公开(公告)号：US20090027535A1

公开(公告)日：2009-01-29

申请号：US12176871

申请日：2008-07-21

申请人： Mariko SAITO ,  Hideki Wako ,  Katsumi Ikeda

发明人： Mariko SAITO ,  Hideki Wako ,  Katsumi Ikeda

IPC分类号： H04N5/335

CPC分类号： H04N5/3765 ,  H04N5/3698 ,  H04N5/3728

摘要： A solid state imaging element comprises: photoelectric conversion elements; a plurality of vertical electric charge transfer passages that transfer, in a vertical direction, electric charges generated by the photoelectric conversion elements; and a horizontal electric charge transfer passage that transfers, in a horizontal direction perpendicular to the vertical direction, the electric charges transferred in the vertical electric charge transfer passage, wherein the horizontal electric charge transfer passage comprises a plurality of electric charge transferring stages each of which operates as an electric charge accumulating region or a barrier region according to a level of an applied voltage, and each of said plurality of electric charge transferring stages is connected to plural ones of the vertical electric charge transfer passages.

摘要翻译： 固态成像元件包括：光电转换元件; 多个垂直电荷转移通道，其在垂直方向上转移由所述光电转换元件产生的电荷; 以及水平电荷传递通道，其在与垂直方向垂直的水平方向上传送在垂直电荷转移通道中传送的电荷，其中水平电荷转移通道包括多个电荷转移阶段，每个电荷转移步骤 根据施加电压的电平作为电荷积聚区域或势垒区域进行工作，并且所述多个电荷转移级中的每一个连接到多个垂直电荷转移通道。

公开(公告)号：US20100207224A1

公开(公告)日：2010-08-19

申请号：US12629322

申请日：2009-12-02

申请人： Mariko SAITO ,  Ikuko Inoue

发明人： Mariko SAITO ,  Ikuko Inoue

IPC分类号： H01L31/0232

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L31/02002 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024

摘要： A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.

摘要翻译： 固态成像装置包括成像元件，外部端子，绝缘膜，穿透电极，第一绝缘中间层，第一电极和第一接触插塞。 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在面向基板的第一主表面的第二主表面上。 绝缘膜形成在形成在基板中的通孔中。 穿透电极形成在通孔中的绝缘膜上并电连接到外部端子。 第一绝缘中间层形成在基板的第一主表面和穿透电极上。 第一电极形成在第一绝缘中间层上。 第一接触塞形成在穿透电极和第一电极之间的第一绝缘中间层中，以电连接穿透电极和第一电极。

公开(公告)号：US20110062540A1

公开(公告)日：2011-03-17

申请号：US12845194

申请日：2010-07-28

申请人： Mariko SAITO ,  Ikuko Inoue ,  Takeshi Yoshida

发明人： Mariko SAITO ,  Ikuko Inoue ,  Takeshi Yoshida

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14645

摘要： According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.

摘要翻译： 根据一个实施例，固态图像传感器包括：半导体衬底，包括光入射的第一表面和与第一表面相对的第二表面;形成在半导体衬底中的像素区域，并且包括光电转换元件， 将入射光转换为电信号，形成在半导体衬底中的周边区域，并且包括控制像素区域中的元件的操作的电路;多个互连，其形成在堆叠在多个层间绝缘膜 第二表面，并且连接到电路，以及形成在层叠的层间绝缘膜和互连件上的支撑衬底。 形成在最上层的层间绝缘膜中的最上层的一个互连掩埋在最上层的层间绝缘膜中形成的第一沟槽中。