公开(公告)号：US08039915B2

公开(公告)日：2011-10-18

申请号：US12442884

申请日：2007-09-27

申请人： Kosuke Takasaki ,  Mamoru Iesaka ,  Hideki Wako

发明人： Kosuke Takasaki ,  Mamoru Iesaka ,  Hideki Wako

IPC分类号： H01L31/02

CPC分类号： H01L27/14618 ,  H01L23/60 ,  H01L27/14632 ,  H01L2924/0002 ,  H01L2924/00

摘要： A solid-state image sensor (1) includes: an imaging device wafer (2A); a plurality of imaging devices (3) which are formed on the imaging device wafer (2A); a spacer (5) which surrounds the imaging devices (3) on the imaging device wafer (2A) and is joined to the imaging device wafer (2A) with an adhesive (7); a transparent protection member (4) which covers the imaging devices (3) on the imaging device wafer (2A) and is attached on the spacer (5); and a plurality of electrostatic discharge protection devices (10A) which are formed on the imaging device wafer (2A), the electrostatic discharge protection devices (10A) being positioned under the spacer (5), each of the electrostatic discharge protection devices (10A) having diffusion layers (12, 13) and a well layer (11) between the diffusion layers (12, 13), the well layer (11) being provided with a channel stopper (20).

摘要翻译： 固态图像传感器（1）包括：成像装置晶片（2A）; 多个成像装置（3），形成在成像装置晶片（2A）上; 隔离物（5），其围绕成像装置晶片（2A）上的成像装置（3）并且用粘合剂（7）接合到成像装置晶片（2A）; 覆盖成像装置晶片（2A）上的成像装置（3）并附着在间隔件（5）上的透明保护构件（4）; 以及形成在摄像元件晶片（2A）上的多个静电放电保护器件（10A），静电放电保护器件（10A）位于间隔物（5）的下方，每个静电放电保护器件（10A） 在所述扩散层（12,13）之间具有扩散层（12,13）和阱层（11），所述阱层（11）设置有沟道限制器（20）。

公开(公告)号：US20090027535A1

公开(公告)日：2009-01-29

申请号：US12176871

申请日：2008-07-21

申请人： Mariko SAITO ,  Hideki Wako ,  Katsumi Ikeda

发明人： Mariko SAITO ,  Hideki Wako ,  Katsumi Ikeda

IPC分类号： H04N5/335

CPC分类号： H04N5/3765 ,  H04N5/3698 ,  H04N5/3728

摘要： A solid state imaging element comprises: photoelectric conversion elements; a plurality of vertical electric charge transfer passages that transfer, in a vertical direction, electric charges generated by the photoelectric conversion elements; and a horizontal electric charge transfer passage that transfers, in a horizontal direction perpendicular to the vertical direction, the electric charges transferred in the vertical electric charge transfer passage, wherein the horizontal electric charge transfer passage comprises a plurality of electric charge transferring stages each of which operates as an electric charge accumulating region or a barrier region according to a level of an applied voltage, and each of said plurality of electric charge transferring stages is connected to plural ones of the vertical electric charge transfer passages.

摘要翻译： 固态成像元件包括：光电转换元件; 多个垂直电荷转移通道，其在垂直方向上转移由所述光电转换元件产生的电荷; 以及水平电荷传递通道，其在与垂直方向垂直的水平方向上传送在垂直电荷转移通道中传送的电荷，其中水平电荷转移通道包括多个电荷转移阶段，每个电荷转移步骤 根据施加电压的电平作为电荷积聚区域或势垒区域进行工作，并且所述多个电荷转移级中的每一个连接到多个垂直电荷转移通道。

公开(公告)号：US07202896B2

公开(公告)日：2007-04-10

申请号：US10361624

申请日：2003-02-11

申请人： Hideki Wako ,  Shinji Uya

发明人： Hideki Wako ,  Shinji Uya

IPC分类号： H04N5/335 ,  H04N3/14 ,  H04N9/04

CPC分类号： G01J3/2803 ,  G01J3/0256 ,  G01J3/18 ,  G01J3/2823 ,  G02B5/203 ,  H01L27/14806 ,  H04N5/2254 ,  H04N9/045

摘要： A spectral device is disposed above a semiconductor substrate formed with a number of photoelectric conversion elements. The spectral device has a plurality of spectral regions each corresponding to a plurality of photoelectric conversion elements, each of the spectral regions spectroscopically splitting light fluxes of a plurality of colors necessary for color imaging and contained in incidence light toward different directions, each of the spectroscopically split light fluxes becoming incident upon an associated photoelectric conversion element among the plurality of photoelectric conversion elements corresponding to each of the spectral regions.

