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    Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof
    1.
    发明授权
    Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof 有权
    使用调谐聚合物膜作为底层的多层抗蚀剂系统及其制造方法

    公开(公告)号：US07361444B1

    公开(公告)日：2008-04-22

    申请号：US09256034

    申请日：1999-02-23

    申请人： Marie Angelopoulos ,  Katherina E. Babich ,  Douglas Charles LaTulipe ,  Qinghuang Lin ,  David R. Medeiros ,  Wayne Martin Moreau ,  Karen E. Petrillo ,  John P. Simons

    发明人： Marie Angelopoulos ,  Katherina E. Babich ,  Douglas Charles LaTulipe ,  Qinghuang Lin ,  David R. Medeiros ,  Wayne Martin Moreau ,  Karen E. Petrillo ,  John P. Simons

    IPC分类号： G03F7/023

    CPC分类号： G03F7/091 ,  Y10S430/145

    摘要： Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials. These underlayer films include the group consisting of novolac based resists whose processing conditions are controlled, polyarylsulfones such as the BARL material, polyhydroxystyrene based derivatives, an example being a copolymer of polyhydroxystyrene and polyhydroxystyrene reacted with anthracenemethanol that contains a cross-linker, and acid catalyst (thermal acid generator), polyimides, polyethers in particular polyarylene ethers, polyarylenesulfides, polycarbonates such as polyarylenecarbonates, epoxies, epoxyacrylates, polyarylenes such as polyphenylenes, polyarylenevinylenes such as polyphenylenevinylenes, polyvinylcarbazole, cyclicolefins, and polyesters. Such films have index of refraction and extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6 at UV and DUV wavelengths, in particular 365, 248, 193 and 157 nm and EUV. Moreover, underlayer films produced in the present invention do not interact with the resist limiting interfacial mixing and contamination of resist by an outgassing product. The bilayer and TSI resist structures can be used for 248, 193, 157, EUV, x-ray, e-beam, and ion beam technology.

    摘要翻译： 公开了包括双层和顶面成像的多层抗蚀剂结构，其利用用作ARC的调谐底层，平坦化层和耐蚀刻硬掩模，其特性如光学，化学和物理性质被定制以产生呈现高分辨率的多层抗蚀剂结构 自由光刻及其制备方法。 这些下层膜包括其加工条件被控制的基于酚醛清漆的抗蚀剂的组，诸如BARL材料的聚芳基砜，聚羟基苯乙烯基衍生物，作为与含有交联剂的蒽甲醇反应的聚羟基苯乙烯和聚羟基苯乙烯的共聚物的实例，以及酸催化剂 （热酸生成剂），聚酰亚胺，聚醚，特别是聚亚芳基醚，聚芳基硫醚，聚碳酸酯如聚芳基碳酸酯，环氧化物，环氧丙烯酸酯，聚亚芳基如聚苯撑，聚亚芳基亚乙烯基如聚亚苯基亚乙烯基，聚乙烯基咔唑，环烯烃和聚酯。 这种膜的折射率和消光系数在UV和DUV波长，特别是365,248,293和157nm以及EUV下可调节为约1.4至约2.1和约0.1至约0.6。 此外，在本发明中制备的底层膜不与抗蚀剂界面混合和除气产物对抗蚀剂的污染相互作用。 双层和TSI抗蚀剂结构可用于248,193,157，EUV，X射线，电子束和离子束技术。