estimate mean gas cluster ion size ({overscore (N)}i).
Abstract:
Incorporating the use of a permanent magnet within a GCIB apparatus to separate undesirable monomer ions from a gas cluster ion beam to facilitate improved processing of workpieces. In an alternate embodiment, the effect of the permanent magnet may be controlled by the use of an electrical coil. The above system eliminates problems related to power consumption and heat generation.
Abstract:
In the known liquid droplet injecting apparatus, when a tube and a nozzle are heated in order to prevent deposition of a solid source material of liquid droplets, the efficiency of injection of liquid droplets into a vacuum vessel is decreased by evaporation of the liquid droplets. The present invention provides a liquid droplet injecting apparatus capable of efficiently injecting liquid droplets into a vacuum vessel. The liquid droplet injecting apparatus includes a liquid container which holds a liquid and whose inside pressure can be adjusted, a liquid droplet generating unit configured to generate liquid droplets from the liquid held in the liquid container, a nozzle which injects the liquid droplets generated in the liquid container, a connecting tube which connects the nozzle and the liquid container, and a first heating unit configured to heat at least one of the connecting tube and the nozzle.
Abstract:
A scratch or similar surface roughness in a solid surface is reduced by gas cluster ion beam irradiation. A gas-cluster-ion-beam solid surface smoothing method includes an irradiation step in which the solid surface is irradiated with a gas cluster ion beam. The irradiation step includes a process of causing clusters from a plurality of directions to collide with at least an area (spot) irradiated with the gas cluster ion beam in the solid surface. Collision of clusters from a plurality of directions with the spot can be brought about by emitting a divergent gas cluster ion beam which releases clusters in diverging directions with respect to the beam center, for example.
Abstract:
A method of processing one or more surfaces is provided, comprising: providing a switchable ion gun which is switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters for irradiating a surface and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms for irradiating a surface; and selectively operating the ion gun in the cluster mode by mass selecting ionised gas clusters using a variable mass selector thereby irradiating a surface substantially with ionised gas clusters or the atomic mode by mass selecting ionised gas atoms using a variable mass selector thereby irradiating a surface substantially with ionised gas atoms. Also provided is a switchable ion gun comprising: a gas expansion nozzle for producing gas clusters; an ionisation chamber for ionising the gas clusters and gas atoms; and a variable (preferably a magnetic sector) mass selector for mass selecting the ionised gas clusters and ionised gas atoms to produce an ion beam variable between substantially comprising ionised gas clusters and substantially comprising ionised gas atoms. Preferably, the gun comprises an electrically floating flight tube for adjusting the energy of the ions whilst within the mass selector.