摘要翻译： 光谱器件设置在形成有多个光电转换元件的半导体衬底之上。 光谱装置具有多个光谱区域，每个光谱区域分别对应于多个光电转换元件，每个光谱区域对于彩色成像所需的多种颜色的光束进行光谱分裂，并且包含在不同方向的入射光中， 在与每个光谱区域对应的多个光电转换元件中入射到相关联的光电转换元件上的分离光通量。

公开(公告)号：US07050101B2

公开(公告)日：2006-05-23

申请号：US09983119

申请日：2001-10-23

申请人： Hideki Wako ,  Katsumi Ikeda ,  Tetsuo Yamada

发明人： Hideki Wako ,  Katsumi Ikeda ,  Tetsuo Yamada

IPC分类号： H04N5/335 ,  H01L27/148 ,  H01L21/00

CPC分类号： H01L29/76816 ,  H01L27/14812 ,  H01L27/14831

摘要： A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.

摘要翻译： 沿着构成水平电荷转移元件的水平电荷转移通道形成漏极区，并且在水平电荷转移通道和漏极区之间形成用于电荷的势垒区。 通过使用水平电荷转移通道，阻挡区域和漏极区域形成双电极元件。 可以以高生产率制造固态图像拾取装置，该装置可以高速地在水平电荷转移元件中排出电荷。

公开(公告)号：US20060077274A1

公开(公告)日：2006-04-13

申请号：US11287280

申请日：2005-11-28

申请人： Hideki Wako ,  Katsumi Ikeda ,  Tetsuo Yamada

发明人： Hideki Wako ,  Katsumi Ikeda ,  Tetsuo Yamada

IPC分类号： H04N5/335

CPC分类号： H01L29/76816 ,  H01L27/14812 ,  H01L27/14831

摘要： A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.

公开(公告)号：US20100032784A1

公开(公告)日：2010-02-11

申请号：US12442884

申请日：2007-09-27

申请人： Kosuke Takasaki ,  Mamoru Iesaka ,  Hideki Wako

发明人： Kosuke Takasaki ,  Mamoru Iesaka ,  Hideki Wako

IPC分类号： H01L31/02

CPC分类号： H01L27/14618 ,  H01L23/60 ,  H01L27/14632 ,  H01L2924/0002 ,  H01L2924/00

摘要： A solid-state image sensor (1) includes: an imaging device wafer (2A); a plurality of imaging devices (3) which are formed on the imaging device wafer (2A); a spacer (5) which surrounds the imaging devices (3) on the imaging device wafer (2A) and is joined to the imaging device wafer (2A) with an adhesive (7); a transparent protection member (4) which covers the imaging devices (3) on the imaging device wafer (2A) and is attached on the spacer (5); and a plurality of electrostatic discharge protection devices (10A) which are formed on the imaging device wafer (2A), the electrostatic discharge protection devices (10A) being positioned under the spacer (5), each of the electrostatic discharge protection devices (10A) having diffusion layers (12, 13) and a well layer (11) between the diffusion layers (12, 13), the well layer (11) being provided with a channel stopper (20).

摘要翻译： 固态图像传感器（1）包括：成像装置晶片（2A）; 多个成像装置（3），形成在成像装置晶片（2A）上; 隔离物（5），其围绕成像装置晶片（2A）上的成像装置（3）并且用粘合剂（7）接合到成像装置晶片（2A）; 覆盖成像装置晶片（2A）上的成像装置（3）并附着在间隔件（5）上的透明保护构件（4）; 以及形成在摄像元件晶片（2A）上的多个静电放电保护器件（10A），静电放电保护器件（10A）位于间隔物（5）的下方，每个静电放电保护器件（10A） 在所述扩散层（12,13）之间具有扩散层（12,13）和阱层（11），所述阱层（11）设置有沟道限制器（20）。

公开(公告)号：US07271836B2

公开(公告)日：2007-09-18

申请号：US11287280

申请日：2005-11-28

申请人： Hideki Wako ,  Katsumi Ikeda ,  Tetsuo Yamada

发明人： Hideki Wako ,  Katsumi Ikeda ,  Tetsuo Yamada

IPC分类号： H04N5/335 ,  H01L27/148 ,  H01L21/00

CPC分类号： H01L29/76816 ,  H01L27/14812 ,  H01L27/14831

摘要： A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.

摘要翻译： 沿着构成水平电荷转移元件的水平电荷转移通道形成漏极区，并且在水平电荷转移通道和漏极区之间形成用于电荷的势垒区。 通过使用水平电荷转移通道，阻挡区域和漏极区域形成双电极元件。 可以以高生产率制造固态图像拾取装置，该装置可以高速地在水平电荷转移元件中排出电荷。

公开(公告)号：US20060038905A1

公开(公告)日：2006-02-23

申请号：US11208731

申请日：2005-08-23

申请人： Hideki Wako ,  Katsumi Ikeda

发明人： Hideki Wako ,  Katsumi Ikeda

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H04N5/3728 ,  H04N9/083

摘要： A solid-state imaging apparatus, comprising: a semiconductor substrate defining a two-dimensional surface; a multiplicity of photo electric conversion elements arranged in a plurality of rows and in a plurality of lines in a light receiving region of the semiconductor substrate and each accumulating signal electric charges; a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels arranged vertically between rows of the photo electric conversion elements and a plurality of transfer electrodes horizontally arranged over the vertical electric charge transfer channels, wherein the vertical electric charge transfer device transfers the signal electrical charges accumulated by the photo eclectic conversion elements by setting a transfer line transferring vacant signals on an up stream side in a vertical direction of every transfer line transferring the signal electrical charges; reading out parts, each corresponding to each one of the multiplicity of the photo electric conversion elements and reading out the signal electric charges accumulated in the corresponding photo electric conversion element to the vertical electric charge transfer channels adjoining in a horizontal direction; and a horizontal electric charge transfer device that horizontally transfers the signal electric charges transferred by the vertical electric charge transfer device.

摘要翻译： 一种固态成像装置，包括：限定二维表面的半导体衬底; 多个光电转换元件，其布置在半导体衬底的光接收区域中的多行和多行中，并且每个累积信号电荷; 垂直电荷转移装置，其具有垂直设置在所述光电转换元件的行之间的多个垂直电荷转移通道和在所述垂直电荷转移通道上水平布置的多个转移电极，其中所述垂直电荷转移装置将 通过设置在传送信号电荷的每个传送线的垂直方向上的上游侧传送空闲信号的传送线来传送由光折射转换元件累积的信号电荷; 读取部分，每个对应于多个光电转换元件中的每一个，并将累积在相应的光电转换元件中的信号电荷读出到与水平方向相邻的垂直电荷传输通道; 以及水平电荷转移装置，其水平传送由垂直电荷转移装置传送的信号电荷。

公开(公告)号：US07965331B2

公开(公告)日：2011-06-21

申请号：US12176871

申请日：2008-07-21

申请人： Mariko Saito ,  Hideki Wako ,  Katsumi Ikeda

发明人： Mariko Saito ,  Hideki Wako ,  Katsumi Ikeda

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/3765 ,  H04N5/3698 ,  H04N5/3728

摘要： A solid state imaging element comprises: photoelectric conversion elements; a plurality of vertical electric charge transfer passages that transfer, in a vertical direction, electric charges generated by the photoelectric conversion elements; and a horizontal electric charge transfer passage that transfers, in a horizontal direction perpendicular to the vertical direction, the electric charges transferred in the vertical electric charge transfer passage, wherein the horizontal electric charge transfer passage comprises a plurality of electric charge transferring stages each of which operates as an electric charge accumulating region or a barrier region according to a level of an applied voltage, and each of said plurality of electric charge transferring stages is connected to plural ones of the vertical electric charge transfer passages.

摘要翻译： 固态成像元件包括：光电转换元件; 多个垂直电荷转移通道，其在垂直方向上转移由所述光电转换元件产生的电荷; 以及水平电荷传递通道，其在与垂直方向垂直的水平方向上传送在垂直电荷转移通道中传送的电荷，其中水平电荷转移通道包括多个电荷转移阶段，每个电荷转移步骤 根据施加电压的电平作为电荷积聚区域或势垒区域进行工作，并且所述多个电荷转移级中的每一个连接到多个垂直电荷转移通道。

公开(公告)号：US20100060757A1

公开(公告)日：2010-03-11

申请号：US12518556

申请日：2007-12-10

申请人： Kosuke Takasaki ,  Mamoru Iesaka ,  Hideki Wako

发明人： Kosuke Takasaki ,  Mamoru Iesaka ,  Hideki Wako

IPC分类号： H04N5/335

CPC分类号： H01L27/14618 ,  H01L2924/0002 ,  H04N5/2253 ,  H01L2924/00

摘要： A solid-state image pickup device (1) comprises: an image sensor wafer (2A) including image sensors (3); an optically-transparent protection member (4) connected by use of an adhesive agent (7) via a spacer (5) arranged to surround the image sensors (3); and an electrostatic (ESD) protection circuit (10) disposed on the image sensor wafer (2A) so as to avoid a position corresponding to a connected surface where the spacer (5) and the image sensor wafer (2A) are connected. Accordingly, in this configuration, even when polarization occurs in the adhesive agent, since the p-well layer between diffusion layers of the ESD protection circuit is not disposed immediately below the connected surface, the p-well layer is not inverted by electric charges in the element interface and thus parasitic MOS transistor does not turn on, allowing suppression of leak current.

摘要翻译： 固态图像拾取装置（1）包括：包括图像传感器（3）的图像传感器晶片（2A）; 通过布置成围绕图像传感器（3）的隔离物（5）通过使用粘合剂（7）连接的光学透明保护构件（4）; 以及设置在图像传感器晶片（2A）上的静电（ESD）保护电路（10），以避免与间隔物（5）和图像传感器晶片（2A）连接的连接表面相对应的位置。 因此，在该结构中，即使在粘合剂发生极化的情况下，由于ESD保护电路的扩散层之间的p阱层不直接设置在连接面的正下方，因此p阱层不会被电荷反转 因此，元件接口和寄生MOS晶体管不导通，从而抑制漏电流。